Infineon Technologies BB 804 SF3 E6327

Overview

BB804SF3E6327 from Infineon Technologies is a silicon variable capacitance diode (varactor) in SOT23 package with common-cathode dual-diode monolithic construction, designed for FM tuner tuning circuits. It delivers 42–47.5 pF capacitance at 2 V, 1.65–1.71 capacitance ratio (C₂ᵥ/C₈ᵥ), −330 ppm/K temperature coefficient, and 0.18 Ω series resistance at 100 MHz - enabling precise, low-distortion voltage-controlled resonance in HiFi radio front-ends.

For engineers reviewing the BB804SF3E6327 datasheet, BB804SF3E6327 pinout, BB804SF3E6327 application, or BB804SF3E6327 equivalent, key selection criteria include verified C-V linearity (square-law), subgroup-coded capacitance tolerance (Group 3: 45–46.5 pF at 2 V), common-cathode tracking performance, ROHS-compliant SOT23 packaging, and thermal stability across −55 °C to +125 °C operating range.

Technical Context

The BB804SF3E6327 integrates two matched varactor diodes on a single die with shared cathode, ensuring identical voltage-dependent capacitance response for back-to-back tuning configurations. Its square-law C-V characteristic minimizes harmonic distortion in resonant tank circuits, while the −330 ppm/K temperature coefficient enables stable center-frequency drift control in FM IF and oscillator stages.

Rated for 18 V reverse voltage and 20 V peak, it operates up to 125 °C with <200 nA leakage at 16 V/65 °C. The 0.18 Ω typical series resistance at 100 MHz supports high-Q tank designs, and its 200 minimum Q-factor at 2 V/100 MHz confirms suitability for high-selectivity RF filtering and VCO tuning.

Key Specifications

Pinout & Package

SOT23 package with gull-wing leads, 1.3 mm body width, 2.9 mm length, and 1.15 mm height. Pin 1 = Anode 1, Pin 2 = Cathode (common), Pin 3 = Anode 2.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar varactor diode applications.

Compared with BAT117 and BBY52-02W, BB804SF3E6327 uniquely provides factory-matched dual varactors in one SOT23, subgroup-binned capacitance, and proven square-law linearity - making it irreplaceable for production-grade FM tuner architectures requiring thermal and voltage tracking.

Availability

BB804SF3E6327 is available at Aetrix Electronics and suitable for FM radio tuners, voltage-controlled oscillators, and HiFi audio PLL demodulators requiring stable component supply, consistent C-V matching, and ROHS-compliant SMT assembly.

Supply support for BB804SF3E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive ICs, and RF components, with global manufacturing and quality certification to ISO/TS 16949.

BB804SF3E6327 belongs to Infineon's RF varactor diode product line, engineered specifically for high-fidelity broadcast receiver tuning systems demanding low distortion, thermal stability, and production-grade parameter matching.

FAQ

What does the 'SF3' marking indicate on BB804SF3E6327?

The 'SF3' marking identifies the capacitance subgroup: Group 3, specifying a nominal capacitance of 45–46.5 pF at 2 V reverse bias. This binning ensures tight matching between the two integrated varactors and is laser-marked on the SOT23 package for traceability in FM tuner production lines.

Can BB804SF3E6327 be used in a single-diode configuration?

Yes - either anode (Pin 1 or Pin 3) can be used with the common cathode (Pin 2) as a standalone varactor. However, doing so forfeits the matched tracking benefit; the device is optimized for dual-diode, back-to-back operation in low-distortion tuning circuits.

Is the −330 ppm/K temperature coefficient adjustable or compensated externally?

No - the −330 ppm/K coefficient is an intrinsic material property of the silicon junction and cannot be adjusted. It is intentionally specified to offset the positive temperature coefficient of ceramic or coil components in IF filters, enabling passive thermal stabilization without active circuitry.

What is the maximum recommended RF drive level for BB804SF3E6327?

RF voltage swing should remain below 100 mV RMS at 100 MHz to avoid nonlinear conduction and maintain specified Q-factor and C-V linearity. Exceeding this level risks harmonic generation and increased phase noise in VCO applications.