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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFS5620PBF

Name: IRFS5620PBF
Brand: Infineon Technologies
SKU: IRFS5620PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFS5620PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFS5620PBF.pdf

Description:: MOSFET N-CH 200V 24A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFS5620PBF from Infineon Technologies (formerly International Rectifier) is a 200 V, 24 A N-channel enhancement-mode power MOSFET in TO-262 (D²PAK) package, optimized for Class-D audio amplifier half-bridge stages. It delivers 63.7 mΩ R_DS(on) @ 10 V, 25 nC total gate charge, and 491 nC reverse recovery charge, enabling high-efficiency switching with low THD and EMI in compact audio systems.

For engineers reviewing the IRFS5620PBF datasheet, IRFS5620PBF pinout, IRFS5620PBF application, or IRFS5620PBF equivalent, key selection criteria include its 175°C junction rating, repetitive avalanche capability, low Q_RR, and thermal resistance of 1.045°C/W (junction-to-case), critical for sustained 300 W/channel operation into 8 Ω loads.

Technical Context

This MOSFET employs HEXFET® process technology to minimize on-resistance per die area while tightly controlling gate charge distribution (Q_gs1 = 6.3 nC, Q_gd = 7.9 nC) and body diode reverse recovery (t_rr = 98 ns typ., Q_rr = 491 nC). Its internal gate resistance of 2.6 Ω reduces ringing without external damping.

The device supports unclamped inductive switching with validated repetitive avalanche energy up to 450 mJ at T_J = 25°C and operates reliably under linear derating (0.96 W/°C above 100°C case temperature), making it suitable for high-fidelity audio output stages where voltage overshoot and thermal runaway must be avoided.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - Withstands rail voltages up to ±100 V in bridge-tied load (BTL) configurations without breakdown.
R_DS(on) @ 10 V	63.7 mΩ - Enables <1.5 W conduction loss at 24 A DC, critical for thermal management in sealed enclosures.
Q_g	25 nC - Reduces gate drive power requirement and allows use of lower-current drivers in multi-MOSFET arrays.
Q_rr	491 nC - Low reverse recovery charge minimizes shoot-through risk and EMI during dead-time transitions.
T_J(max)	175°C - Supports continuous operation in high ambient environments (e.g., automotive head units, powered speakers).
R_θJC	1.045°C/W - Enables direct heatsink mounting with predictable thermal path for accurate junction temperature estimation.
I_D @ T_C = 25°C	24 A - Sustains peak channel current in 300 W @ 8 Ω half-bridge designs with margin for transient overload.

Pinout & Package

IRFS5620PBF uses the TO-262 (D²PAK) surface-mount package with isolated drain tab. The three terminals are arranged in standard G–D–S order (left-to-right when viewed from top with marking side up and leads pointing downward).

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control input	Receives PWM signal; 2.6 Ω internal resistance damps oscillation without external resistor in most Class-D layouts.
Drain (D)	High-side switch node	Connected to positive rail in half-bridge; exposed metal tab provides low-inductance, low-thermal-resistance path to heatsink.
Source (S)	Power return / reference	Serves as local ground for gate driver and current sense; internal source inductance (L_S = 7.5 nH) impacts switching waveform fidelity.

Key Features

Feature	Design Value
Optimized Q_g/Q_sw ratio	Q_sw = 9.8 nC (39% of Q_g) enables fast, controlled turn-off to suppress cross-conduction in BTL amplifiers.
Low Q_RR body diode	Q_rr = 491 nC (typ.) reduces diode-induced distortion and eliminates need for external snubbers in typical audio frequencies.
175°C rated junction	Allows full-rated current delivery at elevated ambient temperatures common in enclosed audio chassis without derating.
Repetitive avalanche rated	Validated for ≥450 mJ single-pulse and repetitive operation up to 1% duty cycle, enhancing reliability against inductive kickback.
Low C_oss effective	C_oss(eff) = 138 pF minimizes Miller effect during high-dV/dt transitions, improving stability in high-gain feedback loops.

Applications

Home Theater Amplifiers

Automotive Audio Subwoofers

Use Scenario: High-power Class-D amplifier modules delivering 200–500 W per channel into 4–8 Ω speaker loads in compact AV receivers.

IC Role / Device Role / Timing Role: Output power switch in half-bridge topology; handles 200 kHz PWM switching with minimal conduction and switching loss.

Use Value: 63.7 mΩ R_DS(on) and 1.045°C/W R_θJC enable >90% efficiency at full power without forced air cooling.

Use Scenario: Sealed subwoofer enclosures in vehicles requiring high-current, thermally robust amplification under wide ambient temperature swings (−40°C to +85°C).

IC Role / Device Role / Timing Role: High-side switch in dual half-bridge configuration driving 2–4 Ω voice coils with 300 W RMS capability.

Use Value: 175°C T_J(max) and repetitive avalanche rating ensure survival during load dump transients and short-circuit events.

Professional PA System Modules

Powered Studio Monitors

Use Scenario: Rack-mountable 2–4 channel amplifiers for live sound reinforcement, operating continuously at high output levels in non-ventilated cabinets.

IC Role / Device Role / Timing Role: Primary switching element in interleaved Class-D output stage; synchronized to 300–500 kHz carrier for reduced filter size.

Use Value: Low Q_RR (491 nC) and tight t_rr distribution (98–147 ns) maintain THD <0.05% across full bandwidth (20 Hz–20 kHz).

Use Scenario: Near-field studio monitors with integrated Class-D amplification, where PCB space, thermal density, and EMI compliance are critical constraints.

IC Role / Device Role / Timing Role: Final-stage power switch in compact half-bridge; gate driven directly by integrated controller IC with minimal trace inductance.

Use Value: D²PAK package allows direct copper pour heatsinking on inner layers, reducing system height while maintaining R_θJA < 40°C/W.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Class-D audio MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW20NK50Z	500 V V_DS, 20 A I_D, R_DS(on) = 250 mΩ - higher voltage rating but 4× higher on-resistance.	Better suited for 400 V bus applications (e.g., industrial inverters); excessive conduction loss in 100 V audio rails.	Select only if higher breakdown margin is required and efficiency loss is acceptable.
IPP60R099C6	600 V V_DS, 48 A I_D, R_DS(on) = 99 mΩ, Q_g = 62 nC - higher voltage, higher gate charge, larger TO-220FP package.	Designed for SMPS, not audio-optimized; lacks low-Q_RR tuning and has slower body diode recovery (t_rr > 200 ns).	Not recommended for Class-D due to increased THD and EMI; consider only for general-purpose switching with lower frequency.

Compared with STW20NK50Z and IPP60R099C6, IRFS5620PBF offers the lowest R_DS(on) × Q_g product (1.59 Ω·nC) among 200 V devices, directly translating to superior efficiency and THD performance in audio-specific half-bridge topologies.

Availability

IRFS5620PBF is available at Aetrix Electronics and suitable for home theater amplifiers, automotive audio subsystems, and professional PA modules requiring stable component supply and long-term production continuity.

Supply support for IRFS5620PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with leadership in high-performance discrete power devices.

This MOSFET belongs to Infineon's HEXFET® Class-D Audio Power MOSFET product line, engineered specifically to meet the low-distortion, high-efficiency, and ruggedness demands of modern digital audio amplification systems.

FAQ

What is the maximum continuous drain current for IRFS5620PBF at 100°C case temperature?

The maximum continuous drain current is 14.4 A at T_C = 100°C, derived from the linear derating factor of 0.96 W/°C and the 72 W power dissipation limit at that temperature. This value ensures safe operation without exceeding the 175°C junction limit under steady-state thermal conditions.

Does IRFS5620PBF require a gate resistor for Class-D audio applications?

A small external gate resistor (typically 5–10 Ω) is recommended despite the 2.6 Ω internal resistance, to fine-tune switching speed and suppress high-frequency ringing caused by PCB trace inductance interacting with C_iss (1710 pF). This improves EMI performance without compromising THD.

Can IRFS5620PBF be used in synchronous rectification topologies?

No - IRFS5620PBF is not optimized for synchronous rectification. Its body diode has relatively high V_SD (1.3 V typ.) and slow reverse recovery (t_rr = 98 ns), making it unsuitable for high-frequency, low-voltage DC-DC converters where low forward drop and fast recovery are essential.

What is the significance of the 1.045°C/W R_θJC specification?

R_θJC = 1.045°C/W quantifies the thermal resistance between the silicon junction and the case (drain tab), enabling precise calculation of junction temperature rise (ΔT_J = P_diss × R_θJC). This allows designers to validate thermal design using measured case temperature instead of relying on less accurate ambient-based estimates.

IRFS5620PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 24A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 77.5mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1710 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 144W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRFS5620PBF FAQ

1.How can I place an order for IRFS5620PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS5620PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS5620PBF reliable?

The price and inventory of IRFS5620PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS5620PBF is usually 5 days.

3.What payment methods are accepted for IRFS5620PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS5620PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS5620PBF?

IRFS5620PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS5620PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS5620PBF?

For technical support, including IRFS5620PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS5620PBF requirements.

6.How does Aetrix verify that IRFS5620PBF is sourced from the original manufacturer or authorized distributors?

All IRFS5620PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS5620PBF meets industry standards.

7.What is the process for return or replacement of IRFS5620PBF?

All IRFS5620PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS5620PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS5620PBF part is unused and in its original packaging.

Return procedure for IRFS5620PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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