My Inquiry
My Account
Infineon Technologies BBY5503WE6327HTSA1
- Part No.:
- BBY5503WE6327HTSA1
- Manufacturer:
- Infineon Technologies
- Package:
- SC-76, SOD-323
- Datasheet:
-
BBY5503WE6327HTSA1.pdf
- Description:
- DIODE TUNING 16V 20MA SOD-323
- Quantity:
- Payment:
- Shipping:
Inventory:14,905
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
BBY5503WE6327HTSA1 from Infineon Technologies is a hyperabrupt silicon tuning diode in SOD323 package, designed for VCO frequency control in mobile communications. It delivers 11.6–12 pF capacitance at 3–4 V reverse bias, 0.15–0.4 Ω series resistance at 470 MHz, and a 2.0–3.0 CT2/CT10 capacitance ratio, enabling precise low-voltage tuning in compact RF front-ends.
For engineers reviewing the BBY5503WE6327HTSA1 datasheet, BBY5503WE6327HTSA1 pinout, BBY5503WE6327HTSA1 application, or BBY5503WE6327HTSA1 equivalent, key selection criteria include its 16 V VR rating, -55 to +150 °C operating range, low capacitance spread (±0.5 pF typical), and RoHS-compliant Pb-free construction for high-reliability portable RF designs.
Technical Context
This hyperabrupt junction diode exhibits voltage-dependent capacitance optimized for linear frequency vs. tuning voltage response in VCOs. Its CT vs. VR curve is characterized at 1 MHz, with specified values at 1–10 V reverse bias, supporting stable oscillator design across GSM/UMTS/LTE bands.
The device achieves low rS (0.15 Ω typ. at 5 V, 470 MHz) and ultra-low IR (<3 nA at 15 V, 25°C), minimizing phase noise and power loss in high-Q resonant tank circuits used in cellular transceivers and synthesizers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 16 V - Maximum DC blocking capability without breakdown in VCO tuning path |
| Capacitance at 3 V (CT) | 11.6–12 pF - Primary tuning point for mid-band VCO operation (e.g., 1.8–2.2 GHz) |
| Capacitance Ratio (CT2/CT10) | 2.0–3.0 - Tuning range breadth enabling ≥10% frequency deviation in LC oscillators |
| Series Resistance (rS) | 0.15–0.4 Ω - Low loss at 470 MHz ensures minimal Q degradation in resonant tanks |
| Reverse Current (IR) | <3 nA @ 15 V, 25°C - Negligible leakage-induced drift in precision tuning applications |
| Operating Temp Range | -55 to +150 °C - Validated performance across automotive and industrial ambient extremes |
| Package | SOD323 - 1.7 × 1.3 mm surface-mount footprint compatible with high-density RF PCB layouts |
Pinout & Package
SOD323 package: cathode-marked, single-diode configuration; 2-terminal device with anode and cathode leads aligned per JEDEC TO-236AB outline. Cathode identified by band marking on top surface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Positive terminal under forward bias; AC ground reference in reverse-biased VCO tank | Connected to RF ground or inductor tap; defines DC return path for tuning current |
| Cathode | Negative terminal; voltage-controlled capacitive node in reverse bias | Connected to varactor node of LC tank; capacitance varies with applied tuning voltage |
Key Features
| Feature | Design Value |
|---|---|
| Hyperabrupt junction profile | Enables near-linear f-V tuning characteristic critical for PLL-based frequency synthesis |
| Low series resistance (rS) | Preserves tank Q-factor >100 at 2 GHz, reducing VCO phase noise floor |
| Low capacitance spread | ±0.5 pF unit-to-unit variation ensures consistent center frequency across production batches |
| Pb-free RoHS compliance | Meets IPC-J-STD-020 reflow profiles up to 260°C peak, supporting lead-free assembly |
| High-temperature stability | Capacitance drift <±2% from -55 to +125°C enables uncalibrated operation in outdoor base stations |
Applications
| GSM/UMTS Transceiver VCO | Wi-Fi 2.4 GHz Synthesizer |
|---|---|
Use Scenario: Local oscillator in dual-band cellular handset RF transceiver ICs. IC Role / Device Role / Timing Role: Voltage-controlled capacitor setting resonant frequency of Colpitts VCO tank. Use Value: 11.6 pF @ 3 V enables 900/1800 MHz dual-band coverage with <±50 kHz tuning linearity error. | Use Scenario: Frequency tuning element in 2.4 GHz WLAN radio synthesizer modules. IC Role / Device Role / Timing Role: Varactor diode in integrated LC-VCO core for channel selection. Use Value: CT2/CT10 = 2.5 supports 80 MHz bandwidth (2.4–2.48 GHz) with monotonic tuning slope. |
| Automotive Telematics GNSS L1 Front-End | Industrial IoT Sub-GHz ISM Band Transmitter |
Use Scenario: Temperature-stable VCO in GPS/Galileo L1-band (1575.42 MHz) receiver local oscillator. IC Role / Device Role / Timing Role: High-Q tuning diode compensating for TCXO drift in low-power tracking mode. Use Value: <±2% ∆C over -40 to +85°C eliminates need for digital calibration in cold-start acquisition. | Use Scenario: Frequency-agile transmitter in LPWAN sensor nodes operating at 868/915 MHz. IC Role / Device Role / Timing Role: Low-voltage varactor enabling battery-powered frequency hopping. Use Value: Operates down to 1 V tuning voltage, extending coin-cell lifetime by 3× vs. standard abrupt diodes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar tuning diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAT54CW-7-F | Abupt (not hyperabrupt) junction; CT2/CT10 = 1.6; rS = 0.6 Ω typ. | Narrower tuning range; higher phase noise in VCOs above 1 GHz | Acceptable for cost-sensitive 433 MHz ISM receivers where linearity is non-critical |
| SMV1232-011 | Higher CT (22 pF @ 3 V); CT2/CT10 = 3.2; rS = 0.25 Ω typ.; SOT-23 | Requires larger PCB area; better suited for UHF TV tuners than mobile handsets | Preferred when >15 pF nominal capacitance needed for sub-1 GHz VCOs with wide span |
Compared with BAT54CW-7-F and SMV1232-011, BBY5503WE6327HTSA1 offers optimal balance of linearity, low rS, and SOD323 size for 1–2.5 GHz mobile VCOs-delivering tighter frequency tolerance and lower power consumption than alternatives in space-constrained designs.
Availability
BBY5503WE6327HTSA1 is available at Aetrix Electronics and suitable for GSM/UMTS transceivers, Wi-Fi synthesizers, and automotive GNSS front-ends requiring stable component supply, tight capacitance matching, and extended temperature operation.
Supply support for BBY5503WE6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global R&D and fabrication infrastructure.
BBY5503WE6327HTSA1 belongs to Infineon's BBY55 hyperabrupt tuning diode family, engineered specifically for low-voltage, high-linearity VCO applications in battery-powered mobile communication equipment.
FAQ
What is the maximum reverse voltage rating for BBY5503WE6327HTSA1?
The absolute maximum reverse voltage (VR) is 16 V at TA = 25°C. Exceeding this value risks junction breakdown and irreversible capacitance shift. Derating is required above 25°C per the datasheet's thermal coefficient curves, with VR decreasing to ~13.5 V at 125°C ambient.
Does BBY5503WE6327HTSA1 require a series current-limiting resistor in VCO bias networks?
No external series resistor is required for reverse-bias operation since only leakage current flows (≤3 nA at 15 V). However, a 100 kΩ–1 MΩ resistor is recommended between tuning voltage source and cathode to suppress noise coupling and stabilize DC bias against PCB parasitics in high-frequency layouts.
How does BBY5503WE6327HTSA1's capacitance change with temperature?
Capacitance drift is bounded within ±2% from -55°C to +125°C at 1 V and 3 V bias, as confirmed by ∆C vs. TA plots in the datasheet. This stability eliminates need for temperature compensation circuitry in most portable RF designs operating below 2.5 GHz.
Is BBY5503WE6327HTSA1 compatible with lead-free reflow soldering processes?
Yes-its SOD323 package meets IPC-J-STD-020 moisture sensitivity level 1 and withstands peak reflow temperatures up to 260°C for 30 seconds. The Pb-free terminations are qualified for standard SnAgCu (SAC305) solder profiles without delamination or parametric shift.
BBY5503WE6327HTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- SC-76, SOD-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Capacitance @ Vr, F:
- 6.5pF @ 10V, 1MHz
- Capacitance Ratio:
- 3.0
- Capacitance Ratio Condition:
- C2/C10
- Voltage - Peak Reverse (Max):
- 16 V
- Diode Type:
- Single
- Q @ Vr, F:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOD323-3D
BBY5503WE6327HTSA1 FAQ
1.How can I place an order for BBY5503WE6327HTSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BBY5503WE6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BBY5503WE6327HTSA1 reliable?
The price and inventory of BBY5503WE6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BBY5503WE6327HTSA1 is usually 5 days.
3.What payment methods are accepted for BBY5503WE6327HTSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BBY5503WE6327HTSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BBY5503WE6327HTSA1?
BBY5503WE6327HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BBY5503WE6327HTSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BBY5503WE6327HTSA1?
For technical support, including BBY5503WE6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BBY5503WE6327HTSA1 requirements.
6.How does Aetrix verify that BBY5503WE6327HTSA1 is sourced from the original manufacturer or authorized distributors?
All BBY5503WE6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BBY5503WE6327HTSA1 meets industry standards.
7.What is the process for return or replacement of BBY5503WE6327HTSA1?
All BBY5503WE6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BBY5503WE6327HTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BBY5503WE6327HTSA1 part is unused and in its original packaging.
Return procedure for BBY5503WE6327HTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BBY5503WE6327HTSA1 Tags
-
BBY5702VH6327XTSA1
Infineon Technologies
-
BBY5602VH6327XTSA1
Infineon Technologies
-
SMV1405-040LF
Skyworks Solutions Inc.
-
BBY6502VH6327XTSA1
Infineon Technologies
-
BBY6602VH6327XTSA1
Infineon Technologies
-
BBY5802VH6327XTSA1
Infineon Technologies
.jpg)
-
BB175X
NXP USA Inc.
-
SMV1430-040LF
Skyworks Solutions Inc.
-
SMV1273-079LF
Skyworks Solutions Inc.
-
SMV1255-079LF
Skyworks Solutions Inc.
-
SMV1213-079LF
Skyworks Solutions Inc.
-
SMV1247-079LF
Skyworks Solutions Inc.
Tech Hub
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…
