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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPU135N03L G

Name: IPU135N03L G
Brand: Infineon Technologies
SKU: IPU135N03L G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPU135N03L G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IPU135N03L G.pdf

Description:: MOSFET N-CH 30V 30A TO251-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPD135N03L G from Infineon Technologies is a 30 V, N-channel logic-level OptiMOS™ 3 power MOSFET in DPAK (PG-TO252-3) package, featuring 13.5 mΩ max R_DS(on) at V_GS = 10 V and 30 A continuous drain current at T_C = 25 °C. It is avalanche-rated, RoHS-compliant, and optimized for high-efficiency DC/DC converters and synchronous rectification in SMPS.

For engineers reviewing the IPD135N03L G datasheet, IPD135N03L G pinout, IPD135N03L G application, or IPD135N03L G equivalent, key selection criteria include its low gate charge × R_DS(on) figure of merit (4.8–6.4 nC total Q_g), 1.0–2.2 V gate threshold, and 770 pF typical input capacitance - all critical for fast-switching, high-density power stages.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 3 trench technology to achieve low conduction loss and fast switching with minimal gate drive requirements. Its logic-level gate enables direct drive from 3.3 V or 5 V controllers without level-shifting circuitry.

The device integrates an avalanche-rated body diode with 10 nC reverse recovery charge (Q_rr) and 0.98 V typical forward voltage (V_SD) at 30 A, supporting robust synchronous rectification and bidirectional current handling in buck, boost, and LLC topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input rails and transient margin in industrial DC/DC systems.
R_DS(on), max	13.5 mΩ at V_GS = 10 V - Enables ≤0.9 W conduction loss at 30 A, reducing thermal load in compact SMD layouts.
I_D, cont	30 A at T_C = 25 °C - Supports high-current output stages in server VRMs and telecom POL converters.
Q_g	4.8–6.4 nC (V_GS = 0–4.5 V) - Low gate charge minimizes driver power loss and enables >1 MHz switching with standard gate drivers.
C_iss	770 pF typ - Predictable input capacitance simplifies gate drive loop design and EMI filtering in high-frequency converters.
V_GS(th)	1.0–2.2 V - Ensures reliable turn-on with 3.3 V microcontrollers and avoids false triggering under noise.
E_AS	20 mJ - Rated single-pulse avalanche energy supports fault tolerance during inductive load switching or short-circuit events.

Pinout & Package

Package: PG-TO252-3 (DPAK), surface-mount, with exposed drain tab for thermal enhancement. Drain connected to copper pad on PCB for low R_thJC (4.9 K/W).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives gate drive signal; low input capacitance (770 pF C_iss) reduces driver loading and propagation delay.
Pin 2 / Tab (Drain)	Main current path (high-side or low-side)	Exposed metal tab serves as primary drain connection and thermal interface; must be soldered to large copper area for thermal management.
Pin 3 (Source)	Reference node for gate drive and current sensing	Provides return path for load current and reference for gate-source voltage; used for source degeneration or current monitoring.

Key Features

Feature	Design Value
Logic-level gate drive	Turns fully on at V_GS ≥ 4.5 V - eliminates need for gate driver ICs in 3.3 V/5 V control systems.
Avalanche-rated operation	20 mJ single-pulse E_AS - withstands inductive energy dump without failure in unclamped switching conditions.
Low R_DS(on) × Q_g FOM	~13.5 mΩ × 5.5 nC ≈ 74 - benchmark efficiency metric for high-frequency, high-current power stages.
Halogen-free & RoHS	Complies with IEC61249-2-21 and EU RoHS Directive - meets environmental compliance for global industrial and automotive supply chains.

Applications

Server Voltage Regulator Modules (VRMs)

Telecom Point-of-Load (POL) Converters

Use Scenario: High-current, multi-phase buck converter supplying CPU/GPU core voltage (0.8–1.2 V @ up to 200 A).

IC Role / Device Role: Low-side synchronous rectifier MOSFET in interleaved phase legs.

Use Value: 13.5 mΩ R_DS(on) and 30 A rating minimize conduction loss per phase; 4.8 nC Q_g enables efficient 500 kHz–1 MHz operation.

Use Scenario: Isolated or non-isolated 48 V-to-12 V/5 V conversion in base station power supplies.

IC Role / Device Role: Primary-side switch in active clamp forward or secondary-side synchronous rectifier.

Use Value: 30 V V_DS provides margin over 24 V/12 V bus transients; avalanche rating ensures reliability during line surges.

Industrial Motor Drive Half-Bridge Stages

USB-C PD Fast-Charging Power Stages

Use Scenario: 24 V BLDC motor gate driver stage with PWM-controlled H-bridge leg.

IC Role / Device Role: Low-side switch in half-bridge configuration driving gate of high-side MOSFET via bootstrap circuit.

Use Value: Logic-level V_GS(th) (1.0–2.2 V) ensures clean turn-on with MCU GPIO; 210 A pulsed ID supports peak motor startup currents.

Use Scenario: 20 V/5 A USB-C PD 3.0 programmable power supply output stage.

IC Role / Device Role: Synchronous rectifier in buck-boost or flyback topology delivering regulated 5–20 V output.

Use Value: 0.98 V V_SD and 10 nC Q_rr reduce reverse recovery loss and improve efficiency above 95% at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL135N3LLH6	13.5 mΩ R_DS(on) at V_GS = 10 V, but higher Q_g (9.5 nC) and no specified avalanche rating.	Lacks E_AS spec; less suitable for unclamped inductive loads or surge-prone environments.	Prefer IPD135N03L G where avalanche ruggedness and lower switching loss are required.
IRL3303PBF	12.5 mΩ R_DS(on) at V_GS = 10 V, but TO-220 package (higher R_thJA), no halogen-free certification.	Through-hole mounting limits board density; not compliant with latest environmental standards.	Choose IPD135N03L G for SMD scalability, thermal performance, and RoHS/halogen-free compliance.

Compared with STL135N3LLH6 and IRL3303PBF, IPD135N03L G delivers superior switching efficiency (lower Q_g × R_DS(on)), guaranteed avalanche capability, and DPAK packaging optimized for automated assembly and thermal dissipation in space-constrained power modules.

Availability

IPD135N03L G is available at Aetrix Electronics and suitable for server VRMs, telecom POL converters, and industrial motor drives requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support.

Supply support for IPD135N03L G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This device belongs to the OptiMOS™ 3 family - engineered specifically for high-efficiency, high-frequency DC/DC conversion in data center, telecom, and industrial power systems where low R_DS(on), fast switching, and robustness are mandatory.

FAQ

What is the maximum junction temperature for continuous operation?

The IPD135N03L G has a maximum operating junction temperature (T_j) of 175 °C, validated per JEDEC JESD22-A103. Thermal design must ensure R_thJC ≤ 4.9 K/W and sufficient PCB copper area to maintain T_j < 150 °C under worst-case ambient and power dissipation conditions.

Can this MOSFET be used in synchronous rectification without external Schottky diodes?

Yes - its integrated body diode has 0.98 V typical forward voltage at 30 A and 10 nC reverse recovery charge, enabling efficient synchronous rectification in buck, boost, and flyback topologies without external diodes, provided gate timing avoids shoot-through.

Is the drain tab electrically isolated from the PCB ground plane?

No - the drain tab (Pin 2) is internally connected to the drain terminal and must be electrically tied to the drain net. When mounted on PCB, it requires isolation from other nets via clearance and solder mask; thermal vias to inner ground planes are permitted only if those planes are at drain potential.

Does the device meet automotive AEC-Q101 qualification?

No - IPD135N03L G is qualified per JEDEC J-STD-20 and JESD22 for industrial applications, but it is not AEC-Q101 certified. For automotive use, Infineon offers the AEC-Q101-qualified IPD135N03LG variant with identical electrical specs and enhanced reliability testing.

IPU135N03L G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 13.5mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 10 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1000 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 31W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO251-3

IPU135N03L G FAQ

1.How can I place an order for IPU135N03L G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPU135N03L G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPU135N03L G reliable?

The price and inventory of IPU135N03L G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPU135N03L G is usually 5 days.

3.What payment methods are accepted for IPU135N03L G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPU135N03L G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPU135N03L G?

IPU135N03L G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPU135N03L G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPU135N03L G?

For technical support, including IPU135N03L G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPU135N03L G requirements.

6.How does Aetrix verify that IPU135N03L G is sourced from the original manufacturer or authorized distributors?

All IPU135N03L G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPU135N03L G meets industry standards.

7.What is the process for return or replacement of IPU135N03L G?

All IPU135N03L G units undergo pre-shipment inspection (PSI). If there is an issue with IPU135N03L G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPU135N03L G part is unused and in its original packaging.

Return procedure for IPU135N03L G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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