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FETs, MOSFETs

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
94-2183PBF

94-2183PBF

MOSFET P-CH 150V 13A D2PAK

Infineon Technologies

9,369 0.00
RFQ
94-2183PBF

Datasheet

* - Tube Active - - - - - - - - - - - - - - - - -
94-2436PBF

94-2436PBF

MOSFET N-CH 55V 30A DPAK

Infineon Technologies

5,400 0.00
RFQ
94-2436PBF

Datasheet

* - Tube Active - - - - - - - - - - - - - - - - -
98-0193

98-0193

IC MOSFET HS PWR SW 35A D2PAK

Infineon Technologies

4,894 0.00
RFQ
98-0193

Datasheet

* - Tube Active - - - - - - - - - - - - - - - - -
AUXBNLS3036TRL

AUXBNLS3036TRL

MOSFET N-CH 60V 195A D2-PAK

Infineon Technologies

6,271 0.00
RFQ
AUXBNLS3036TRL

Datasheet

* - Tube Active - - - - - - - - - - - - - - - - -
AUXDIFZ44ESTRL

AUXDIFZ44ESTRL

MOSFET N-CH 60V 48A D2PAK

Infineon Technologies

6,674 0.00
RFQ
AUXDIFZ44ESTRL

Datasheet

* - Tube Active - - - - - - - - - - - - - - - - -
IPI50R399CPXKSA2

IPI50R399CPXKSA2

MOSFET N-CH 500V 9A TO262-3

Infineon Technologies

4,556 0.00
RFQ
IPI50R399CPXKSA2

Datasheet

CoolMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 9A (Tc) 10V 399mOhm @ 4.9A, 10V 3.5V @ 330µA 23 nC @ 10 V ±20V 890 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO262-3
IPP023N04NGHKSA1

IPP023N04NGHKSA1

MOSFET N-CH 40V 90A TO220-3

Infineon Technologies

8,760 0.00
RFQ
IPP023N04NGHKSA1

Datasheet

OptiMOS™ 3 - Tube Active - - - - - - - - - - - - - - - - -
IPP037N06L3GHKSA1

IPP037N06L3GHKSA1

MOSFET N-CH 60V 90A TO220-3

Infineon Technologies

4,133 0.00
RFQ
IPP037N06L3GHKSA1

Datasheet

OptiMOS™ 3 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 4.5V, 10V 3.7mOhm @ 90A, 10V 2.2V @ 93µA 79 nC @ 4.5 V ±20V 13000 pF @ 30 V - 167W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
IPP05CN10NGHKSA1

IPP05CN10NGHKSA1

MOSFET N-CH 100V 100A TO-220

Infineon Technologies

8,386 0.00
RFQ
IPP05CN10NGHKSA1

Datasheet

OptiMOS™ 2 - Tube Active - - - 100A (Tc) - - - - - - - - - - - - -
SPP11N65C3HKSA1

SPP11N65C3HKSA1

MOSFET N-CH 650V 11A TO-220

Infineon Technologies

3,532 0.00
RFQ
SPP11N65C3HKSA1

Datasheet

CoolMOS™ - Tube Active - - - 11A (Tc) - - - - - - - - - - - - -
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