Infineon Technologies BBY5806WE6327

Overview

BBY5806WE6327 from Infineon Technologies is a hyperabrupt silicon tuning diode optimized for voltage-controlled oscillators (VCOs) in mobile communications equipment, featuring 5.5 pF typical capacitance at 4 V reverse bias, 1.4 nH series inductance, and 0.25 Ω typical series resistance at 470 MHz. It supports low-voltage tuning down to 1 V and delivers excellent linearity with CT1/CT4 ratio of 3.05.

For engineers reviewing the BBY5806WE6327 datasheet, BBY5806WE6327 pinout, BBY5806WE6327 application, or BBY5806WE6327 equivalent, this diode is selected for precision frequency control in RF front-ends, TCXO/VCXO modules, and low-phase-noise synthesizers where capacitance stability over temperature and low series resistance are critical.

Technical Context

This hyperabrupt junction diode exhibits a controlled C–V profile enabling high linearity in varactor operation, with capacitance varying from 19.3 pF at 1 V to 3.8 pF at 6 V reverse bias (f = 1 MHz). Its SCD80 package integrates a single anode configuration with cathode marking and supports reflow soldering per JEDEC J-STD-020.

The device meets AEC-Q101 stress testing requirements for automotive-grade reliability and operates across –55 °C to +150 °C. Temperature coefficient of capacitance (TCC) is –3 × 10⁻³ /°C at 1 V and –4 × 10⁻³ /°C at 4 V, ensuring predictable drift in oscillator loop design.

Key Specifications

Pinout & Package

SCD80 package: 2-terminal, single-anode configuration with cathode marked by laser dot on top surface. Dimensions: 1.7 mm × 0.8 mm × 0.7 mm (L × W × H), 0.65 mm pitch, RoHS-compliant matte tin termination.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar tuning diode applications.

Compared with BAT54CW and SMV1232-011LF, BBY5806WE6327 uniquely balances hyperabrupt linearity, ultra-low rS, and miniature SCD80 size-making it optimal for space-constrained, high-frequency VCOs where tuning fidelity and thermal stability are co-prioritized.

Availability

BBY5806WE6327 is available at Aetrix Electronics and suitable for mobile handset RF front-ends, automotive radar synthesizers, and 5G NR FR1 base station local oscillators requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BBY5806WE6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in silicon-based RF components and AEC-Q101-qualified discrete devices.

BBY5806WE6327 belongs to Infineon's BBY58 hyperabrupt tuning diode product line, engineered specifically for high-linearity, low-noise frequency control in battery-powered mobile and automotive RF systems.

FAQ

What is the maximum recommended reverse voltage for continuous operation?

The absolute maximum reverse voltage is 10 V at TA = 25 °C. Derating is required above 25 °C: VR decreases linearly to 7.5 V at 150 °C per the datasheet's thermal derating curve. Exceeding VR risks junction breakdown and irreversible capacitance shift.

Does BBY5806WE6327 require special PCB layout considerations for RF performance?

Yes. Keep anode trace length <1 mm and use solid ground plane beneath cathode pad to minimize series inductance. Avoid vias in tuning path; place DC blocking capacitor ≥100 pF within 2 mm of anode. SCD80's 0.65 mm pitch demands 0.25 mm trace width and 0.15 mm spacing for 50 Ω impedance control.

Is BBY5806WE6327 suitable for use in TCXOs operating below –40 °C?

Yes. The device is rated for –55 °C storage and operation, and its normalized capacitance C(TA)/C(25°C) remains 0.95 at –30 °C (per Figure 3). Below –40 °C, capacitance decreases predictably with TCC ≈ –3.5 × 10⁻³ /°C, enabling accurate cold-temperature compensation modeling.

How does the SCD80 package compare to SOD-323 in terms of thermal resistance?

SCD80 has θJA ≈ 220 K/W (JEDEC Std. 51-2, 1-layer board), versus ~280 K/W for SOD-323 due to smaller pad area and thinner mold compound. This 22% lower thermal resistance improves power handling during transient tuning events and reduces capacitance drift under sustained bias in high-ambient environments.