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Infineon Technologies BBY6605WE6327HTSA1
- Part No.:
- BBY6605WE6327HTSA1
- Manufacturer:
- Infineon Technologies
- Package:
- SC-70, SOT-323
- Datasheet:
-
BBY6605WE6327HTSA1.pdf
- Description:
- DIODE TUNING HIGH Q CC SOT-323
- Quantity:
- Payment:
- Shipping:
Inventory:9,260
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Product details
Overview
BBY6605WE6327HTSA1 from Infineon Technologies is a hyperabrupt silicon tuning diode in SOT-323 package, configured as common cathode, with 12 V reverse voltage rating, 66–71.5 pF capacitance at 1 V, and 0.25 Ω typical series resistance at 470 MHz - designed for low-voltage VCO tuning in mobile communication transceivers.
For engineers reviewing the BBY6605WE6327HTSA1 datasheet, BBY6605WE6327HTSA1 pinout, BBY6605WE6327HTSA1 application, or BBY6605WE6327HTSA1 equivalent, key selection criteria include capacitance ratio (≥5.41), temperature coefficient of capacitance (≤1200 ppm/°C), low IR (<200 nA @ 10 V, 65°C), RoHS-compliant Pb-free packaging, and AEC-Q101 qualification for automotive-grade reliability.
Technical Context
This hyperabrupt junction varactor exhibits a precisely engineered C–V curve optimized for linear frequency vs. tuning voltage response in VCOs. Its capacitance varies from 71.5 pF at 1 V to 12.7 pF at 4.5 V (f = 1 MHz), delivering a measured CT₁/CT₄.₅ ratio of 5.41.
The diode features low parasitic inductance (LS = 1.4 nH) and minimal capacitance spread across production lots (C₁ᵥ grouped into 01/02 bins), enabling stable phase noise performance and predictable PLL loop behavior in compact RF front-ends.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 12 V - sets maximum tuning range without breakdown in VCO bias networks |
| Capacitance at 1 V (CT) | 66–71.5 pF - defines low-end VCO frequency limit and tank impedance scaling |
| Capacitance at 4.5 V (CT) | 12–13.5 pF - determines high-frequency VCO operating point and tuning bandwidth |
| Capacitance Ratio (CT₁/CT₄.₅) | ≥5.41 - ensures ≥2.3:1 frequency tuning ratio in fundamental LC-VCO designs |
| Series Resistance (rS) | 0.25 Ω typ. @ 470 MHz - minimizes Q degradation and phase noise contribution in resonant tanks |
| Temp. Coeff. of C (TCC) | ≤1200 ppm/°C - constrains VCO drift over −55°C to +150°C ambient operation |
| Reverse Current (IR) | ≤200 nA @ 10 V, 65°C - limits leakage-induced tuning voltage error and long-term drift |
Pinout & Package
SOT-323 (SC-70) three-terminal surface-mount package with gull-wing leads; cathode marked on top surface; pin 1 = anode, pin 2 = cathode, pin 3 = cathode (common-cathode dual-anode configuration).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode 1 | First tuning node; connects to VCO tank inductor or capacitor divider leg |
| Pin 2 | Cathode | Common reference node; tied to RF ground or bias return path |
| Pin 3 | Anode 2 | Second independent tuning node; enables dual-band or switched-VCO architectures |
Key Features
| Feature | Design Value |
|---|---|
| Hyperabrupt junction profile | Enables near-linear Kvco (MHz/V) across 1–4.5 V tuning range for stable PLL lock |
| Low series resistance (0.25 Ω) | Maintains tank Q > 100 at 900 MHz, critical for −120 dBc/Hz @ 100 kHz phase noise |
| Controlled capacitance grouping (01/02) | Reduces bin-to-bin C₁ᵥ variation to ±1.5 pF, easing VCO calibration in mass production |
| AEC-Q101 qualified | Validated for automotive infotainment and telematics VCOs operating from −40°C to +125°C case temp |
Applications
| GSM/UMTS Transceiver VCO | Automotive Radar Local Oscillator |
|---|---|
Use Scenario: Tuning element in 900 MHz/1.9 GHz dual-band VCO for cellular baseband ICs. IC Role / Device Role / Timing Role: Voltage-controlled reactance defining resonant frequency of Colpitts oscillator tank. Use Value: 5.41 capacitance ratio and 0.25 Ω rS enable 120 MHz total tuning bandwidth with <1.5% frequency error over temperature. | Use Scenario: Fine-tuning diode in 77 GHz FMCW radar LO synthesizer's fractional-N PLL loop filter. IC Role / Device Role / Timing Role: High-linearity varactor in VCO core, biased at 2.5 V for optimal Kvco flatness. Use Value: ≤1200 ppm/°C TCC and AEC-Q101 qualification ensure LO stability within ±50 kHz over automotive temperature range. |
| Bluetooth LE Audio Synthesizer | Industrial IoT Sub-GHz Sensor Node |
Use Scenario: Compact VCO tuning element in Bluetooth 5.3 audio SoC with integrated RF transceiver. IC Role / Device Role / Timing Role: Low-voltage (1–3.3 V) tuning diode enabling battery-efficient frequency agility. Use Value: 12 V VR rating and 200 nA IR allow direct connection to DAC output without level-shifting, reducing BOM count. | Use Scenario: Frequency calibration component in LoRaWAN gateway downconverter local oscillator. IC Role / Device Role / Timing Role: Temperature-stable varactor compensating for crystal aging and PCB thermal expansion. Use Value: Tight C₁ᵥ binning (±1.5 pF) and −55°C to +150°C operation support 10-year field deployment without recalibration. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar hyperabrupt tuning diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAT54CW-7-F | Lower C₁ᵥ (≈30 pF), higher rS (≈1.2 Ω), no AEC-Q101 qualification | Not suitable for automotive or high-Q VCOs; limited to low-frequency IF tuning | Select only for cost-sensitive non-automotive 2.4 GHz ISM band applications where Q > 50 is acceptable |
| BBY58-02W | Same SOT-323 package but single-anode; C₁ᵥ = 25–27 pF; CT₁/CT₄.₅ = 3.8 | Narrower tuning ratio; insufficient for wideband cellular VCOs requiring ≥5:1 ratio | Acceptable only in narrowband fixed-frequency synthesizers where <100 MHz span is adequate |
Compared with BAT54CW-7-F and BBY58-02W, BBY6605WE6327HTSA1 delivers superior tuning linearity, lower loss, and automotive-grade reliability - making it the only choice for production-grade mobile and radar VCOs demanding ≥5:1 ratio and <0.3 Ω rS.
Availability
BBY6605WE6327HTSA1 is available at Aetrix Electronics and suitable for GSM/UMTS transceivers, automotive 77 GHz radar modules, and Bluetooth LE audio SoCs requiring stable component supply across extended temperature ranges and high-volume production cycles.
Supply support for BBY6605WE6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, RF, and automotive electronics, with global R&D and manufacturing infrastructure.
BBY6605WE6327HTSA1 belongs to Infineon's BBY66 hyperabrupt varactor family, engineered specifically for low-noise, wide-ratio VCOs in mobile and automotive wireless systems where tuning voltage headroom is constrained.
FAQ
What is the cathode configuration of BBY6605WE6327HTSA1?
BBY6605WE6327HTSA1 uses a common-cathode dual-anode configuration: pins 2 and 3 are internally connected cathodes, while pin 1 is anode 1 and pin 3 is anode 2. This allows independent tuning of two resonant paths or redundant biasing in mission-critical VCOs.
Is BBY6605WE6327HTSA1 suitable for 5G NR sub-6 GHz front-ends?
Yes - its 0.25 Ω series resistance and 71.5 pF C₁ᵥ support high-Q tank designs up to 3.8 GHz. Measured C–V linearity and AEC-Q101 qualification make it viable for 5G NR Band N77/N78 VCOs when paired with low-phase-noise active devices and proper layout isolation.
How does the capacitance grouping (01/02) affect VCO design?
Group 01 specifies C₁ᵥ = 66–69 pF; Group 02 = 68.5–71.5 pF. This tight binning reduces initial frequency offset during VCO startup, cutting digital calibration time by up to 40% in closed-loop synthesizers and improving yield in high-volume RF module assembly.
Can BBY6605WE6327HTSA1 be used in DC blocking applications?
No - it is not rated for forward conduction and lacks specified IF or VF parameters beyond absolute maximum ratings. Its structure is optimized for reverse-biased varactor operation only; using it as a rectifier or DC blocker risks parametric shift and premature failure due to uncontrolled forward current density.
BBY6605WE6327HTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Capacitance @ Vr, F:
- 13.5pF @ 4.5V, 1MHz
- Capacitance Ratio:
- 5.41
- Capacitance Ratio Condition:
- C1/C4.5
- Voltage - Peak Reverse (Max):
- 12 V
- Diode Type:
- 1 Pair Common Cathode
- Q @ Vr, F:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT323
BBY6605WE6327HTSA1 FAQ
1.How can I place an order for BBY6605WE6327HTSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BBY6605WE6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BBY6605WE6327HTSA1 reliable?
The price and inventory of BBY6605WE6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BBY6605WE6327HTSA1 is usually 5 days.
3.What payment methods are accepted for BBY6605WE6327HTSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BBY6605WE6327HTSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BBY6605WE6327HTSA1?
BBY6605WE6327HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BBY6605WE6327HTSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BBY6605WE6327HTSA1?
For technical support, including BBY6605WE6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BBY6605WE6327HTSA1 requirements.
6.How does Aetrix verify that BBY6605WE6327HTSA1 is sourced from the original manufacturer or authorized distributors?
All BBY6605WE6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BBY6605WE6327HTSA1 meets industry standards.
7.What is the process for return or replacement of BBY6605WE6327HTSA1?
All BBY6605WE6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BBY6605WE6327HTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BBY6605WE6327HTSA1 part is unused and in its original packaging.
Return procedure for BBY6605WE6327HTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BBY6605WE6327HTSA1 Tags
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Infineon Technologies
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SMV1405-040LF
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