Infineon Technologies IRFSL4620PBF
- Part No.:
- IRFSL4620PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
IRFSL4620PBF.pdf
- Description:
- MOSFET N-CH 200V 24A TO262
- Quantity:
- Payment:

- Shipping:

Inventory:3,751
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Product details
Overview
IRFSL4620PBF from Infineon Technologies is a 200V, 24A N-channel D2PAK (TO-262) power MOSFET optimized for hard-switched and high-frequency SMPS applications. It features 63.7 mΩ typical RDS(on), 25 nC total gate charge, and enhanced body diode dV/dt and dI/dt capability for synchronous rectification in uninterruptible power supplies.
For engineers reviewing the IRFSL4620PBF datasheet, IRFSL4620PBF pinout, IRFSL4620PBF application, or IRFSL4620PBF equivalent, key selection criteria include avalanche energy rating (450 mJ), SOA-limited pulsed current (100 A), and thermally robust junction-to-case resistance (1.045 °C/W) in high-power switching designs.
Technical Context
This MOSFET employs a planar HEXFET structure with fully characterized avalanche SOA and dynamic dV/dt ruggedness up to 100 V/ns. Its body diode exhibits 78 ns reverse recovery time and 294 nC Qrr at 25°C, enabling reliable operation in discontinuous conduction mode (DCM) flyback and LLC resonant converters.
The device integrates low Coss eff.(TR) (317 pF) and Ciss (1710 pF) to minimize switching losses, while its 2.6 Ω internal gate resistance supports controlled turn-on/turn-off timing-critical for EMI management in 100–500 kHz power stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 200 V - Withstands DC bus voltages up to 170 V RMS in 120 VAC systems with margin. |
| RDS(on) max | 77.5 mΩ - Limits conduction loss to ≤4.4 W at 24 A continuous drain current. |
| ID @ TC=100°C | 17 A - Sustains full-load operation in enclosed industrial power supplies without derating. |
| EAS | 450 mJ - Supports unclamped inductive switching with 15 A avalanche current at 25°C start junction temperature. |
| Qg | 25 nC - Enables efficient gate drive with <1.5 W average power at 500 kHz switching frequency. |
| tr/tf | 22.4/14.8 ns - Delivers fast edge control for reduced overlap loss in synchronous buck topologies. |
| VSD | 1.3 V - Minimizes forward conduction loss in bidirectional power flow applications. |
Pinout & Package
IRFSL4620PBF uses the D2PAK (TO-262) surface-mount package with exposed drain pad for thermal enhancement. The three-terminal configuration supports high-current PCB mounting with low-inductance source connections.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control input | Receives 10 V logic-level drive to achieve full enhancement; threshold voltage 3.0–5.0 V ensures noise immunity. |
| D (Drain) | High-side power node | Connected to DC bus or transformer primary; electrically tied to exposed copper pad for thermal conduction to heatsink. |
| S (Source) | Reference return path | Serves as local ground reference for gate driver; low-inductance layout critical for dV/dt stability. |
Key Features
| Feature | Design Value |
|---|---|
| Avalanche-rated SOA | Thermally limited single-pulse EAS = 450 mJ enables robust overvoltage protection without external snubbers. |
| Enhanced body diode | 78 ns trr and 294 nC Qrr reduce switching loss and ringing in synchronous rectifier configurations. |
| Low Coss eff.(ER) | 113 pF - Reduces capacitive turn-on loss during zero-voltage switching (ZVS) transitions. |
| Lead-free construction | RoHS-compliant packaging meets IPC-J-STD-020D reflow profile requirements for industrial assembly. |
| Dynamic dV/dt ruggedness | Rated >100 V/ns - Prevents false turn-on during high-slew-rate transients in half-bridge motor drives. |
Applications
| Server PSU | Industrial UPS |
|---|---|
Use Scenario: High-efficiency 3 kW modular server power supply operating at 300 kHz with active clamp forward topology. IC Role / Device Role / Timing Role: Primary-side high-side switch handling 200 V DC bus with 24 A peak current and 100 ns dV/dt stress. Use Value: 63.7 mΩ RDS(on) and 25 nC Qg enable >95% efficiency at full load while maintaining thermal margin on 2-layer PCB. | Use Scenario: Online double-conversion UPS with battery backup, requiring 10 ms switchover and 100% overload tolerance. IC Role / Device Role / Timing Role: Inverter-stage switching element supporting 24 A continuous output with 100 A surge capability during fault conditions. Use Value: 450 mJ EAS and 1.045 °C/W RθJC ensure safe operation during short-circuit events without thermal runaway. |
| Hard-switched PFC | High-frequency DC-DC |
Use Scenario: 2 kW boost PFC stage in telecom rectifier, operating at 100 kHz with 200 V AC input. IC Role / Device Role / Timing Role: Boost switch managing 24 A average current and 150 V transient spikes during line surges. Use Value: 200 V VDSS and 77.5 mΩ RDS(on) max guarantee margin against 170 V RMS × √2 + 20% overshoot. | Use Scenario: 48 V–12 V isolated DC-DC converter for data center ASIC power delivery, switching at 400 kHz. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacing Schottky diodes to reduce conduction loss. Use Value: 1.3 V VSD and 78 ns trr cut forward drop by 40% versus 45 V Schottky, improving light-load efficiency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP20NM20 | 200 V, 20 A, 85 mΩ RDS(on), TO-220 package | Lacks D2PAK thermal performance; lower ID rating limits use in >1.5 kW designs | Preferred where through-hole mounting and lower cost outweigh thermal density needs. |
| IXTH24N20L | 200 V, 24 A, 70 mΩ RDS(on), TO-247 package | Higher RθJA (40 °C/W vs. 1.045 °C/W) requires external heatsink; larger footprint | Chosen when higher avalanche energy (600 mJ) is required and board space permits TO-247 mounting. |
Compared with STP20NM20 and IXTH24N20L, IRFSL4620PBF delivers superior thermal coupling via D2PAK's low RθJC, making it optimal for compact, high-power-density SMPS where PCB area and heatsink volume are constrained.
Availability
IRFSL4620PBF is available at Aetrix Electronics and suitable for high-efficiency synchronous rectification in SMPS, uninterruptible power supply inverters, and hard-switched PFC circuits requiring stable component supply across multi-year production cycles.
Supply support for IRFSL4620PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
This device belongs to Infineon's HEXFET Power MOSFET product line, engineered for high-reliability, high-frequency switching in mission-critical power conversion systems.
FAQ
What is the maximum allowable case temperature for continuous operation?
The IRFSL4620PBF supports continuous operation up to 100°C case temperature, delivering 17 A drain current at that point. Derating begins above this temperature per the linear derating factor of 0.96 W/°C, with absolute maximum junction temperature capped at 175°C.
Does this MOSFET require a gate resistor for stability?
Yes-a series gate resistor (typically 5–15 Ω) is recommended to dampen parasitic oscillation caused by trace inductance interacting with the 2.6 Ω internal gate resistance and 1710 pF Ciss. This prevents unintended turn-on during high dV/dt events in bridge configurations.
Can IRFSL4620PBF replace IRFS4620PBF in existing designs?
Yes-IRFSL4620PBF and IRFS4620PBF share identical electrical specifications, pinout, and D2PAK package. The "L" suffix denotes lead-free compliance per RoHS, with no functional or thermal performance difference from the legacy PbF version.
Is the body diode suitable for reverse recovery in ZVS circuits?
Yes-the body diode is fully characterized for reverse recovery, with 78 ns trr and 294 nC Qrr at 25°C. Its soft recovery behavior minimizes voltage overshoot during ZVS transitions, but design validation under actual operating di/dt and temperature conditions is essential.
IRFSL4620PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 77.5mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 38 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1710 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 144W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-262
IRFSL4620PBF FAQ
1.How can I place an order for IRFSL4620PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFSL4620PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFSL4620PBF reliable?
The price and inventory of IRFSL4620PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFSL4620PBF is usually 5 days.
3.What payment methods are accepted for IRFSL4620PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFSL4620PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFSL4620PBF?
IRFSL4620PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFSL4620PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFSL4620PBF?
For technical support, including IRFSL4620PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFSL4620PBF requirements.
6.How does Aetrix verify that IRFSL4620PBF is sourced from the original manufacturer or authorized distributors?
All IRFSL4620PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFSL4620PBF meets industry standards.
7.What is the process for return or replacement of IRFSL4620PBF?
All IRFSL4620PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFSL4620PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFSL4620PBF part is unused and in its original packaging.
Return procedure for IRFSL4620PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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