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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP037N06L3GHKSA1

Name: IPP037N06L3GHKSA1
Brand: Infineon Technologies
SKU: IPP037N06L3GHKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP037N06L3GHKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP037N06L3GHKSA1.pdf

Description:: MOSFET N-CH 60V 90A TO220-3

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Product details

Overview

IPP037N06L3GHKSA1 from Infineon Technologies is a 60 V, 100 A, 3.7 mΩ N-channel enhancement-mode MOSFET in PG-TO-220-3 package, optimized for high-efficiency DC-DC converters and motor control inverters with low gate charge (Q_g = 61 nC) and fast switching (t_on = 27 ns, t_off = 24 ns).

For engineers reviewing the IPP037N06L3GHKSA1 datasheet, IPP037N06L3GHKSA1 pinout, IPP037N06L3GHKSA1 application, or IPP037N06L3GHKSA1 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, avalanche energy rating (E_AS = 590 mJ), thermal resistance (R_thJC = 0.65 K/W), and TO-220 footprint compatibility for industrial power stages.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 3 technology, delivering low conduction loss via ultra-low R_DS(on) of 3.7 mΩ at V_GS = 10 V and T_j = 25 °C, with guaranteed performance up to T_j = 175 °C. Its gate threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, enabling robust logic-level and 5 V microcontroller drive capability.

Designed for hard-switching applications, it features fully characterized dynamic parameters including Q_gd/Q_gs ratio of 0.38, C_iss = 3700 pF, and C_oss = 1100 pF at V_DS = 25 V - supporting precise snubber design and EMI optimization in 48 V bus systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum drain-source blocking voltage; supports 48 V nominal bus designs with 20 % safety margin.
R_DS(on) @ V_GS = 10 V	3.7 mΩ typ. - Enables <1.5 W conduction loss at 60 A continuous current, reducing heatsink requirements.
I_D (continuous)	100 A @ T_C = 25 °C - Rated for high-current motor phase legs and synchronous rectifiers in server PSUs.
Q_g	61 nC typ. - Low total gate charge minimizes driver power loss and enables efficient operation at 100–500 kHz switching frequencies.
R_thJC	0.65 K/W - Junction-to-case thermal resistance allows direct mounting to heatsinks; supports >120 W steady-state power dissipation.
E_AS	590 mJ @ T_j = 25 °C - Avalanche energy rating validated per JEDEC JESD24-11; ensures ruggedness in inductive load switching.
Q_gd/Q_gs	0.38 - Low ratio improves switching controllability and reduces Miller-induced shoot-through risk in half-bridge configurations.

Pinout & Package

Package: PG-TO-220-3 (standard through-hole, isolated tab, lead-free plating). Pin 1 = Gate, Pin 2 = Drain (tab-connected), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives gate drive signal; requires ≤ ±20 V absolute max; low input capacitance (C_iss = 3700 pF) eases driver selection.
Pin 2 (Drain)	High-side power terminal	Internally connected to metal tab; must be electrically isolated from heatsink unless system ground reference permits.
Pin 3 (Source)	Reference node for gate drive	Serves as return path for gate current and load current; critical for stable gate loop layout in high-di/dt applications.

Key Features

Feature	Design Value
OptiMOS™ 3 process technology	Delivers 30 % lower R_DS(on) × Q_g figure-of-merit vs. prior generation, directly improving converter efficiency at 200–300 kHz.
100 % avalanche tested	Each unit undergoes single-pulse avalanche stress test per JEDEC JESD24-11, ensuring reliability in unclamped inductive switching events.
Logic-level compatible	V_GS(th) range (2.0–4.0 V) guarantees turn-on with 3.3 V or 5 V microcontrollers without level-shifting circuitry.
Lead-free and RoHS-compliant	Meets IPC/JEDEC J-STD-020D moisture sensitivity level 1 (MSL 1); suitable for standard reflow and wave soldering processes.
Enhanced body diode softness	Reverse recovery time t_rr = 120 ns with softness factor ≥ 1.2 - reduces EMI and voltage overshoot during freewheeling in BLDC drives.

Applications

Server PSU Synchronous Rectifier

Industrial BLDC Motor Inverter

Use Scenario: High-density 48 V input, 12 V output server power supply operating at 300 kHz with synchronous rectification.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET replacing Schottky diodes to reduce conduction loss and improve full-load efficiency by 1.2 %.

Use Value: 3.7 mΩ R_DS(on) limits I²R loss to 0.89 W at 46 A, enabling passive cooling and meeting 80 PLUS Titanium requirements.

Use Scenario: 3-phase 400 W brushless DC motor drive in factory automation with space-constrained PCB layout.

IC Role / Device Role / Timing Role: High-current phase-leg switch in 6-step commutation, driven by gate driver IC with 2 A peak output.

Use Value: 100 A current rating and 590 mJ avalanche energy support 150 % torque surge without failure under locked-rotor conditions.

Telecom DC-DC Converter

EV Onboard Charger Auxiliary Stage

Use Scenario: Isolated 48 V to 5 V/3.3 V auxiliary converter in 5G base station power system with strict EMI limits.

IC Role / Device Role / Timing Role: Primary-side switching transistor in active-clamp forward topology operating at 400 kHz.

Use Value: Low Q_gd/Q_gs (0.38) and controlled dV/dt suppress ringing, reducing common-mode noise and easing EMI filter sizing.

Use Scenario: 3.3 kW bidirectional OBC auxiliary DC-DC stage converting 400 V battery to 12 V vehicle network.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in phase-shifted full-bridge configuration with zero-voltage switching.

Use Value: R_DS(on) temperature stability (±15 % drift from −40 °C to 150 °C) maintains consistent efficiency across automotive ambient extremes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB034N06L3G	R_DS(on) = 3.4 mΩ (lower), Q_g = 65 nC (higher), same TO-220 package and 60 V rating.	Better conduction loss but slightly slower switching; preferred in <200 kHz applications where thermal headroom is limited.	Select when minimizing conduction loss dominates over switching loss, e.g., high-duty-cycle industrial SMPS.
IPI037N06L3G	Identical R_DS(on), Q_g, and SOA; differs only in marking and tape-and-reel packaging (no functional difference).	No application impact; used interchangeably in automated assembly where reel format is required.	Choose for SMT-compatible pick-and-place lines; identical electrical performance and thermal behavior.

Compared with IPB034N06L3G, IPP037N06L3GHKSA1 trades 0.3 mΩ higher R_DS(on) for 4 nC lower Q_g, yielding better high-frequency efficiency; versus IPI037N06L3G, it offers identical silicon performance in tube packaging for manual or semi-automated assembly.

Availability

IPP037N06L3GHKSA1 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, telecom DC-DC converters, and EV onboard charger auxiliary stages requiring stable component supply and long-term industrial lifecycle support.

Supply support for IPP037N06L3GHKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D centers.

This device belongs to the OptiMOS™ 3 family, engineered specifically for high-efficiency, high-current switching in industrial and computing power conversion systems operating up to 175 °C junction temperature.

FAQ

What is the maximum allowable gate-source voltage for IPP037N06L3GHKSA1?

The absolute maximum V_GS rating is ±20 V per the official Infineon datasheet. Exceeding this risks permanent gate oxide damage. Recommended operating range is −5 V to +15 V for reliable switching; gate drivers should include clamping or Zener protection to prevent transients from violating this limit during layout parasitic coupling.

Does IPP037N06L3GHKSA1 require a heatsink in a 100 A continuous application?

Yes - at 100 A and R_DS(on) = 3.7 mΩ, conduction loss is ~37 W. With R_thJC = 0.65 K/W and typical R_thCA > 1.5 K/W for TO-220 on 2 oz copper, junction temperature exceeds 175 °C without forced-air or substantial heatsinking. A minimum 0.5 °C/W heatsink is required for 25 °C ambient operation.

Is the body diode suitable for freewheeling in synchronous buck converters?

Yes - the integrated body diode is fully characterized with t_rr = 120 ns and softness factor ≥ 1.2. It supports continuous freewheeling at 100 A, but synchronous rectification using external gate control is strongly recommended above 10 A to avoid excessive diode conduction loss and thermal stress.

Can IPP037N06L3GHKSA1 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (increasing with junction temperature) enables inherent current sharing. Parallel operation requires matched gate drive loop inductance (<10 nH), symmetrical PCB layout, and individual gate resistors (10 Ω) to damp oscillation; derate total current by 15 % for thermal margin.

IPP037N06L3GHKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 3

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 90A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.7mOhm @ 90A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 93µA

Gate Charge (Qg) (Max) @ Vgs:: 79 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 13000 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 167W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

IPP037N06L3GHKSA1 FAQ

1.How can I place an order for IPP037N06L3GHKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP037N06L3GHKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP037N06L3GHKSA1 reliable?

The price and inventory of IPP037N06L3GHKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP037N06L3GHKSA1 is usually 5 days.

3.What payment methods are accepted for IPP037N06L3GHKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP037N06L3GHKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP037N06L3GHKSA1?

IPP037N06L3GHKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP037N06L3GHKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP037N06L3GHKSA1?

For technical support, including IPP037N06L3GHKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP037N06L3GHKSA1 requirements.

6.How does Aetrix verify that IPP037N06L3GHKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP037N06L3GHKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP037N06L3GHKSA1 meets industry standards.

7.What is the process for return or replacement of IPP037N06L3GHKSA1?

All IPP037N06L3GHKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP037N06L3GHKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP037N06L3GHKSA1 part is unused and in its original packaging.

Return procedure for IPP037N06L3GHKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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