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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR4620PBF

Name: IRFR4620PBF
Brand: Infineon Technologies
SKU: IRFR4620PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR4620PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR4620PBF.pdf

Description:: MOSFET N-CH 200V 24A D-PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR4620PBF from Infineon Technologies is a 200V, 24A N-channel enhancement-mode HEXFET Power MOSFET in DPAK (TO-252) package, optimized for high-frequency hard-switching and synchronous rectification. It features 64 mΩ typical R_DS(on), 25 nC total gate charge, and enhanced body diode dV/dt and dI/dt capability for robust unclamped inductive switching in SMPS and UPS systems.

For engineers reviewing the IRFR4620PBF datasheet, IRFR4620PBF pinout, IRFR4620PBF application, or IRFR4620PBF equivalent, this device is selected for high-efficiency power conversion where low conduction loss, fast switching, and avalanche ruggedness are critical in 100–200V DC-link topologies.

Technical Context

This MOSFET employs planar V-groove silicon technology with fully characterized SOA and avalanche energy ratings (E_AS = 300 mJ). Its dynamic parameters-including 7.9 nC Q_gd, 1710 pF C_iss, and 125 pF C_oss-support precise gate drive design for ZVS/ZCS transitions in resonant converters.

The integrated body diode exhibits 78 ns reverse recovery time (T_J = 25°C, I_F = 15 A), 294 nC Q_rr, and 1.3 V forward voltage, enabling reliable synchronous rectification without external Schottky replacement in medium-power DC/DC stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	200 V - Withstands up to 200 V drain-source blocking voltage in continuous operation.
R_DS(on) max	78 mΩ - Ensures ≤1.8 W conduction loss at 15 A, supporting thermally constrained PCB-mount designs.
I_D @ T_C = 25°C	24 A - Supports high-current pulsed loads in motor drives and UPS inverters without derating.
Q_g typ	25 nC - Enables efficient 10–500 kHz switching with standard 1–2 A peak gate drivers.
E_AS	300 mJ - Allows safe single-pulse avalanche operation under unclamped inductive turn-off (e.g., relay/snubberless flyback).
trr	78 ns - Limits diode recovery-related switching loss and EMI in synchronous buck converters.
R_θJC	1.045 °C/W - Enables direct heatsink mounting for >20 W continuous dissipation in industrial enclosures.

Pinout & Package

IRFR4620PBF uses the DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical performance. Pin assignment is standardized across IR's DPAK logic-level and standard-gate MOSFETs.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Reference node for gate drive; connects to low-side return path and PCB ground plane.
Pin 2 (Gate)	Control input (G)	High-impedance MOS gate requiring <2.6 Ω internal resistance; sensitive to ESD and ringing.
Pin 3 (Drain)	Power output (D)	Exposed copper pad on bottom side; carries full load current and must be soldered to large copper pour.

Key Features

Feature	Design Value
Enhanced avalanche ruggedness	300 mJ single-pulse rating validated per JEDEC JESD24-11, eliminating need for external clamping in flyback snubberless designs.
Low Q_gd/Q_g ratio	7.9 nC / 25 nC = 0.32 - Reduces Miller-induced shoot-through risk and improves controllability in half-bridge configurations.
Optimized body diode dI/dt capability	Rated for 100 A/µs - Sustains rapid current reversal during synchronous rectification without oscillation or latch-up.
Lead-free and RoHS-compliant	Meets IPC-J-STD-020D reflow profile - Compatible with standard Pb-free assembly processes up to 260°C peak.

Applications

High-Efficiency Synchronous Rectifier

Uninterruptible Power Supply (UPS) Inverter

Use Scenario: Secondary-side rectification in 48–54 V output LLC resonant DC/DC converters delivering up to 300 W.

IC Role / Device Role / Timing Role: Low-side synchronous switch replacing Schottky diode; commutated at 300–500 kHz with dead-time-controlled gate drive.

Use Value: Reduces conduction loss by 45% vs. 40V Schottky, improving full-load efficiency from 92.1% to 94.7% at 25°C ambient.

Use Scenario: Half-bridge inverter stage converting 170–200 V DC bus to 120/230 V AC in line-interactive UPS systems.

IC Role / Device Role / Timing Role: High-side switching element operating in hard-switched PWM mode at 20–50 kHz with active thermal management.

Use Value: Avalanche-rated operation eliminates need for overvoltage clamps during battery sag transients, reducing BOM count by two TVS diodes.

Hard-Switched SMPS Primary Switch

Industrial Motor Drive Half-Bridge

Use Scenario: 100–200 V primary-side switch in offline flyback and forward converters up to 150 W.

IC Role / Device Role / Timing Role: Main power switch subjected to repetitive unclamped inductive turn-off stress during startup and overload.

Use Value: 300 mJ E_AS rating ensures reliable operation without snubber network, cutting transformer leakage inductance sensitivity by 60%.

Use Scenario: Low-voltage (≤200 V) BLDC inverter leg driving 1–3 kW PMSM motors in HVAC compressors and pumps.

IC Role / Device Role / Timing Role: Low-side switch in three-phase bridge; conducts continuous 15–20 A with 100 kHz PWM modulation.

Use Value: 1.045 °C/W R_θJC enables direct heatsink mounting, maintaining T_J < 125°C at 20 A without forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM20	R_DS(on) max = 90 mΩ; Q_g = 22 nC; E_AS = 220 mJ	Lower avalanche margin limits use in unclamped inductive circuits without snubbers	Prefer when gate drive current is constrained but avalanche stress is minimal.
IXTP24N20P	R_DS(on) max = 85 mΩ; Q_g = 34 nC; TO-220 package	Larger footprint and higher thermal resistance (R_θJC = 1.5 °C/W) reduce power density	Choose for through-hole prototyping or legacy board compatibility over DPAK.

Compared with STP20NM20 and IXTP24N20P, IRFR4620PBF delivers superior avalanche robustness and lower R_DS(on) in a thermally optimized surface-mount package-making it optimal for space-constrained, high-reliability power stages where unclamped switching and thermal management are critical.

Availability

IRFR4620PBF is available at Aetrix Electronics and suitable for high-efficiency synchronous rectification, uninterruptible power supply inverters, hard-switched SMPS, and industrial motor drive half-bridges requiring stable component supply and long-term lifecycle support.

Supply support for IRFR4620PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.

IRFR4620PBF belongs to Infineon's legacy HEXFET® Power MOSFET product line, designed specifically for high-frequency, high-ruggedness power conversion in industrial, telecom, and computing infrastructure.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFR4620PBF supports 17 A continuous drain current at T_C = 100°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package and requires adequate PCB copper area or heatsinking to sustain.

Does IRFR4620PBF have a built-in body diode, and what are its key recovery characteristics?

Yes-it integrates a monolithic p-n junction body diode rated for 15 A continuous source current. Key recovery specs include 78 ns t_rr, 294 nC Q_rr, and 7.6 A I_RRM at T_J = 25°C, enabling predictable synchronous rectification without external diode paralleling.

Can IRFR4620PBF be driven directly from a 3.3 V microcontroller GPIO?

No-its gate threshold voltage range is 3.0–5.0 V, and full enhancement requires ≥10 V V_GS to achieve 64 mΩ R_DS(on). A dedicated gate driver (e.g., IR2110, TC4420) or level-shifting circuit is required for reliable switching.

Is IRFR4620PBF suitable for avalanche-mode operation in production designs?

Yes-Infineon characterizes and guarantees single-pulse avalanche energy up to 300 mJ (E_AS) under defined test conditions. Repetitive avalanche is permitted only if junction temperature remains within −55°C to +175°C limits and thermal impedance is properly managed.

IRFR4620PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 24A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 78mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1710 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 144W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR4620PBF FAQ

1.How can I place an order for IRFR4620PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR4620PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR4620PBF reliable?

The price and inventory of IRFR4620PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR4620PBF is usually 5 days.

3.What payment methods are accepted for IRFR4620PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR4620PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR4620PBF?

IRFR4620PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR4620PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR4620PBF?

For technical support, including IRFR4620PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR4620PBF requirements.

6.How does Aetrix verify that IRFR4620PBF is sourced from the original manufacturer or authorized distributors?

All IRFR4620PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR4620PBF meets industry standards.

7.What is the process for return or replacement of IRFR4620PBF?

All IRFR4620PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR4620PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR4620PBF part is unused and in its original packaging.

Return procedure for IRFR4620PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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