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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFU4620PBF

Name: IRFU4620PBF
Brand: Infineon Technologies
SKU: IRFU4620PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFU4620PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IRFU4620PBF.pdf

Description:: MOSFET N-CH 200V 24A IPAK

Quantity:: RFQ Add To RFQ list

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Inventory:6,725

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Product details

Overview

IRFU4620PBF from Infineon Technologies (formerly International Rectifier) is a 200V, 24A N-channel enhancement-mode HEXFET Power MOSFET in DPAK (TO-252) package, optimized for high-frequency hard-switched SMPS and synchronous rectification. It features 64 mΩ typical R_DS(on), 25 nC total gate charge, and enhanced body diode dV/dt/dI/dt ruggedness for reliable unclamped inductive switching.

For engineers reviewing the IRFU4620PBF datasheet, IRFU4620PBF pinout, IRFU4620PBF application, or IRFU4620PBF equivalent, key selection criteria include avalanche energy rating (300 mJ), SOA-limited continuous current at 100°C (17 A), body diode reverse recovery time (78 ns at 25°C), and thermal resistance (1.045 °C/W junction-to-case).

Technical Context

This MOSFET employs planar V-groove silicon technology with fully characterized avalanche SOA and thermally limited single-pulse E_AS of 300 mJ. Its gate threshold voltage (3.0–5.0 V) and low 2.6 Ω internal gate resistance support robust drive in high-di/dt environments.

The device integrates an intrinsic fast-recovery body diode with 1.3 V forward voltage at 15 A and 78 ns reverse recovery time at 100 V, 15 A, enabling efficient synchronous rectification without external Schottky replacement in 100–200 kHz SMPS topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	200 V - Maximum blocking voltage before avalanche onset; supports 130 V bus designs with 1.5× safety margin.
R_DS(on) max	78 mΩ @ T_J = 100°C - Determines conduction loss in high-current paths; impacts thermal design at >10 A DC loads.
I_D continuous	24 A @ T_C = 25°C - Validated continuous current under ideal heatsinking; derates to 17 A at 100°C case temperature.
Q_g typ	25 nC - Gate drive energy requirement; defines minimum driver peak current (e.g., 2.5 A for 10 ns rise time).
E_AS	300 mJ - Single-pulse avalanche energy limit; enables safe operation during inductive turn-off transients in UPS and motor drives.
t_rr	78 ns - Body diode reverse recovery time at 100 V, 15 A - Critical for minimizing commutation loss in synchronous buck converters.
R_θJC	1.045 °C/W - Junction-to-case thermal resistance - Enables direct calculation of junction temperature rise under known power dissipation and heatsink interface.

Pinout & Package

IRFU4620PBF uses the DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection. The three terminals are arranged in standard G-D-S order (Gate-Drain-Source) on the bottom side.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control electrode	Receives 10 V gate drive to achieve full enhancement; threshold range 3.0–5.0 V ensures noise immunity in noisy industrial environments.
Drain (D)	High-side switch node	Connected to PCB copper pour for heat sinking and high-current return path; electrically tied to package tab.
Source (S)	Reference node / current return	Serves as local ground reference for gate drive; low-inductance layout essential to minimize shoot-through risk in half-bridge configurations.

Key Features

Feature	Design Value
Enhanced avalanche ruggedness	300 mJ single-pulse E_AS validated per JEDEC JESD24-11; eliminates need for external snubbers in flyback/LLC primary switches.
Optimized body diode	78 ns t_rr and 1.3 V V_SD at 15 A enable synchronous rectification up to 200 kHz without cross-conduction penalty.
Low gate charge	25 nC Q_g reduces driver power loss and allows use of low-cost gate drivers (e.g., IR2110, UCC27531) in high-efficiency SMPS.
Thermally efficient DPAK	1.045 °C/W R_θJC enables >20 W dissipation with minimal heatsink - suitable for compact 1U server PSU and telecom brick designs.
Lead-free and RoHS compliant	Pb-free plating and halogen-free molding compound meet IPC-J-STD-609B and EU Directive 2011/65/EU requirements for industrial and medical equipment.

Applications

High-Efficiency Synchronous Rectification

Uninterruptible Power Supply (UPS)

Use Scenario: Secondary-side switch in isolated DC-DC converters for telecom rectifiers and server VRMs operating at 100–200 kHz.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes to reduce conduction loss and improve efficiency by 2–4%.

Use Value: 64 mΩ R_DS(on) and 78 ns t_rr minimize both steady-state and switching losses, enabling >94% efficiency at 48 V input, 12 V/20 A output.

Use Scenario: Battery charging and inverter stage in line-interactive UPS systems with 200 V DC bus.

IC Role / Device Role / Timing Role: High-side switch in half-bridge inverter driving transformer-coupled output stage.

Use Value: 300 mJ E_AS and 17 A continuous current at 100°C ensure reliable operation during battery discharge surges and load transients without thermal runaway.

Hard-Switched SMPS

Industrial Motor Drives

Use Scenario: Primary-side switch in offline flyback and forward converters for industrial control power supplies.

IC Role / Device Role / Timing Role: Main power switch handling 130 V reflected output voltage with unclamped inductive turn-off stress.

Use Value: Fully characterized avalanche SOA and 200 V V_DSS allow safe operation without snubber networks, reducing BOM cost and board area.

Use Scenario: Half-bridge leg in 3-phase BLDC motor gate driver modules for HVAC and pump inverters.

IC Role / Device Role / Timing Role: Low-side switch controlling phase current commutation with fast body diode recovery.

Use Value: 25 nC Q_g and 22.4 ns rise time enable clean 20 kHz PWM edge control, minimizing torque ripple and audible noise.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFR4620PbF	Same die, IPAK (TO-251) package; R_θJA = 50 °C/W vs. 110 °C/W for IRFU4620PbF; identical electrical specs.	Better thermal performance in through-hole layouts; less suitable for ultra-thin SMT assemblies.	Select when mechanical mounting constraints favor vertical leaded packages or when higher ambient airflow is available.
STP20NM20	200 V, 20 A, 75 mΩ R_DS(on); lower Q_g (18 nC); no specified E_AS rating; different SOA curve.	Limited avalanche capability restricts use in unclamped inductive circuits; requires snubber in flyback primary.	Prefer for low-power, space-constrained applications where avalanche stress is absent and gate drive power must be minimized.

Compared with IRFR4620PbF, IRFU4620PBF offers superior thermal interface via DPAK's exposed drain pad but requires tighter PCB layout for thermal vias; versus STP20NM20, it delivers verified avalanche robustness critical for industrial UPS and motor drive reliability.

Availability

IRFU4620PBF is available at Aetrix Electronics and suitable for high-frequency SMPS, uninterruptible power supply (UPS), and industrial motor drive applications requiring stable component supply across multi-year production cycles.

Supply support for IRFU4620PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The HEXFET Power MOSFET product line was originally developed by International Rectifier and continues under Infineon to deliver rugged, high-reliability discrete power switches for demanding hard-switched and synchronous rectification applications.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFU4620PBF supports 17 A continuous drain current at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This value accounts for thermal derating due to reduced channel conductivity and increased R_DS(on) at elevated temperatures, and assumes proper PCB copper area and thermal vias for heat transfer.

Does IRFU4620PBF have a specified avalanche energy rating?

Yes - the datasheet specifies a thermally limited single-pulse avalanche energy (E_AS) of 300 mJ at T_J = 25°C. This rating is validated per JEDEC JESD24-11 and applies to unclamped inductive switching events, such as those occurring in flyback or LLC resonant converter primary switches.

Can IRFU4620PBF be used as a synchronous rectifier in a 12 V output buck converter?

Yes - its 64 mΩ typical R_DS(on), 78 ns body diode reverse recovery time, and 1.3 V V_SD make it suitable for low-voltage synchronous rectification up to 200 kHz. Layout must minimize source inductance to avoid shoot-through, and gate drive must provide clean 10 V logic-level signals synchronized to the main switch.

How does the DPAK package affect thermal performance compared to TO-220?

The DPAK (TO-252) package provides 1.045 °C/W junction-to-case thermal resistance - significantly better than typical TO-220 parts (~1.5–2.0 °C/W) - due to its large exposed drain pad soldered directly to PCB copper. However, its junction-to-ambient performance depends heavily on PCB layout, requiring ≥4 thermal vias and ≥1 in² 2-oz copper pour for optimal results.

IRFU4620PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 24A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 78mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1710 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 144W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK (TO-251AA)

IRFU4620PBF FAQ

1.How can I place an order for IRFU4620PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFU4620PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFU4620PBF reliable?

The price and inventory of IRFU4620PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFU4620PBF is usually 5 days.

3.What payment methods are accepted for IRFU4620PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFU4620PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFU4620PBF?

IRFU4620PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFU4620PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFU4620PBF?

For technical support, including IRFU4620PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFU4620PBF requirements.

6.How does Aetrix verify that IRFU4620PBF is sourced from the original manufacturer or authorized distributors?

All IRFU4620PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFU4620PBF meets industry standards.

7.What is the process for return or replacement of IRFU4620PBF?

All IRFU4620PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFU4620PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFU4620PBF part is unused and in its original packaging.

Return procedure for IRFU4620PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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