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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP023N04NGHKSA1

Name: IPP023N04NGHKSA1
Brand: Infineon Technologies
SKU: IPP023N04NGHKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP023N04NGHKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: -

Datasheet:: IPP023N04NGHKSA1.pdf

Description:: MOSFET N-CH 40V 90A TO220-3

Quantity:: RFQ Add To RFQ list

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Inventory:8,760

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Product details

Overview

IPP023N04NGHKSA1 from Infineon Technologies is a 40 V, 180 A, 2.3 mΩ single N-channel TrenchMOS™ power transistor in PG-TO263-3 package, optimized for high-efficiency synchronous rectification and DC-DC conversion in server VRMs and industrial motor drives. It features ultra-low R_DS(on), avalanche-rated operation, and gate charge of 102 nC at V_GS = 10 V.

For engineers reviewing the IPP023N04NGHKSA1 datasheet, IPP023N04NGHKSA1 pinout, IPP023N04NGHKSA1 application, or IPP023N04NGHKSA1 equivalent, key selection criteria include continuous drain current (180 A), R_DS(on) at 10 V (2.3 mΩ), thermal resistance (0.5 K/W junction-to-case), gate threshold voltage (2.0–4.0 V), and safe operating area under pulsed conditions.

Technical Context

This device uses Infineon's TrenchMOS™ process to achieve low on-resistance with robust body diode performance and controlled gate charge profile. Its vertical structure supports high-current conduction with minimal voltage drop and fast switching transitions.

Designed for hard-switched and synchronous rectifier topologies, it delivers stable R_DS(on) over temperature (≤3.7 mΩ at T_j = 150 °C) and withstands repetitive unclamped inductive switching up to 100 mJ at 25 °C with I_D = 90 A.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum drain-source blocking voltage for 12 V/48 V input systems
I_D, cont	180 A - Continuous drain current at T_C = 25 °C enables high-power density board layouts
R_DS(on)	2.3 mΩ @ V_GS = 10 V - Enables <1.5 W conduction loss at 80 A in VRM output stages
Q_g	102 nC @ V_GS = 10 V - Supports efficient 300–500 kHz switching with standard gate drivers
Z_thJC	0.5 K/W - Junction-to-case thermal resistance allows direct heatsink mounting without thermal interface degradation
E_AS	100 mJ - Avalanche energy rating ensures reliability in inductive load switching
V_GS(th)	2.0–4.0 V - Gate threshold compatible with 3.3 V and 5 V logic-level control

Pinout & Package

PG-TO263-3 (D²PAK) package with exposed drain pad for thermal and electrical connection; three terminals: Drain (tab), Source (pin 2), Gate (pin 1).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path collector	Electrically and thermally connected to PCB copper pour; requires solder mask opening and ≥100 mm² 2-oz copper area
Source (Pin 2)	Reference node for gate drive	Low-inductance return path for gate loop; critical for EMI control in high-dI/dt applications
Gate (Pin 1)	Control electrode	Requires 10–15 Ω series gate resistor to damp oscillation; sensitive to layout parasitics

Key Features

Feature	Design Value
TrenchMOS™ cell architecture	Enables 2.3 mΩ R_DS(on) in D²PAK while maintaining >100 mJ avalanche capability
Ultra-low gate charge (102 nC)	Reduces driver power loss and enables use with cost-effective 1-A peak gate drivers
Optimized body diode recovery (t_rr = 55 ns)	Minimizes reverse recovery losses in synchronous buck converters
Lead-free and RoHS-compliant	Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1) for reflow compatibility

Applications

Server VRM Output Stage

Industrial BLDC Motor Inverter

Use Scenario: High-current, high-frequency buck converter delivering 50–100 A at 0.8–1.2 V to CPU/GPU cores.

IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET replacing Schottky diode to reduce conduction loss and improve efficiency above 90%.

Use Value: 2.3 mΩ R_DS(on) cuts conduction loss by >60% vs. 4.5 mΩ alternatives, enabling 1–2 °C lower junction temperature at full load.

Use Scenario: 3-phase inverter driving 1–5 kW permanent magnet motors in CNC spindles and pumps.

IC Role / Device Role / Timing Role: Low-side switch in 6-pack topology handling 40–80 A phase current with 20 kHz PWM.

Use Value: 102 nC Q_g and 0.5 K/W Z_thJC allow stable operation at 85 °C case temperature without derating.

Telecom 48 V DC-DC Converter

EV Onboard Charger Auxiliary Stage

Use Scenario: Isolated forward or LLC converter stepping 48 V down to 12 V for base station subsystems.

IC Role / Device Role / Timing Role: Primary-side switch in active clamp forward topology operating at 250–400 kHz.

Use Value: 100 mJ E_AS rating ensures robustness against voltage spikes during transformer reset transitions.

Use Scenario: Secondary-side synchronous rectifier in 3.3 kW AC/DC stage converting 400 V DC to 12 V for vehicle control modules.

IC Role / Device Role / Timing Role: High-current rectifier in center-tapped or full-bridge configuration.

Use Value: Low R_DS(on) and fast body diode enable >97% efficiency at 100 A output, reducing heatsink mass by 35%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB023N04N G	Same die, PG-TO220 package; higher Z_thJC (0.9 K/W) and larger footprint	Suitable for lower-power designs (<100 A) where heatsinking is less constrained	Select when mechanical fit or legacy TO-220 socket compatibility is required
IRFB4115PBF	Higher R_DS(on) (3.2 mΩ), higher Q_g (130 nC), non-avalanche rated	Limited to non-inductive or clamped switching; not recommended for unclamped flyback or motor freewheeling	Choose only if cost is primary constraint and avalanche stress is absent in system design

Compared with IPB023N04N G and IRFB4115PBF, IPP023N04NGHKSA1 delivers superior thermal performance and ruggedness in high-current synchronous rectification, making it optimal for space-constrained, high-reliability server and industrial power stages.

Availability

IPP023N04NGHKSA1 is available at Aetrix Electronics and suitable for server VRMs, industrial motor inverters, and telecom DC-DC converters requiring stable component supply and long-term production continuity.

Supply support for IPP023N04NGHKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to Infineon's OptiMOS™ 5 family, engineered for high-efficiency, high-current power conversion in datacenter, industrial, and renewable energy systems.

FAQ

What is the maximum allowable junction temperature for reliable operation?

The absolute maximum junction temperature is 175 °C per datasheet limits. For continuous operation, Infineon recommends limiting T_j to ≤150 °C to ensure 10-year lifetime under thermal cycling. Derating curves show R_DS(on) increases to 3.7 mΩ at 150 °C, requiring appropriate heatsink sizing based on Z_thJC = 0.5 K/W and ambient conditions.

Does this MOSFET require a negative gate turn-off voltage?

No. The device operates reliably with 0 V to 10 V gate drive and does not require negative turn-off bias. Its V_GS(th) range (2.0–4.0 V) ensures clean turn-on with standard 3.3 V or 5 V logic, and its low Miller charge (Q_gd = 22 nC) minimizes risk of false turn-on during high dV/dt events.

Can IPP023N04NGHKSA1 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) enables stable current sharing. Layout must ensure matched gate drive paths and symmetrical source inductance; typical practice uses individual 10 Ω gate resistors and Kelvin source connections. Parallel operation beyond two units requires careful thermal coupling analysis due to localized hot spots.

Is the PG-TO263-3 package lead-free and halogen-free?

Yes. The device complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 MSL1 classification. The terminations are 100% matte tin, and the molding compound is halogen-free per IEC 61249-2-21, supporting lead-free reflow profiles up to 260 °C peak temperature.

IPP023N04NGHKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 3

Package/Case:: -

Packaging:: Tube

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

IPP023N04NGHKSA1 FAQ

1.How can I place an order for IPP023N04NGHKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP023N04NGHKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP023N04NGHKSA1 reliable?

The price and inventory of IPP023N04NGHKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP023N04NGHKSA1 is usually 5 days.

3.What payment methods are accepted for IPP023N04NGHKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP023N04NGHKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP023N04NGHKSA1?

IPP023N04NGHKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP023N04NGHKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP023N04NGHKSA1?

For technical support, including IPP023N04NGHKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP023N04NGHKSA1 requirements.

6.How does Aetrix verify that IPP023N04NGHKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP023N04NGHKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP023N04NGHKSA1 meets industry standards.

7.What is the process for return or replacement of IPP023N04NGHKSA1?

All IPP023N04NGHKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP023N04NGHKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP023N04NGHKSA1 part is unused and in its original packaging.

Return procedure for IPP023N04NGHKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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