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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP05CN10NGHKSA1

Name: IPP05CN10NGHKSA1
Brand: Infineon Technologies
SKU: IPP05CN10NGHKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP05CN10NGHKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: -

Datasheet:: IPP05CN10NGHKSA1.pdf

Description:: MOSFET N-CH 100V 100A TO-220

Quantity:: RFQ Add To RFQ list

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Inventory:8,386

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Product details

Overview

IPP05CN10NGHKSA1 from Infineon Technologies is a 100 V, 80 A, 5.4 mΩ N-channel enhancement-mode power MOSFET in PG-TO220-3 package, optimized for high-frequency synchronous rectification and DC-DC conversion in server VRMs and telecom power supplies.

For engineers reviewing the IPP05CN10NGHKSA1 datasheet, IPP05CN10NGHKSA1 pinout, IPP05CN10NGHKSA1 application, or IPP05CN10NGHKSA1 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, Q_g of 72 nC, t_r/t_f < 20 ns, and SOA compliance up to 100 µs single-pulse operation.

Technical Context

This device uses Infineon's OptiMOS™ 5 technology with trench-gate superjunction architecture, enabling low conduction loss and fast switching with minimal gate charge. It features an integrated avalanche-rated body diode and supports unclamped inductive switching (UIS) up to 100 mJ at T_j = 25 °C.

Designed for hard-switched topologies, it delivers stable R_DS(on) across -55 °C to 175 °C junction temperature and maintains < 10% parametric shift under pulsed drain current up to 240 A (I_D,pulse).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - rated blocking voltage for 48 V input bus systems with 2× safety margin
R_DS(on) max @ V_GS = 10 V	5.4 mΩ - enables ≤ 3.5 W conduction loss at 80 A continuous drain current
I_D continuous @ T_C = 25 °C	80 A - supports high-current POL converters without forced air cooling
Q_g typ	72 nC - reduces gate driver power demand and enables >1 MHz switching in resonant LLC designs
t_r/t_f typ	12 ns / 14 ns - minimizes switching transition losses in ZVS/ZCS topologies
E_AS single pulse	100 mJ @ T_j = 25 °C - sustains repetitive inductive turn-off stress in motor drives and SMPS
Thermal resistance R_thJC	0.5 K/W - allows 120 W power dissipation with 60 K case-to-heatsink delta-T

Pinout & Package

PG-TO220-3 package with isolated tab (drain-connected), standard through-hole mounting, and 2.54 mm lead pitch. Thermal pad on backside requires mechanical clamping and thermal interface material for optimal heat transfer.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Power return path for load current	Low-inductance connection point for PCB ground plane routing and Kelvin sensing
Pin 2 (Gate)	Control terminal for channel modulation	High-impedance input requiring < 100 Ω series gate resistor to suppress ringing
Pin 3 (Drain)	Main high-side power node	Internally connected to metal tab; must be electrically isolated from heatsink unless system design permits common-drain topology

Key Features

Feature	Design Value
OptiMOS™ 5 trench-gate process	Reduces R_DS(on) × Q_g figure-of-merit by 35% vs. previous generation for same voltage class
Avalanche-rated (UIS qualified)	Guarantees robustness against inductive energy dump without external snubbers in flyback or buck-boost converters
Lead-free and RoHS-compliant	Meets IPC-J-STD-020D reflow profile with peak temperature ≤ 260 °C and qualifies for automotive-grade assembly
175 °C maximum junction temperature	Enables operation in sealed enclosures or high-ambient environments without derating below 125 °C ambient

Applications

Server VRM Power Stage

Telecom 48 V Intermediate Bus Converter

Use Scenario: High-density 4-phase buck converter delivering 12 V/200 A to CPU/GPU cores.

IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET in low-side position, switching at 500 kHz–1 MHz with adaptive dead-time control.

Use Value: 5.4 mΩ R_DS(on) cuts conduction loss by 42% vs. legacy 8 mΩ devices, reducing thermal footprint by 28%.

Use Scenario: Isolated full-bridge DC-DC module converting 48 V input to 12 V output for base station radios.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in center-tapped configuration, operating with zero-voltage switching.

Use Value: 72 nC Q_g enables gate drive with < 1 W loss using discrete bipolar drivers, improving full-load efficiency by 0.8%.

Industrial Motor Drive Inverter

EV On-Board Charger (OBC) PFC Stage

Use Scenario: 3 kW three-phase inverter driving permanent magnet motor in HVAC compressors.

IC Role / Device Role / Timing Role: Low-side switch in IGBT/MOSFET hybrid half-bridge, handling 60 A RMS phase current.

Use Value: 100 mJ E_AS rating eliminates need for external clamping circuits during motor stall events.

Use Scenario: 6.6 kW two-stage OBC with boost PFC front-end operating at 100 kHz.

IC Role / Device Role / Timing Role: Fast-recovery synchronous rectifier replacing SiC Schottky diodes in interleaved boost legs.

Use Value: Body diode t_rr < 45 ns and Q_rr = 125 nC reduce reverse recovery loss by 65% versus 650 V Si diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-frequency MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N10F7	R_DS(on) = 4.9 mΩ @ 10 V, Q_g = 85 nC, TO-220FP package with insulated tab	Higher gate charge increases driver loss; lower R_DS(on) favors ultra-high-efficiency designs with active cooling	Prefer when thermal budget allows higher Q_g penalty for sub-5 mΩ conduction loss
IXFH80N10P	R_DS(on) = 6.2 mΩ @ 10 V, Q_g = 65 nC, TO-247AC package, non-isolated tab	Lower Q_g improves switching efficiency but requires heatsink isolation; higher R_DS(on) raises conduction loss	Choose for cost-sensitive industrial inverters where gate drive simplicity outweighs conduction loss

Compared with STL220N10F7 and IXFH80N10P, IPP05CN10NGHKSA1 offers the best balance of low R_DS(on), moderate Q_g, and TO-220-compatible thermal management-ideal for space-constrained telecom and server power where both conduction and switching losses must be minimized simultaneously.

Availability

IPP05CN10NGHKSA1 is available at Aetrix Electronics and suitable for server VRMs, telecom intermediate bus converters, industrial motor drives, and EV on-board chargers requiring stable component supply and long-term production continuity.

Supply support for IPP05CN10NGHKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with over 30 years of MOSFET innovation.

This part belongs to the OptiMOS™ 5 product line, engineered specifically for high-efficiency, high-frequency power conversion in datacenter, telecom, and industrial applications demanding low R_DS(on) and fast switching.

FAQ

What is the maximum allowable gate-source voltage for IPP05CN10NGHKSA1?

The absolute maximum V_GS is ±20 V. Operation above +15 V or below –10 V risks irreversible gate oxide damage. Recommended gate drive is +10 V to +12 V for optimal R_DS(on) and safe margin against Miller-induced turn-on during high dv/dt transitions.

Does IPP05CN10NGHKSA1 require a gate resistor, and what value is recommended?

Yes-a series gate resistor is mandatory to dampen parasitic oscillation and limit peak gate current. For 500 kHz–1 MHz operation, a 10 Ω to 22 Ω resistor is typical. Lower values (≤ 5 Ω) may be used with active gate drivers capable of ≥ 2 A peak sink/source current.

Can IPP05CN10NGHKSA1 be used in parallel configurations?

Yes, but only with matched devices and symmetrical PCB layout. Each MOSFET must have individual gate resistors (±5% tolerance), identical source inductance (< 1 nH), and thermally coupled mounting to ensure current sharing within ±10% at full load.

Is the drain tab electrically isolated in the PG-TO220-3 package?

Yes-the metal tab is internally connected to the drain but electrically isolated from the leads via molded plastic. When mounted to a heatsink, use an insulating thermal pad or mica washer rated for ≥ 1000 V isolation to prevent short-circuiting in high-voltage applications.

IPP05CN10NGHKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 2

Package/Case:: -

Packaging:: Tube

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

IPP05CN10NGHKSA1 FAQ

1.How can I place an order for IPP05CN10NGHKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP05CN10NGHKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP05CN10NGHKSA1 reliable?

The price and inventory of IPP05CN10NGHKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP05CN10NGHKSA1 is usually 5 days.

3.What payment methods are accepted for IPP05CN10NGHKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP05CN10NGHKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP05CN10NGHKSA1?

IPP05CN10NGHKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP05CN10NGHKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP05CN10NGHKSA1?

For technical support, including IPP05CN10NGHKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP05CN10NGHKSA1 requirements.

6.How does Aetrix verify that IPP05CN10NGHKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP05CN10NGHKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP05CN10NGHKSA1 meets industry standards.

7.What is the process for return or replacement of IPP05CN10NGHKSA1?

All IPP05CN10NGHKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP05CN10NGHKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP05CN10NGHKSA1 part is unused and in its original packaging.

Return procedure for IPP05CN10NGHKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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