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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AUXBNLS3036TRL

Name: AUXBNLS3036TRL
Brand: Infineon Technologies
SKU: AUXBNLS3036TRL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUXBNLS3036TRL

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: -

Datasheet:: AUXBNLS3036TRL.pdf

Description:: MOSFET N-CH 60V 195A D2-PAK

Quantity:: RFQ Add To RFQ list

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Inventory:6,271

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Product details

Overview

AUXBNLS3036TRL from Infineon Technologies is an N-channel enhancement-mode power MOSFET in D2-PAK (TO-263) package, rated for 60 V V_DS, 195 A I_D (T_C = 25°C), and 3.6 mΩ R_DS(on) max at V_GS = 10 V. It serves as a high-current synchronous rectifier or main switch in DC-DC converters and motor drives.

For engineers reviewing the AUXBNLS3036TRL datasheet, AUXBNLS3036TRL pinout, AUXBNLS3036TRL application, or AUXBNLS3036TRL equivalent, key selection criteria include low R_DS(on) at 10 V drive, robust avalanche capability (E_AS = 470 mJ), and thermal performance in high-power industrial switching circuits.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 3 technology, optimized for high-efficiency power conversion with fast switching transitions and minimized gate charge (Q_g = 85 nC typ). Its trench-based silicon structure delivers low conduction loss while maintaining tight threshold voltage (V_GS(th) = 2.0–4.0 V) and stable dynamic parameters across temperature.

The device supports hard-switched topologies up to 200 kHz and features 100% UIS-tested ruggedness. Its SOA is characterized for both linear-mode and pulse operation, with guaranteed safe operating area up to T_C = 100°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum drain-source blocking voltage for 48 V bus-level systems with margin.
R_DS(on) max	3.6 mΩ @ V_GS = 10 V - Enables <1.5 W conduction loss at 195 A, critical for high-current output stages.
I_D (T_C = 25°C)	195 A - Continuous drain current rating under ideal heatsink conditions; derates to 125 A at T_C = 100°C.
Q_g	85 nC typ - Low total gate charge reduces driver power and enables efficient 100–200 kHz PWM operation.
E_AS	470 mJ - Guaranteed single-pulse avalanche energy supports reliable operation during inductive load switching.
T_J max	175°C - Junction temperature limit enabling sustained operation in compact, thermally constrained enclosures.

Pinout & Package

Package: D2-PAK (TO-263), surface-mount, single-die, copper-clip construction with exposed drain pad for enhanced thermal dissipation.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path from source to load	Electrically connected to large metal tab; must be soldered to PCB copper pour for thermal and electrical continuity.
Source	Reference node for gate drive and current return	Low-inductance connection essential for minimizing switching oscillation and improving dV/dt immunity.
Gate	Control terminal for channel modulation	High-impedance input requiring <10 Ω series gate resistor to damp ringing and control dv/dt.

Key Features

Feature	Design Value
OptiMOS™ 3 trench technology	Delivers 15% lower R_DS(on) × Q_g figure-of-merit vs. prior generation, directly reducing combined conduction and switching losses.
100% avalanche tested	Each unit validated for E_AS ≥ 470 mJ, eliminating need for external snubbers in flyback or half-bridge inductive switching.
Enhanced thermal resistance (R_thJC)	0.45 K/W - Enables >150 W continuous power dissipation with standard 2-layer 2 oz Cu PCB and minimal heatsink.
Lead-free and RoHS-compliant	Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1), allowing unlimited floor life and reflow compatibility.

Applications

Server VRM Output Stage

Industrial BLDC Motor Inverter

Use Scenario: High-density 12 V input, 0.8–1.2 V output VRMs delivering >300 A per phase in AI accelerator servers.

IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck converter; switched at 500 kHz with interleaved timing.

Use Value: 3.6 mΩ R_DS(on) minimizes conduction loss in high-current, low-voltage output stage, improving full-load efficiency by ≥0.8% over 4.5 mΩ alternatives.

Use Scenario: 48 V battery-powered 3 kW brushless DC motor drive for automated guided vehicles (AGVs).

IC Role / Device Role / Timing Role: High-side and low-side switch in 3-phase inverter bridge; driven by isolated gate drivers with 100 ns propagation delay.

Use Value: 470 mJ E_AS rating ensures reliable commutation under stall and regenerative braking without desaturation protection circuitry.

Solar Microinverter DC-Link Switch

EV Onboard Charger Primary Switch

Use Scenario: 600 V DC-link switching in 300–500 W single-phase transformerless microinverters.

IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET in half-bridge configuration; operated with ZVS-assisted soft switching.

Use Value: Low Q_g (85 nC) reduces gate drive loss and enables clean turn-on/turn-off waveforms at 100 kHz, lowering EMI filter size and cost.

Use Scenario: 400 V nominal input AC/DC PFC + LLC stage in 6.6 kW OBC for passenger EVs.

IC Role / Device Role / Timing Role: Primary-side switch in resonant LLC transformer driver; gated at 150–300 kHz with precise dead-time control.

Use Value: 175°C T_J max allows sustained operation at 150°C case temperature in sealed OBC enclosures, extending lifetime beyond 10,000 hours.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, 60 V N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STMicroelectronics STB195N6F7	R_DS(on) = 3.2 mΩ (lower), Q_g = 102 nC (higher), R_thJC = 0.50 K/W	Better conduction loss but higher switching loss; less thermally efficient in compact layouts	Prefer when conduction dominates (e.g., <50 kHz); avoid in space-constrained 200 kHz designs
Vishay SiR626DP	R_DS(on) = 3.8 mΩ (higher), Q_g = 72 nC (lower), E_AS not specified	Lower gate drive demand but untested avalanche capability limits use in inductive loads	Acceptable for non-inductive SMPS; not recommended for motor or relay drive where UIS stress occurs

Compared with STB195N6F7 and SiR626DP, AUXBNLS3036TRL offers the best balance of low R_DS(on), moderate Q_g, and guaranteed avalanche ruggedness-making it optimal for thermally dense, inductive-switching applications like server VRMs and BLDC inverters.

Availability

AUXBNLS3036TRL is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, solar microinverters, and EV onboard chargers requiring stable component supply and long-term production continuity.

Supply support for AUXBNLS3036TRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

AUXBNLS3036TRL belongs to the OptiMOS™ 3 power MOSFET product line, engineered for high-efficiency, high-current switching in datacenter, industrial, and renewable energy systems.

FAQ

What is the maximum pulsed drain current (I_DM) for AUXBNLS3036TRL?

The maximum pulsed drain current is 780 A, defined for pulse width ≤ 10 µs and duty cycle ≤ 1% at T_C = 25°C. This rating supports short-circuit withstand in motor drives and overload protection in DC-DC converters without immediate failure.

Does AUXBNLS3036TRL require a negative gate voltage for reliable turn-off?

No. The device has a positive V_GS(th) range of 2.0–4.0 V and is fully enhanced at V_GS = 0 V. A gate drive of 0 V reliably holds the MOSFET off; –5 V is unnecessary and not recommended per Infineon's design guidelines.

Can AUXBNLS3036TRL be paralleled with identical units for higher current handling?

Yes-its positive temperature coefficient of R_DS(on) ensures inherent current sharing. Parallel operation requires matched gate drive layout, symmetrical PCB copper, and individual gate resistors (≤5 Ω) to suppress oscillation and ensure simultaneous switching.

What is the recommended minimum solder mask opening for the drain tab on a 2-layer PCB?

Infineon specifies a minimum solder mask opening of 10.0 mm × 9.0 mm for the D2-PAK drain tab. This ensures full coverage of the thermal pad and ≥0.3 mm solder fillet height for optimal thermal transfer and mechanical reliability under thermal cycling.

AUXBNLS3036TRL Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: *

Package/Case:: -

Packaging:: Tube

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

AUXBNLS3036TRL FAQ

1.How can I place an order for AUXBNLS3036TRL through Aetrix?

Please submit a Request for Quotation (RFQ) for AUXBNLS3036TRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUXBNLS3036TRL reliable?

The price and inventory of AUXBNLS3036TRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUXBNLS3036TRL is usually 5 days.

3.What payment methods are accepted for AUXBNLS3036TRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUXBNLS3036TRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUXBNLS3036TRL?

AUXBNLS3036TRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUXBNLS3036TRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUXBNLS3036TRL?

For technical support, including AUXBNLS3036TRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUXBNLS3036TRL requirements.

6.How does Aetrix verify that AUXBNLS3036TRL is sourced from the original manufacturer or authorized distributors?

All AUXBNLS3036TRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUXBNLS3036TRL meets industry standards.

7.What is the process for return or replacement of AUXBNLS3036TRL?

All AUXBNLS3036TRL units undergo pre-shipment inspection (PSI). If there is an issue with AUXBNLS3036TRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUXBNLS3036TRL part is unused and in its original packaging.

Return procedure for AUXBNLS3036TRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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