Infineon Technologies BBY5305WH6327XTSA1
- Part No.:
- BBY5305WH6327XTSA1
- Manufacturer:
- Infineon Technologies
- Package:
- SC-70, SOT-323
- Datasheet:
-
BBY5305WH6327XTSA1.pdf
- Description:
- DIODE TUNING 6V 20MA SOT323
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
BBY5305WH6327XTSA1 from Infineon Technologies is a silicon hyperabrupt tuning diode in SCD80 package, configured as common cathode single diode, with 1.4 pF capacitance at VR = 3 V, 2.6:1 capacitance ratio (CT1/CT3), and 0.47 Ω series resistance at 1 GHz - designed for low-voltage VCO tuning in mobile RF front-ends.
For engineers reviewing the BBY5305WH6327XTSA1 datasheet, BBY5305WH6327XTSA1 pinout, BBY5305WH6327XTSA1 application, or BBY5305WH6327XTSA1 equivalent, key selection criteria include tuning voltage range (0–6 V), temperature coefficient of capacitance (−3.75 to +3.75 % at 1 V/3 V), Q-factor suitability for 800–2500 MHz bands, and RoHS-compliant leadless SCD80 footprint compatibility.
Technical Context
This hyperabrupt junction varactor delivers nonlinear C–V response optimized for wide-range frequency tuning with minimal control voltage swing. Its CT1/CT3 ratio of 2.2 (typ.) enables >10 % frequency deviation across 1–3 V reverse bias in compact VCO topologies.
The diode's low rS (0.47 Ω typ. at 1 GHz) minimizes insertion loss in resonant tank circuits, while its TCC of ±3.75 % over −40 to +100 °C ensures stable center frequency drift in portable wireless transceivers operating under thermal stress.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 6 V - maximum DC bias before leakage or breakdown compromises VCO linearity or reliability |
| Capacitance at VR = 3 V | 1.85–2.4 pF - sets nominal tank resonance with inductor in 1.8–2.4 GHz cellular bands |
| Capacitance Ratio CT1/CT3 | 1.8–2.6 - determines achievable frequency tuning range without requiring high-voltage DACs |
| Series Resistance (rS) | 0.47 Ω (typ. @ 1 GHz) - directly limits Q-factor and phase noise degradation in oscillator loop |
| Reverse Current (IR) | ≤10 nA @ 4 V, ≤200 nA @ 4 V/85 °C - ensures low leakage-induced frequency drift and bias instability |
| Operating Temp Range | −55 to +125 °C - supports deployment in automotive infotainment and industrial handheld radios |
Pinout & Package
SCD80 - ultra-compact, leadless surface-mount package (1.3 × 0.7 × 0.35 mm), cathode-marked via laser on top surface, optimized for high-frequency layout with minimized parasitic inductance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | RF Tuning Node | Connected to LC tank node; reverse-biased during operation; requires clean DC blocking and low-inductance bias feed |
| Cathode | Common Reference | Shared ground reference for multiple diodes or direct connection to RF ground plane; marked by white dot/laser |
Key Features
| Feature | Design Value |
|---|---|
| Hyperabrupt Junction Profile | Enables steep C–V slope for wide tuning range with sub-3 V control voltage |
| Low Series Resistance | 0.47 Ω typical at 1 GHz preserves tank Q > 50 in 2.1 GHz UMTS VCO designs |
| High Capacitance Ratio | 2.2:1 (typ.) allows >15 % frequency shift across 1–3 V bias, reducing DAC resolution requirements |
| Pb-Free SCD80 Package | RoHS-compliant, 0.35 mm profile enables dense RF module layouts without reflow voiding risk |
Applications
| Cellular Handset VCOs | Bluetooth LE Transceivers |
|---|---|
Use Scenario: Voltage-controlled oscillator in dual-band GSM/UMTS handset RFIC front-end. IC Role / Device Role / Timing Role: Tuning element in Colpitts LC tank, adjusting resonance between 900 MHz and 2140 MHz. Use Value: 2.2:1 CT ratio enables full band coverage using single 0–3 V tuning rail, eliminating need for charge pump or LDO. | Use Scenario: Frequency synthesizer in Bluetooth 5.0 SoC for advertising channel hopping. IC Role / Device Role / Timing Role: Varactor in integrated VCO core, compensating for process variation across 2.402–2.480 GHz ISM band. Use Value: Low rS (0.47 Ω) maintains phase noise < −110 dBc/Hz @ 1 MHz offset, meeting BLE spectral mask requirements. |
| Wi-Fi 2.4 GHz Radios | Automotive Keyless Entry (RKE) |
Use Scenario: Channel-select VCO in 802.11n Wi-Fi transceiver IC. IC Role / Device Role / Timing Role: Primary capacitance tuning device in differential LC VCO, co-tuned with switched capacitor bank. Use Value: Stable TCC (±3.75 %) ensures < ±150 kHz center frequency drift over −40 to +85 °C, avoiding channel misalignment. | Use Scenario: Remote key fob transmitter operating at 315/433 MHz. IC Role / Device Role / Timing Role: Fine-tuning element in miniature SAW-less VCO, trimming factory-set carrier frequency. Use Value: 6 V VR rating supports battery-voltage-tolerant biasing (up to 4.2 V Li-ion), enabling direct MCU GPIO control without level-shifting. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar tuning diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BBY58-02W | Higher CT (2.7–3.3 pF @ 3 V); lower CT1/CT3 (1.9:1); same SCD80 package | Better suited for sub-1 GHz ISM bands; reduced tuning range per volt | Select when targeting 315/433 MHz RKE with higher nominal capacitance |
| SMV1232-011 | Lower rS (0.35 Ω typ.); higher VR (15 V); SOD-323 package (larger footprint) | Enables wider tuning voltage margin and lower phase noise in base station LOs | Choose for infrastructure-grade stability where board space permits larger package |
Compared with BBY5305WH6327XTSA1, BBY58-02W trades tuning linearity for higher baseline capacitance in compact form, while SMV1232-011 sacrifices size for superior RF loss and voltage headroom - making BBY5305WH6327XTSA1 optimal for cost- and space-constrained mobile handsets.
Availability
BBY5305WH6327XTSA1 is available at Aetrix Electronics and suitable for cellular handset VCOs, Bluetooth LE transceivers, and Wi-Fi 2.4 GHz radios requiring stable component supply across high-volume production cycles.
Supply support for BBY5305WH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in silicon RF components since the 1990s.
The BBY53 family belongs to Infineon's high-Q tuning diode product line, engineered specifically for low-voltage, high-linearity frequency synthesis in battery-powered mobile communication devices.
FAQ
What is the cathode marking method for BBY5305WH6327XTSA1?
The cathode is marked with a white dot or laser-etched symbol on the top surface of the SCD80 package, positioned adjacent to pin 1 (anode) per Infineon's standard SC79/SCD80 marking layout. This marking is visible under 10× magnification and aligns with JEDEC MO-252 mechanical outline requirements.
Can BBY5305WH6327XTSA1 be used in DC-coupled tuning configurations?
No - BBY5305WH6327XTSA1 must operate under reverse bias only. Forward conduction degrades junction integrity and causes irreversible capacitance drift. A series DC-blocking capacitor (≥100 pF) and bias tee network are mandatory to isolate RF path from tuning voltage source.
How does temperature affect capacitance stability in this diode?
At VR = 1 V, capacitance changes by −3.75 to +3.75 % over −40 to +100 °C; at VR = 3 V, the range is narrower (−2.25 to +2.25 %). This TCC behavior is characterized and plotted in Infineon's BBY53 datasheet Figure 3, enabling accurate thermal compensation in closed-loop VCO designs.
Is BBY5305WH6327XTSA1 compatible with lead-free reflow profiles?
Yes - the SCD80 package is qualified for standard Pb-free reflow per JEDEC J-STD-020 Rev. E, with peak temperature up to 260 °C for 30 seconds. No special prebake or moisture sensitivity handling is required (MSL Level 1).
BBY5305WH6327XTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Capacitance @ Vr, F:
- 3.1pF @ 3V, 1MHz
- Capacitance Ratio:
- 2.6
- Capacitance Ratio Condition:
- C1/C3
- Voltage - Peak Reverse (Max):
- 6 V
- Diode Type:
- 1 Pair Common Cathode
- Q @ Vr, F:
- -
- Operating Temperature:
- -55°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT323
BBY5305WH6327XTSA1 FAQ
1.How can I place an order for BBY5305WH6327XTSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BBY5305WH6327XTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BBY5305WH6327XTSA1 reliable?
The price and inventory of BBY5305WH6327XTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BBY5305WH6327XTSA1 is usually 5 days.
3.What payment methods are accepted for BBY5305WH6327XTSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BBY5305WH6327XTSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BBY5305WH6327XTSA1?
BBY5305WH6327XTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BBY5305WH6327XTSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BBY5305WH6327XTSA1?
For technical support, including BBY5305WH6327XTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BBY5305WH6327XTSA1 requirements.
6.How does Aetrix verify that BBY5305WH6327XTSA1 is sourced from the original manufacturer or authorized distributors?
All BBY5305WH6327XTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BBY5305WH6327XTSA1 meets industry standards.
7.What is the process for return or replacement of BBY5305WH6327XTSA1?
All BBY5305WH6327XTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BBY5305WH6327XTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BBY5305WH6327XTSA1 part is unused and in its original packaging.
Return procedure for BBY5305WH6327XTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BBY5305WH6327XTSA1 Tags

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BBY5702VH6327XTSA1
Infineon Technologies

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BBY5602VH6327XTSA1
Infineon Technologies

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SMV1405-040LF
Skyworks Solutions Inc.

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BBY6502VH6327XTSA1
Infineon Technologies

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BBY6602VH6327XTSA1
Infineon Technologies

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BBY5802VH6327XTSA1
Infineon Technologies
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BB175X
NXP USA Inc.

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SMV1430-040LF
Skyworks Solutions Inc.

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SMV1273-079LF
Skyworks Solutions Inc.

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SMV1255-079LF
Skyworks Solutions Inc.

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SMV1213-079LF
Skyworks Solutions Inc.

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SMV1247-079LF
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