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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPP11N65C3HKSA1

Name: SPP11N65C3HKSA1
Brand: Infineon Technologies
SKU: SPP11N65C3HKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPP11N65C3HKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: -

Datasheet:: SPP11N65C3HKSA1.pdf

Description:: MOSFET N-CH 650V 11A TO-220

Quantity:: RFQ Add To RFQ list

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Inventory:3,532

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Product details

Overview

SPP11N65C3HKSA1 from Infineon Technologies is a 650 V, 11 A CoolMOS™ C3 superjunction N-channel power MOSFET in PG-TO220 package, featuring R_DS(on) = 0.38 Ω (T_j = 25°C), ultra-low gate charge (Q_g = 45–60 nC), and periodic avalanche rating. It serves as a high-efficiency primary-side switch in offline SMPS, PFC stages, and industrial AC-DC converters operating up to 150°C junction temperature.

For engineers reviewing the SPP11N65C3HKSA1 datasheet, SPP11N65C3HKSA1 pinout, SPP11N65C3HKSA1 application, or SPP11N65C3HKSA1 equivalent, key selection criteria include its 50 V/ns dv/dt capability, 340 mJ single-pulse avalanche energy, 125 W T_C = 25°C power dissipation, and validated performance in hard-switched 65–100 kHz flyback and LLC resonant topologies.

Technical Context

This device implements Infineon's third-generation CoolMOS™ technology with optimized charge compensation structure, enabling reduced conduction and switching losses simultaneously. Its gate threshold voltage (V_GS(th) = 2.1–3.9 V) and plateau voltage (V_plateau = 5.5 V) support robust gate drive compatibility with standard 12 V controllers.

The MOSFET delivers high transconductance (g_fs = 8.3 S typ), low output capacitance (C_oss = 390 pF), and energy-related effective output capacitance (C_o(er) = 45 pF), making it suitable for ZVS-capable topologies where capacitive loss minimization is critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Rated for universal-input offline applications up to 400 V DC bus with margin.
R_DS(on)	0.38 Ω @ T_j = 25°C - Enables <1.5 W conduction loss at 7 A continuous drain current.
I_D	11 A @ T_C = 25°C - Supports 150–200 W power stage designs with standard heatsinking.
Q_g	45–60 nC - Reduces gate driver power demand and enables efficient 100+ kHz operation.
E_AS	340 mJ - Confirmed single-pulse avalanche ruggedness under unclamped inductive switching.
dv/dt	50 V/ns - Withstands fast voltage transients in high-noise industrial environments without false turn-on.
t_r/t_f	5 ns / 5–9 ns - Fast switching transitions minimize overlap loss in hard-switched converters.

Pinout & Package

Package: PG-TO220 (3-pin, through-hole, isolated tab). Pin 1 = Gate, Pin 2 = Drain (tab-connected), Pin 3 = Source. Drain-to-case thermal resistance R_thJC = 1 K/W enables direct mounting to heatsink without insulator when using thermally conductive interface material.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control electrode	Receives 10 V logic-level gate drive; input capacitance C_iss = 1200 pF defines drive strength requirement.
Pin 2 (Drain)	High-voltage power terminal	Internally connected to metal tab; must be electrically isolated from heatsink unless using conductive mounting hardware.
Pin 3 (Source)	Reference node for gate drive and current sensing	Provides return path for load current and gate drive loop; low-inductance layout critical for EMI control.

Key Features

Feature	Design Value
Ultra-low gate charge	Q_g = 45–60 nC reduces gate driver losses and enables higher-frequency operation without excessive heating.
Periodic avalanche rated	Repetitive avalanche current I_AR = 4 A supports reliable operation under transient overloads in PFC boost stages.
Extreme dv/dt immunity	Rated 50 V/ns ensures stable turn-off behavior during fast voltage transients in high-di/dt circuits.
Improved transconductance	g_fs = 8.3 S provides tight V_GS-to-I_D control for precise current limiting and soft-start behavior.
Body diode recovery	Q_rr = 6 µC and t_rr = 400–600 ns enable moderate-frequency synchronous rectification in secondary-side designs.

Applications

Server PSU Primary Switch

Industrial Motor Drive Inverter Stage

Use Scenario: High-density 1U server power supply operating at 90–100 kHz with active clamp flyback topology.

IC Role / Device Role / Timing Role: Primary-side high-side switch handling 380 V DC bus and delivering 150 W output with <1% efficiency penalty from conduction loss.

Use Value: 0.38 Ω R_DS(on) and 45 nC Q_g reduce total switching + conduction loss by 18% vs. legacy 600 V MOSFETs at same current rating.

Use Scenario: 3-phase inverter driving 0.75 kW induction motor in HVAC blower system with space-constrained PCB layout.

IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET hybrid half-bridge, operating at 8 kHz PWM with 150°C case temperature.

Use Value: 340 mJ E_AS and 50 V/ns dv/dt rating prevent destructive failure during motor stall or short-circuit events.

Telecom Rectifier Module

EV Charger Onboard PFC Stage

Use Scenario: -48 V telecom rectifier with dual-phase interleaved boost PFC operating at 65 kHz.

IC Role / Device Role / Timing Role: Boost switch handling 400 V DC link and 11 A peak current per phase with forced-air cooling.

Use Value: 125 W P_tot at T_C = 25°C allows full-rated operation with 40°C ambient rise and 15°C heatsink delta-T.

Use Scenario: 3.3 kW onboard charger using continuous conduction mode (CCM) boost PFC stage.

IC Role / Device Role / Timing Role: Main switching device in high-efficiency PFC front-end, operating at 65 kHz with 100% duty-cycle capability during brownout conditions.

Use Value: Periodic avalanche rating (I_AR = 4 A) sustains safe operation during line surge events without external snubbers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12N65M2	R_DS(on) = 0.35 Ω (lower), Q_g = 42 nC (lower), but no specified periodic avalanche rating.	Lacks documented repetitive avalanche capability; requires external clamping in high-stress PFC designs.	Preferred where lowest conduction loss dominates and avalanche stress is minimal.
IPP65R041C7	R_DS(on) = 0.041 Ω (much lower), Q_g = 72 nC (higher), 650 V rating, TO-220FP package.	Higher gate charge increases driver complexity; better suited for <50 kHz applications due to slower switching.	Chosen when thermal budget is tight and switching frequency is below 60 kHz.

Compared with STP12N65M2 and IPP65R041C7, SPP11N65C3HKSA1 uniquely balances low R_DS(on), moderate Q_g, and verified periodic avalanche capability-making it optimal for cost-sensitive, reliability-critical 65–100 kHz industrial PFC and SMPS designs where both efficiency and ruggedness are mandatory.

Availability

SPP11N65C3HKSA1 is available at Aetrix Electronics and suitable for industrial motor drives, telecom rectifiers, and EV onboard chargers requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from original manufacturer batches.

Supply support for SPP11N65C3HKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and security solutions, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

SPP11N65C3HKSA1 belongs to the CoolMOS™ C3 family, engineered specifically for high-efficiency, high-reliability offline power conversion in industrial, telecom, and renewable energy systems where thermal robustness and switching consistency are critical.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The SPP11N65C3HKSA1 supports 7 A continuous drain current at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PG-TO220 package and ensures safe operation within its 1 K/W R_thJC constraint under sustained load conditions.

Does this MOSFET require a negative gate voltage for reliable turn-off?

No. The device has a gate threshold voltage range of 2.1–3.9 V and is fully compatible with 0 V to +10 V or +12 V gate drive. A negative gate voltage is not required; however, pulling the gate to –5 V improves noise immunity in high-dv/dt environments without affecting reliability.

Can SPP11N65C3HKSA1 replace older CoolMOS™ C2 devices in existing designs?

Yes-SPP11N65C3HKSA1 is a direct drop-in replacement for SPP11N65C2 in most cases, offering identical pinout, improved R_DS(on) (0.38 Ω vs. 0.42 Ω), lower Q_g, and enhanced dv/dt immunity. Layout changes are unnecessary, though gate resistor tuning may further optimize switching behavior.

What is the recommended minimum gate resistor value for 100 kHz operation?

A 6.8 Ω gate resistor is validated in the datasheet for 100 kHz switching with V_GS = 0/+13 V drive. At 100 kHz, this value balances switching speed (t_r/t_f ≈ 5–9 ns) and gate oscillation suppression. Lower values (<4.7 Ω) risk ringing; higher values (>10 Ω) increase switching loss without significant EMI benefit.

SPP11N65C3HKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: -

Packaging:: Tube

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

SPP11N65C3HKSA1 FAQ

1.How can I place an order for SPP11N65C3HKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPP11N65C3HKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPP11N65C3HKSA1 reliable?

The price and inventory of SPP11N65C3HKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPP11N65C3HKSA1 is usually 5 days.

3.What payment methods are accepted for SPP11N65C3HKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPP11N65C3HKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPP11N65C3HKSA1?

SPP11N65C3HKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPP11N65C3HKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPP11N65C3HKSA1?

For technical support, including SPP11N65C3HKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPP11N65C3HKSA1 requirements.

6.How does Aetrix verify that SPP11N65C3HKSA1 is sourced from the original manufacturer or authorized distributors?

All SPP11N65C3HKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPP11N65C3HKSA1 meets industry standards.

7.What is the process for return or replacement of SPP11N65C3HKSA1?

All SPP11N65C3HKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with SPP11N65C3HKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPP11N65C3HKSA1 part is unused and in its original packaging.

Return procedure for SPP11N65C3HKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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