Infineon Technologies IRLS3036-7PPBF

Overview

IRLS3036-7PPBF from Infineon Technologies is a logic-level N-channel HEXFET power MOSFET in D2PAK-7L package, rated for 60 V V_DSS, 1.5 mΩ typical R_DS(on) at 4.5 V V_GS, and 240 A package-limited continuous drain current. It serves as a high-current synchronous rectifier or primary-side switch in hard-switched SMPS, UPS inverters, and DC motor drives where low conduction loss and fast switching are critical.

For engineers reviewing the IRLS3036-7PPBF datasheet, IRLS3036-7PPBF pinout, IRLS3036-7PPBF application, or IRLS3036-7PPBF equivalent, key selection criteria include its 110 nC total gate charge, 57 nC Q_gd, 1.3 V body diode forward voltage, 57 ns reverse recovery time at 125°C, and enhanced dV/dt ruggedness-critical for high-frequency, high-di/dt power stages.

Technical Context

This MOSFET employs planar silicon technology with optimized cell layout to achieve ultra-low R_DS(on) while maintaining robust avalanche capability (E_AS = 380 mJ) and superior dynamic dV/dt immunity. Its gate threshold voltage (1.0–2.5 V) ensures reliable turn-on with 3.3 V/4.5 V logic drivers, and its 1.9 Ω internal gate resistance supports controlled switching transitions.

The device integrates an intrinsic body diode characterized for 180 A pulsed source current and 140 nC reverse recovery charge (Q_rr) at 125°C, enabling stable operation in synchronous rectification without external Schottky assistance. C_{oss eff.(TR)} = 1630 pF and C_iss = 11270 pF reflect its suitability for resonant and ZVS topologies up to several hundred kHz.

Key Specifications

Pinout & Package

IRLS3036-7PPBF uses the D2PAK-7L (TO-263-7) surface-mount package with exposed drain paddle for thermal performance and seven terminals: three parallel drain pins (D), two source pins (S), one gate pin (G), and one Kelvin source (S_K) for accurate gate drive referencing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current logic-level MOSFET applications.

Compared with IRLS3036-7PPBF, IRL1404ZPBF trades 2.9 mΩ higher R_DS(on) for lower gate charge and cost, while IPB017N06NATMA1 offers marginally higher ruggedness at the expense of 15 nC extra gate charge-making IRLS3036-7PPBF optimal for 200+ A, 4.5 V-driven, thermally constrained applications.

Availability

IRLS3036-7PPBF is available at Aetrix Electronics and suitable for DC motor drives, uninterruptible power supplies, and high-frequency SMPS requiring stable component supply, long-term lifecycle support, and traceable industrial-grade sourcing.

Supply support for IRLS3036-7PPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with leadership in silicon and wide-bandgap power devices.

The IRLS3036-7PPBF belongs to Infineon's HEXFET logic-level MOSFET product line, engineered specifically for high-current, low-voltage switching in space-constrained industrial and computing power systems where 4.5 V gate drive compatibility and thermal efficiency are mandatory.

FAQ

What is the maximum continuous drain current for IRLS3036-7PPBF at 100°C case temperature?

At T_C = 100°C, the continuous drain current is 210 A (silicon-limited) per the Absolute Maximum Ratings table. This value reflects thermal derating from the 240 A rating at 25°C case temperature, based on the device's R_θJC = 0.40 °C/W and T_J(max) = 175°C limit.

Does IRLS3036-7PPBF require a gate resistor for safe operation?

Yes-a gate resistor is required to control dV/dt and prevent oscillation. With Q_g = 110 nC and typical driver rise time targets of 20–50 ns, a 2.1 Ω external resistor (per IR's recommended test condition) ensures stable turn-on while limiting peak gate current to ~7 A and damping parasitic ringing in high-di/dt layouts.

Can IRLS3036-7PPBF be used in parallel configurations?

Yes-its positive R_DS(on) temperature coefficient (0.059 V/°C for V_(BR)DSS, confirmed by Fig. 4) and Kelvin source pin enable stable current sharing. Parallel operation requires matched gate drive paths, symmetrical PCB layout, and individual gate resistors to ensure simultaneous switching and thermal balance.

What is the significance of the "7P" in IRLS3036-7PPBF?

The "7P" denotes the D2PAK-7L package variant-specifically a 7-pin version of the D2PAK outline with three drain leads, two source leads, one gate, and one Kelvin source. This differs from standard D2PAK-3L parts and is essential for achieving low-inductance, high-current, and precision gate-drive performance.