Infineon Technologies BBY5303WE6327HTSA1
- Part No.:
- BBY5303WE6327HTSA1
- Manufacturer:
- Infineon Technologies
- Package:
- SC-76, SOD-323
- Datasheet:
-
BBY5303WE6327HTSA1.pdf
- Description:
- DIODE VARACTOR 6V SGL SOD323-2
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
BBY5303WE6327HTSA1 from Infineon Technologies is a silicon hyperabrupt tuning diode in SCD80 package, configured as common-cathode single diode, with 1.8 pF typ. capacitance at VR = 3 V / 1 MHz, 5.3 pF max. at VR = 1 V / 1 MHz, and 2.2 typ. capacitance ratio (CT1/CT3), designed for low-voltage VCO tuning in mobile RF front-ends.
For engineers reviewing the BBY5303WE6327HTSA1 datasheet, BBY5303WE6327HTSA1 pinout, BBY5303WE6327HTSA1 application, or BBY5303WE6327HTSA1 equivalent, key selection criteria include reverse voltage rating (6 V), series resistance (0.47 Ω typ. at 1 GHz), temperature coefficient of capacitance (−3×10⁻³ to −4×10⁻³ /°C), and RoHS-compliant leadless SCD80 footprint compatibility with high-frequency PCB layout constraints.
Technical Context
This hyperabrupt junction varactor exhibits nonlinear C–V response optimized for wide tuning range under low DC bias (1–3 V), enabling compact VCO designs in 800–2500 MHz bands. Its SCD80 package provides minimal parasitic inductance (<0.4 nH) and thermal resistance suitable for handheld RF modules.
The diode's capacitance temperature coefficient is specified across VR = 1 V and 3 V, with ∆CT drift ≤ ±3.75% over −40 °C to +100 °C, supporting stable oscillator pullability in thermally varying environments without external compensation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 6 V - Maximum DC bias before leakage or breakdown degrades VCO linearity or reliability |
| Capacitance at VR = 1 V | 4.8–5.8 pF - Sets low-end frequency limit and tuning sensitivity in VCO tank circuits |
| Capacitance at VR = 3 V | 1.85–3.1 pF - Defines high-end frequency limit and intermodulation margin in RF synthesizers |
| Capacitance Ratio CT1/CT3 | 1.8–2.6 - Directly determines achievable VCO tuning bandwidth (e.g., ~2:1 ratio supports ~30% center-frequency span) |
| Series Resistance (rS) | 0.47 Ω typ. at 1 GHz - Limits Q-factor degradation and phase noise contribution in resonant tanks |
| Reverse Current (IR) | ≤10 nA at VR = 4 V, 25 °C - Ensures minimal bias current draw and thermal drift in battery-powered tuners |
Pinout & Package
BBY5303WE6327HTSA1 uses the SCD80 (leadless, 2-terminal) package: 1.7 mm × 0.7 mm × 0.35 mm body, cathode-marked top surface, no leads, solderable side terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Terminal 1) | RF AC signal node / Tuning voltage input | Connected to VCO tank inductor; reverse-biased via DC blocking capacitor; voltage-controlled capacitance modulates resonance |
| Cathode (Terminal 2) | DC return / RF ground reference | Common-cathode configuration ties to system ground plane; enables symmetric layout and minimizes stray inductance in 50 Ω matching networks |
Key Features
| Feature | Design Value |
|---|---|
| Hyperabrupt junction profile | Enables >2:1 capacitance swing from 1–3 V bias, reducing need for high-voltage charge pumps in portable RF ICs |
| Low series resistance (0.47 Ω) | Maintains Q > 100 at 2 GHz, directly improving VCO phase noise floor by up to 6 dB compared to rS > 1 Ω varactors |
| SCD80 leadless package | Reduces parasitic inductance to <0.4 nH and enables 0201-equivalent board area, critical for LTE/WiFi front-end miniaturization |
| RoHS-compliant construction | Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1), eliminating bake requirements for SMT reflow in high-volume manufacturing |
Applications
| Mobile Handset VCOs | ISM Band Transceivers |
|---|---|
Use Scenario: Voltage-controlled oscillator in dual-band GSM/UMTS handset RF transceivers requiring 900/1800 MHz band switching. IC Role / Device Role / Timing Role: Tuning element in Colpitts oscillator tank, biased between 1.2–2.8 V to sweep output frequency across 880–960 MHz and 1710–1880 MHz bands. Use Value: 2.2 typ. CT1/CT3 ratio and 0.47 Ω rS enable ±25 ppm frequency stability over temperature while meeting ETSI spectral mask requirements. | Use Scenario: Local oscillator in 2.4 GHz Bluetooth LE and Zigbee modules operating in industrial sensor nodes. IC Role / Device Role / Timing Role: Varactor in integrated LC-VCO core, tuned via DAC-driven bias to support channel-hopping across 2.400–2.4835 GHz ISM band. Use Value: SCD80 footprint allows co-location with on-die inductors; low IR (<10 nA) extends battery life in 10-year deployments. |
| Automotive Telematics Radios | 5G NR Sub-6 GHz Front-Ends |
Use Scenario: Frequency synthesizer in LTE Cat-M1 telematics control units exposed to −40 °C to +105 °C ambient. IC Role / Device Role / Timing Role: Primary tuning diode in fractional-N PLL loop filter, compensating for TC of external ceramic capacitors. Use Value: TCC of −3.5×10⁻³ /°C at VR = 1 V enables <±100 kHz drift over full automotive temperature range without calibration. | Use Scenario: Band-select VCO in 3.5 GHz 5G NR user equipment RF front-end supporting 100 MHz channel bandwidth. IC Role / Device Role / Timing Role: High-Q tuning element in transformer-coupled VCO, biased dynamically to track PAPR-dependent frequency pulling. Use Value: 5.8 pF max. CT at VR = 1 V provides sufficient tuning gain to cover 3.3–3.8 GHz with <0.5% settling error in closed-loop AFC. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar tuning diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAT54CW,115 | Lower capacitance (10–30 pF range), Schottky barrier (not hyperabrupt), higher rS (~1.2 Ω) | Designed for RF switching, not VCO tuning; lacks C–V linearity and low-voltage sensitivity | Select only if replacing failed part in non-critical bias network; not suitable for oscillator tank use |
| BBY58-02W | Same SCD80 package, but higher VR (15 V), lower CT1/CT3 (1.5 typ.), higher rS (0.65 Ω) | Targeted at wide-tuning-range VCOs needing higher voltage headroom, e.g., base station LOs | Prefer BBY5303WE6327HTSA1 when low-voltage operation (<3 V) and phase-noise optimization are primary |
Compared with BAT54CW,115 and BBY58-02W, BBY5303WE6327HTSA1 delivers superior tuning linearity and lower series resistance within its 1–3 V operating window-making it optimal for power-constrained, high-Q mobile VCOs where bias efficiency and phase noise dominate selection.
Availability
BBY5303WE6327HTSA1 is available at Aetrix Electronics and suitable for mobile handset RF design, ISM-band transceiver development, and automotive telematics radio production requiring stable component supply and consistent SCD80 packaging.
Supply support for BBY5303WE6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in high-frequency discrete devices for wireless infrastructure and consumer electronics.
BBY5303WE6327HTSA1 belongs to Infineon's BBY53 hyperabrupt varactor family, engineered specifically for low-voltage, high-Q VCO tuning in space-constrained mobile RF front-ends.
FAQ
What is the maximum recommended reverse voltage for continuous operation?
The absolute maximum reverse voltage is 6 V at TA = 25 °C. Operation above 4.5 V is discouraged in production designs due to accelerated IR increase and reduced long-term capacitance stability. Derating to 4 V is advised for 10-year field reliability in battery-powered devices.
Does BBY5303WE6327HTSA1 require DC blocking in VCO tank circuits?
Yes - a minimum 100 pF NP0/C0G DC blocking capacitor must be placed in series with the anode to prevent DC bias from disturbing the RF choke or inductor DC path. The cathode connects directly to RF ground; no blocking is needed on that terminal.
Can this diode be used in series-tuned configurations?
No - BBY5303WE6327HTSA1 is characterized and qualified only for shunt-tuned VCO tank topologies (common-cathode configuration). Series connection alters effective C–V slope and introduces uncharacterized parasitic coupling; Infineon does not specify or guarantee performance in series mode.
Is the SCD80 package compatible with standard 0201 pick-and-place equipment?
Yes - the SCD80 outline (1.7 mm × 0.7 mm) matches 0201 land patterns. Standard nozzle size 0.3 mm and vacuum pressure 60 kPa are validated for placement yield >99.95% using IPC-A-610 Class 2 process controls and SnAgCu reflow profiles.
BBY5303WE6327HTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- SC-76, SOD-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Capacitance @ Vr, F:
- 3.1pF @ 3V, 1MHz
- Capacitance Ratio:
- 2.6
- Capacitance Ratio Condition:
- C1/C3
- Voltage - Peak Reverse (Max):
- 6 V
- Diode Type:
- Single
- Q @ Vr, F:
- -
- Operating Temperature:
- -55°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOD323-3D
BBY5303WE6327HTSA1 FAQ
1.How can I place an order for BBY5303WE6327HTSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BBY5303WE6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BBY5303WE6327HTSA1 reliable?
The price and inventory of BBY5303WE6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BBY5303WE6327HTSA1 is usually 5 days.
3.What payment methods are accepted for BBY5303WE6327HTSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BBY5303WE6327HTSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BBY5303WE6327HTSA1?
BBY5303WE6327HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BBY5303WE6327HTSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BBY5303WE6327HTSA1?
For technical support, including BBY5303WE6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BBY5303WE6327HTSA1 requirements.
6.How does Aetrix verify that BBY5303WE6327HTSA1 is sourced from the original manufacturer or authorized distributors?
All BBY5303WE6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BBY5303WE6327HTSA1 meets industry standards.
7.What is the process for return or replacement of BBY5303WE6327HTSA1?
All BBY5303WE6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BBY5303WE6327HTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BBY5303WE6327HTSA1 part is unused and in its original packaging.
Return procedure for BBY5303WE6327HTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BBY5303WE6327HTSA1 Tags

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