Infineon Technologies BBY5302VH6327XTSA1

Overview

BBY5302VH6327XTSA1 from Infineon Technologies is a silicon hyperabrupt tuning diode optimized for VCOs in mobile communications equipment, featuring 4.8–5.8 pF capacitance at 1 V reverse bias, 1.85–3.1 pF at 3 V, and a capacitance ratio CT1/CT3 of 1.8–2.6. It operates up to 6 V reverse voltage with ≤0.47 Ω series resistance at 1 GHz and supports -55 °C to +125 °C ambient operation.

For engineers reviewing the BBY5302VH6327XTSA1 datasheet, BBY5302VH6327XTSA1 pinout, BBY5302VH6327XTSA1 application, or BBY5302VH6327XTSA1 equivalent, key selection criteria include low-voltage tuning capability (1–3 V range), high Q factor enabled by low rS, hyperabrupt C–V profile for linear frequency modulation, and SCD80 package compatibility with RF layout constraints.

Technical Context

This tuning diode implements a hyperabrupt junction profile to deliver a near-linear relationship between applied reverse voltage and oscillator output frequency-critical for phase-locked loop (PLL) tuning linearity in GSM/UMTS transceivers. Its low series resistance (0.47 Ω typ. at 1 GHz) minimizes insertion loss in resonant tank circuits.

The device exhibits a temperature coefficient of capacitance (TCC) of ±10⁻⁴ /°C at 1–3 V bias, enabling stable VCO center frequency over industrial temperature range. Capacitance variation vs. temperature is bounded to ±3.75 % across –40 °C to +100 °C at both 1 V and 3 V bias points.

Key Specifications

Pinout & Package

BBY5302VH6327XTSA1 is housed in the SCD80 (SC-79 compatible) leadless surface-mount package, measuring 1.3 mm × 0.7 mm × 0.4 mm with cathode marked by laser etch on top surface. The single-anode, common-cathode configuration is optimized for RF ground-signal routing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar tuning diode applications.

Compared with BBY5302VH6327XTSA1, BBY58-02W trades higher capacitance ratio for increased series resistance and footprint, while SMV1232-011 sacrifices low-voltage capacitance for lower rS and higher-frequency suitability-making BBY5302VH6327XTSA1 optimal for compact 800–2500 MHz mobile VCOs demanding balanced C–V linearity and Q.

Availability

BBY5302VH6327XTSA1 is available at Aetrix Electronics and suitable for GSM/EDGE transceivers, UMTS local oscillators, Bluetooth LE synthesizers, and Wi-Fi 2.4 GHz channel selection requiring stable component supply across high-mix production runs.

Supply support for BBY5302VH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in silicon RF components since the 1990s.

BBY5302VH6327XTSA1 belongs to Infineon's BBY53 hyperabrupt tuning diode family, engineered specifically for low-voltage, high-linearity VCO tuning in space-constrained mobile radio front-ends.

FAQ

What is the maximum recommended reverse voltage for continuous operation?

The BBY5302VH6327XTSA1 has a rated maximum reverse voltage (VR) of 6 V at TA = 25 °C. Operation beyond this value risks irreversible junction breakdown. Derating to 5 V is advised for designs operating above 85 °C ambient or subject to transient voltage spikes in RF matching networks.

How does the SCD80 package affect RF layout compared to SOT-23?

The SCD80 package (1.3 × 0.7 mm) offers 45 % smaller footprint and 30 % lower parasitic inductance than SOT-23, enabling tighter coupling to ground planes and reduced stub effects in 2 GHz+ VCO layouts. Its leadless construction eliminates bond wire inductance, improving high-frequency Q consistency.

Is the BBY5302VH6327XTSA1 suitable for DC-coupled tuning applications?

No-this diode must be AC-coupled in all applications. Its reverse leakage current (IR ≤ 200 nA at 4 V, 85 °C) introduces measurable bias drift over time in DC-coupled configurations, causing VCO frequency walk. A series DC-blocking capacitor (≥100 pF) is mandatory per Infineon's application note AN2011-06.

What is the typical capacitance tolerance across production lots?

Infineon specifies ±10 % capacitance tolerance at 1 V and 3 V reverse bias for BBY5302VH6327XTSA1, verified via 100 % wafer-level test. This tolerance directly impacts VCO center frequency repeatability; system-level calibration is recommended for applications requiring <±50 kHz absolute accuracy at 2.1 GHz.