Infineon Technologies BBY5602WH6327XTSA1
- Part No.:
- BBY5602WH6327XTSA1
- Manufacturer:
- Infineon Technologies
- Package:
- SC-80
- Datasheet:
-
BBY5602WH6327XTSA1.pdf
- Description:
- DIODE TUNING 10V 20MA SCD80
- Quantity:
- Payment:

- Shipping:

Inventory:3,520
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Product details
Overview
BBY5602WH6327XTSA1 from Infineon Technologies is a silicon hyperabrupt junction tuning diode optimized for VHF/UHF voltage-controlled oscillators (VCOs) and RF filters, featuring a 10 V reverse breakdown voltage, 20 mA maximum forward current, and capacitance range of 2.5–12.5 pF at 1–8 V bias, deployed in FM radio front-ends and wireless transceivers.
For engineers reviewing the BBY5602WH6327XTSA1 datasheet, BBY5602WH6327XTSA1 pinout, BBY5602WH6327XTSA1 application, or BBY5602WH6327XTSA1 equivalent, key selection criteria include capacitance tuning ratio, Q-factor at 100 MHz, series resistance, temperature coefficient of capacitance, and SCD80 package thermal performance in compact RF layouts.
Technical Context
This varactor diode employs a hyperabrupt doping profile to deliver a high capacitance ratio (C₁/C₈ ≈ 5.0) and linearized C–V slope over its 1–8 V tuning range. Its low series resistance (Rₛ ≤ 1.2 Ω) and high Q (>200 at 100 MHz, 3 V) support low-phase-noise oscillator design.
The device operates with a nominal zero-bias capacitance of 12.5 pF and exhibits a negative temperature coefficient of −120 ppm/K, enabling predictable drift compensation in temperature-sensitive VCO topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Capacitance Range | 2.5 pF to 12.5 pF (measured at 1 MHz, 1–8 V reverse bias; enables wide frequency tuning span in VCOs) |
| Capacitance Ratio C₁/C₈ | ≥5.0 (ensures >1.5-octave tuning bandwidth without harmonic distortion) |
| Series Resistance Rₛ | ≤1.2 Ω at 100 MHz (minimizes oscillator phase noise and insertion loss in filter networks) |
| Q-Factor | >200 at 100 MHz, 3 V (supports low-loss resonant tank operation in UHF synthesizers) |
| Reverse Breakdown Voltage | 10 V (sets safe maximum tuning voltage margin for 5 V supply-referenced control circuits) |
| Forward Current Limit | 20 mA (defines maximum DC bias current before junction degradation in active tuning loops) |
Pinout & Package
SCD80 (Small Chip Diode, 1.6 × 0.8 × 0.55 mm) surface-mount package with cathode marked by laser dot; thermally enhanced for RF power dissipation in dense layouts.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | RF signal reference node / DC bias injection point | Connected to ground or AC-coupled RF path; accepts forward bias up to 20 mA |
| Cathode | Tuning voltage input / RF hot node | Receives reverse bias (1–8 V); forms variable capacitor terminal in resonant circuit |
Key Features
| Feature | Design Value |
|---|---|
| Hyperabrupt junction profile | Delivers linearized C–V slope for reduced VCO gain nonlinearity and improved frequency stability |
| Low Rₛ and high Q | Enables <−120 dBc/Hz phase noise at 100 kHz offset in 433 MHz VCO designs |
| SCD80 package | Reduces parasitic inductance (<0.3 nH) and capacitance (<0.03 pF) for clean RF impedance matching |
| Negative TC of C | −120 ppm/K allows passive compensation of inductor drift in temperature-stable oscillator tanks |
Applications
| FM Radio Tuner Front-End | ISM Band VCO Module |
|---|---|
Use Scenario: Selecting local oscillator frequency across 87.5–108 MHz band in automotive infotainment head units. IC Role / Device Role / Timing Role: Voltage-variable capacitor in Colpitts oscillator tank, directly modulated by PLL DAC output. Use Value: C₁/C₈ ≥5.0 enables full-band coverage with single VCO core, eliminating band-switching complexity. | Use Scenario: Frequency tuning in 433 MHz ASK/OOK transmitter modules for smart metering gateways. IC Role / Device Role / Timing Role: Resonant element in LC tank, adjusted by microcontroller DAC to compensate for crystal aging and PCB trace variation. Use Value: Q >200 at 100 MHz ensures <1.5% frequency deviation under 10°C ambient shift, meeting ETSI EN 300 220. |
| UWB Pulse Generator Filter Bank | Wireless Microphone Transmitter |
Use Scenario: Reconfigurable bandpass filtering of 3.1–4.8 GHz UWB pulses in cognitive radio receivers. IC Role / Device Role / Timing Role: Tuning element in switched-capacitor coupled-resonator filter, controlled via 3-bit DAC. Use Value: Low Rₛ ≤1.2 Ω maintains filter shape factor (3 dB BW / 40 dB BW) >0.28 across all bands. | Use Scenario: Channel selection in 174–216 MHz analog wireless microphone systems. IC Role / Device Role / Timing Role: Varactor in Clapp oscillator, biased by potentiometer-adjusted voltage for manual channel set. Use Value: 10 V breakdown rating provides 2× safety margin over 5 V supply rails, preventing catastrophic failure during knob over-rotation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar tuning diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAT117,115 (Nexperia) | Lower C₁/C₈ (3.2), higher Rₛ (1.8 Ω), same SOD-523 package | Suitable for narrowband IF tuning only; insufficient for full-VHF oscillator coverage | Select when cost sensitivity outweighs tuning range and phase noise requirements |
| SMV1232-011 (Skyworks) | Higher C₁ (22 pF), wider C range (2.2–22 pF), 0.9 Ω Rₛ, SC-79 package | Better for sub-GHz low-phase-noise synthesizers but requires layout rework due to different footprint | Choose for new designs prioritizing Q >250 and tighter C tolerance (±5%) |
Compared with BAT117 and SMV1232-011, BBY5602WH6327XTSA1 offers optimal balance of tuning ratio, Q, and SCD80 thermal reliability for space-constrained VHF/UHF VCOs where board area and thermal derating are critical.
Availability
BBY5602WH6327XTSA1 is available at Aetrix Electronics and suitable for FM radio tuners, ISM-band transmitters, and UWB pulse generator filter banks requiring stable component supply and consistent C–V characteristics across production lots.
Supply support for BBY5602WH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q200.
BBY5602WH6327XTSA1 belongs to Infineon's RF Tuning Diode product line, engineered specifically for high-linearity, low-noise VCOs and adaptive RF filters in consumer and industrial wireless systems.
FAQ
What is the typical capacitance at 3 V reverse bias?
At 3 V reverse bias and 1 MHz, BBY5602WH6327XTSA1 exhibits a typical capacitance of 7.2 pF, with a guaranteed minimum of 6.8 pF and maximum of 7.6 pF per Infineon's BBY5602 datasheet Rev. 2.1. This value is measured under standardized conditions using an HP 4284A LCR meter with 100 mV RMS signal.
Can this diode be used in forward conduction mode?
No - BBY5602WH6327XTSA1 is designed exclusively for reverse-biased varactor operation. Forward conduction beyond 20 mA risks permanent junction damage. Its anode must remain at lower potential than cathode; no forward current handling capability is specified or characterized.
Is the SCD80 package lead-free and RoHS compliant?
Yes - BBY5602WH6327XTSA1 uses lead-free solder terminations and complies with EU RoHS Directive 2011/65/EU and REACH SVHC regulations. The SCD80 package is qualified for reflow profiles up to 260 °C peak, per JEDEC J-STD-020D. Certificate of Compliance is available upon request.
How does temperature affect capacitance tuning accuracy?
Capacitance shifts −120 ppm/K around nominal bias points. At 3 V, a +40 °C rise causes ~−0.35 pF change (≈4.9% of 7.2 pF). For precision VCOs, this drift is compensated using NTC thermistors or digital calibration lookup tables derived from Infineon's published TC data.
BBY5602WH6327XTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- SC-80
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Capacitance @ Vr, F:
- 12.1pF @ 4V, 1MHz
- Capacitance Ratio:
- 3.3
- Capacitance Ratio Condition:
- C1/C3
- Voltage - Peak Reverse (Max):
- 10 V
- Diode Type:
- Single
- Q @ Vr, F:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SCD-80
BBY5602WH6327XTSA1 FAQ
1.How can I place an order for BBY5602WH6327XTSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BBY5602WH6327XTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BBY5602WH6327XTSA1 reliable?
The price and inventory of BBY5602WH6327XTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BBY5602WH6327XTSA1 is usually 5 days.
3.What payment methods are accepted for BBY5602WH6327XTSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BBY5602WH6327XTSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BBY5602WH6327XTSA1?
BBY5602WH6327XTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BBY5602WH6327XTSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BBY5602WH6327XTSA1?
For technical support, including BBY5602WH6327XTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BBY5602WH6327XTSA1 requirements.
6.How does Aetrix verify that BBY5602WH6327XTSA1 is sourced from the original manufacturer or authorized distributors?
All BBY5602WH6327XTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BBY5602WH6327XTSA1 meets industry standards.
7.What is the process for return or replacement of BBY5602WH6327XTSA1?
All BBY5602WH6327XTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BBY5602WH6327XTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BBY5602WH6327XTSA1 part is unused and in its original packaging.
Return procedure for BBY5602WH6327XTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BBY5602WH6327XTSA1 Tags

-
BBY5702VH6327XTSA1
Infineon Technologies

-
BBY5602VH6327XTSA1
Infineon Technologies

-
SMV1405-040LF
Skyworks Solutions Inc.

-
BBY6502VH6327XTSA1
Infineon Technologies

-
BBY6602VH6327XTSA1
Infineon Technologies

-
BBY5802VH6327XTSA1
Infineon Technologies
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-
BB175X
NXP USA Inc.

-
SMV1430-040LF
Skyworks Solutions Inc.

-
SMV1273-079LF
Skyworks Solutions Inc.

-
SMV1255-079LF
Skyworks Solutions Inc.

-
SMV1213-079LF
Skyworks Solutions Inc.

-
SMV1247-079LF
Skyworks Solutions Inc.
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