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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLSL3036PBF

Name: IRLSL3036PBF
Brand: Infineon Technologies
SKU: IRLSL3036PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLSL3036PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRLSL3036PBF.pdf

Description:: MOSFET N-CH 60V 195A TO262

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRLSL3036PBF from Infineon Technologies is a logic-level N-channel HEXFET® Power MOSFET in D²PAK (TO-262) package, designed for high-current, low-voltage switching in hard-switched and high-frequency power stages. It delivers 195A continuous drain current (package-limited), 2.4mΩ max R_DS(on) at V_GS = 4.5V, 60V V_DSS, and optimized gate charge (Q_g = 91nC typ.) for synchronous rectification in server VRMs and telecom SMPS.

For engineers reviewing the IRLSL3036PBF datasheet, IRLSL3036PBF pinout, IRLSL3036PBF application, or IRLSL3036PBF equivalent, key selection criteria include its 4.5V logic-level drive compatibility, ultra-low conduction loss at high current, body diode dV/dt ruggedness (≥430A/µs), and validated avalanche energy rating (1100mJ single-pulse).

Technical Context

This MOSFET employs planar silicon process with enhanced body diode dI/dt capability and fully characterized SOA for unclamped inductive switching. Its gate threshold voltage (1.0–2.5V) ensures reliable turn-on with standard logic drivers, while C_{oss eff.(TR)} = 1880pF enables predictable hard-switching timing in 100–500kHz DC-DC converters.

The device integrates an intrinsic reverse p-n junction diode with t_rr = 62ns (T_J = 25°C) and Q_rr = 310nC, supporting high-efficiency synchronous rectification without external Schottky replacement. Thermal resistance R_θJC = 0.40°C/W enables high-power density mounting on copper-clad PCBs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60V - Maximum blocking voltage before avalanche; supports 48V bus systems with 20% margin.
R_DS(on) max @ 4.5V	2.4mΩ - Enables ≤0.5W conduction loss at 140A, critical for 12V/100A+ VRM phases.
I_D (Package)	195A - Continuous current limit defined by D²PAK thermal and bond-wire capacity.
Q_g typ.	91nC - Low gate charge reduces driver power and switching loss in high-frequency operation.
E_AS (Single Pulse)	1100mJ - Confirmed avalanche energy rating allows safe operation under inductive fault conditions.
t_rr	62ns - Fast body diode recovery minimizes shoot-through risk and commutation loss in sync-rectified topologies.
R_θJC	0.40°C/W - Junction-to-case thermal resistance enables direct heatsink mounting for >200W dissipation.

Pinout & Package

IRLSL3036PBF uses the D²PAK (TO-262) surface-mount package with exposed drain pad for thermal and electrical performance. The three terminals are arranged in G-D-S order (left to right when viewing top marking side with tab up).

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control input	Receives 4.5V–16V logic-level signal; internal R_G = 2.0Ω limits ringing and simplifies gate driver design.
Drain (D)	High-side power output	Exposed metal pad tied to drain; serves as primary thermal path and high-current return node.
Source (S)	Power reference / return	Low-inductance source connection; forms common reference for gate drive and current sensing.

Key Features

Feature	Design Value
Logic-level gate drive	Guaranteed turn-on at V_GS = 4.5V (R_DS(on) ≤ 2.4mΩ), compatible with 3.3V/5V microcontrollers and PWM controllers.
Enhanced body diode ruggedness	Rated for dI/dt ≥ 430A/µs and dV/dt > 50V/ns, enabling robust operation in hard-switched LLC and phase-shifted full-bridge converters.
Optimized R × Q_g figure-of-merit	2.4mΩ × 91nC = 218.4 mΩ·nC - superior conduction/switching trade-off vs. competing 60V MOSFETs in high-frequency SMPS.
Lead-free and RoHS-compliant	Meets IPC/JEDEC J-STD-020 moisture sensitivity level 1 (MSL1); reflow-compatible up to 260°C peak.
Full avalanche characterization	SOA curves validated per JEDEC JESD24-1; E_AS tested with L = 0.021mH, I_AS = 165A, R_G = 25Ω, T_J ≤ 175°C.

Applications

Server Voltage Regulator Modules

Telecom 48V Intermediate Bus Converters

Use Scenario: High-density 12V→0.8V buck converter delivering >200A per phase in AI accelerator cards.

IC Role / Device Role / Timing Role: Primary high-side switch in multiphase synchronous buck; operates at 300–600kHz with precise dead-time control.

Use Value: 2.4mΩ R_DS(on) reduces conduction loss by 35% vs. legacy 3.5mΩ devices, improving full-load efficiency by 0.8–1.2%.

Use Scenario: 48V→12V isolated DC-DC module for optical line terminal (OLT) power shelves.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side center-tapped topology; driven with complementary gate signals.

Use Value: 62ns t_rr and 310nC Q_rr minimize reverse recovery loss, increasing light-load efficiency by 2.1% at 10% load.

Uninterruptible Power Supply Inverters

Industrial Motor Drive Half-Bridges

Use Scenario: 60V battery-backed UPS inverter stage converting 48V DC to 230V AC via H-bridge.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge leg; handles bidirectional current during sinusoidal PWM modulation.

Use Value: 1100mJ E_AS rating ensures fault tolerance during short-circuit events without external snubbers.

Use Scenario: 24V/48V BLDC motor controller for automated guided vehicles (AGVs) with 150A peak phase current.

IC Role / Device Role / Timing Role: High-current phase-leg switch in 3-phase inverter; operated with 10–20kHz PWM and active freewheeling.

Use Value: 0.40°C/W R_θJC enables direct heatsink mounting, maintaining T_J < 125°C at 195A continuous without forced air.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFB3077PBF	Same D²PAK package, but 75V V_DSS, higher R_DS(on) (3.2mΩ max @ 4.5V), higher Q_g (120nC).	Better for 60V+ bus systems; less efficient at 48V due to higher conduction loss.	Choose only if system requires >65V blocking margin; avoid for 48V/12V VRMs where efficiency is critical.
STL220N6F7	60V, 220A package rating, lower R_DS(on) (1.7mΩ typ.), but requires 10V gate drive for full spec compliance.	Superior conduction loss, but incompatible with 4.5V logic drivers without level-shifting.	Select only when 10V gate drive is available and lowest possible R_DS(on) outweighs gate drive complexity.

Compared with IRLSL3036PBF, IRFB3077PBF trades off efficiency for higher voltage headroom, while STL220N6F7 improves conduction loss only at the cost of losing true logic-level compatibility-making IRLSL3036PBF the optimal balance for 48V systems requiring 4.5V drive and robust avalanche behavior.

Availability

IRLSL3036PBF is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRLSL3036PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability power conversion in datacenter, telecom, and industrial infrastructure applications.

FAQ

What is the maximum continuous drain current for IRLSL3036PBF at 100°C case temperature?

The maximum continuous drain current at T_C = 100°C is 110A, derived from linear derating of the 195A (T_C = 25°C) package limit using the 11W/°C derating factor. This value assumes proper PCB copper area and heatsinking per Figure 9 in the datasheet, and does not reflect silicon-limited current, which remains 270A at T_J = 25°C.

Can IRLSL3036PBF be used in parallel configurations?

Yes-its positive R_DS(on) temperature coefficient (0.061V/°C) ensures inherent current sharing across paralleled devices. Successful implementation requires matched gate drive loop inductance, symmetrical PCB layout, and thermal coupling via shared heatsink; typical designs achieve ≤10% current imbalance at full load with four devices.

Is the body diode suitable for reverse recovery in synchronous rectification?

Yes-the body diode is fully characterized for synchronous rectification with t_rr = 62ns (T_J = 25°C), Q_rr = 310nC, and I_RRM = 4.4A. Its dI/dt rating of 430A/µs and soft recovery behavior (low I_RRM/Q_rr ratio) reduce EMI and voltage overshoot compared to discrete Schottky alternatives.

What is the recommended gate resistor for hard-switching at 500kHz?

A 2.1Ω gate resistor is recommended for 500kHz hard-switching, based on the device's internal R_G = 2.0Ω and measured switching times (t_r = 220ns, t_f = 110ns). This value balances switching loss reduction against gate drive power and EMI; values below 1.5Ω increase ringing risk without meaningful speed gain.

IRLSL3036PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 195A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.4mOhm @ 165A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 140 nC @ 4.5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 11210 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 380W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262

IRLSL3036PBF FAQ

1.How can I place an order for IRLSL3036PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLSL3036PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLSL3036PBF reliable?

The price and inventory of IRLSL3036PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLSL3036PBF is usually 5 days.

3.What payment methods are accepted for IRLSL3036PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLSL3036PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLSL3036PBF?

IRLSL3036PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLSL3036PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLSL3036PBF?

For technical support, including IRLSL3036PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLSL3036PBF requirements.

6.How does Aetrix verify that IRLSL3036PBF is sourced from the original manufacturer or authorized distributors?

All IRLSL3036PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLSL3036PBF meets industry standards.

7.What is the process for return or replacement of IRLSL3036PBF?

All IRLSL3036PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLSL3036PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLSL3036PBF part is unused and in its original packaging.

Return procedure for IRLSL3036PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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