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Infineon Technologies BC858AE6327HTSA1

Part No.:
BC858AE6327HTSA1
Manufacturer:
Infineon Technologies
Category:
Single Bipolar Transistors
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixBC858AE6327HTSA1.pdf
Description:
TRANS PNP 30V 0.1A PG-SOT23
Quantity:
Payment:
Payment
Shipping:
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Inventory:7,921

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Product details

Overview

BC858AE6327HTSA1 from Infineon Technologies is a PNP silicon small-signal transistor designed for audio-frequency input stages and driver circuits. It delivers high DC current gain (hFE = 125–220 at IC = 10 µA), low VCE(sat) (max 250 mV at IC = 10 mA/IB = 0.5 mA), and low noise (1 dB typical at 1 kHz, 0.2 mA). It is RoHS-compliant, AEC-Q101 qualified, and housed in SOT23 package.

For engineers reviewing the BC858AE6327HTSA1 datasheet, BC858AE6327HTSA1 pinout, BC858AE6327HTSA1 application, or BC858AE6327HTSA1 equivalent, key selection criteria include VCEO = 30 V, hFE group A specification, thermal resistance RthJS ≤ 240 K/W, and suitability for low-noise AF amplification and switching in space-constrained PCBs.

Technical Context

This PNP transistor operates with emitter-base forward bias and collector-base reverse bias in common-emitter configuration. Its design emphasizes stable hFE across IC = 10 µA to 2 mA, low VBE(sat) (700–850 mV), and minimal capacitance (Ccb = 1.5 pF typ, Ceb = 8 pF typ) to support wideband AF performance up to 250 MHz fT.

It is thermally rated for Tj = 150 °C and supports pulsed operation with duty cycle-dependent derating. The SOT23 package enables surface-mount integration in automotive front-end modules and industrial sensor signal conditioning where AEC-Q101 compliance and low-noise gain are required.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO30 V - Maximum collector-emitter voltage before breakdown under open-base condition; defines safe operating range in linear amplifier and switch applications.
hFE (IC = 10 µA)125–220 - Group A DC current gain ensures predictable base drive requirements for low-current bias networks in preamplifier stages.
VCE(sat)250 mV max at IC = 10 mA/IB = 0.5 mA - Enables efficient switching with minimal conduction loss in discrete logic-level driver circuits.
fT250 MHz typ at IC = 20 mA/VCE = 5 V - Supports stable gain and phase margin in AF amplifiers up to 15 kHz with margin for transient response.
Noise Figure1 dB typ at IC = 0.2 mA/VCE = 5 V/f = 1 kHz - Meets low-noise requirements for microphone preamps and sensor interface front-ends.
RthJS≤ 240 K/W - Thermal resistance from junction to soldering point enables reliable operation at Ptot = 330 mW with board-level copper heatsinking.

Pinout & Package

BC858AE6327HTSA1 is supplied in the standard SOT23 (TO-236AB) plastic package, measuring 2.9 × 1.3 × 1.0 mm, with gull-wing leads for reflow-compatible surface mounting.

Pin/TerminalCircuit RoleDesign Meaning
1 (Emitter)Emitter terminalCurrent sink node in PNP configuration; connects to higher-potential rail in common-emitter amplifier or switch.
2 (Base)Control inputReceives forward-biased current to modulate collector current; requires series resistor for stable biasing in linear operation.
3 (Collector)Output current pathDelivers amplified/sinked current to load; reverse-biased relative to base during active operation.

Key Features

FeatureDesign Value
AEC-Q101 qualificationValidated for automotive electronics use including engine control, body electronics, and infotainment power management.
Low VCE(sat)Reduces power dissipation in saturated switching mode, enabling compact thermal design in space-limited driver stages.
Group A hFE binningGuarantees consistent current gain across production lots, simplifying analog circuit calibration and reducing test overhead.
RoHS-compliant packagingLead-free SOT23 construction meets global environmental regulations without compromising solderability or reliability.

Applications

Automotive Cabin Microphone PreampIndustrial Temperature Sensor Signal Conditioning

Use Scenario: Amplifies weak AC-coupled signals from MEMS microphones in vehicle cabin voice recognition systems.

IC Role / Device Role / Timing Role: PNP small-signal amplifier in first-stage common-emitter topology with DC bias network.

Use Value: Low 1 dB noise figure and stable hFE ensure high SNR and repeatable gain across temperature (−40 °C to +125 °C).

Use Scenario: Buffers and level-shifts output of analog temperature sensors (e.g., PT100 bridge interfaces) before ADC sampling.

IC Role / Device Role / Timing Role: Discrete emitter-follower buffer providing low-output-impedance drive to 12-bit SAR ADC inputs.

Use Value: VCE(sat) ≤ 250 mV minimizes offset error; AEC-Q101 rating ensures long-term stability in harsh industrial environments.

LED Driver for Dashboard IndicatorsLow-Power Logic-Level Inverter

Use Scenario: Sinks current for red/green indicator LEDs on automotive instrument clusters with 5 V supply rails.

IC Role / Device Role / Timing Role: Saturated PNP switch controlling LED anode connection via collector-emitter path.

Use Value: 100 mA IC rating and 250 mV VCE(sat) enable efficient driving of multiple parallel LEDs with minimal heat rise.

Use Scenario: Inverts TTL/CMOS logic signals in legacy control boards where gate ICs are unavailable or cost-prohibitive.

IC Role / Device Role / Timing Role: Discrete inverter stage using common-emitter configuration with pull-up resistor.

Use Value: fT = 250 MHz ensures sub-10 ns propagation delay at 3.3 V, supporting 10 MHz digital control timing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP small-signal transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
BC858B E6327Higher hFE bin (220–420 at IC = 10 µA); identical VCEO, VCE(sat), and package.Suitable where tighter gain tolerance or higher current drive at low IC is needed, e.g., precision bias networks.Select when circuit gain stability at microamp bias currents is critical; verify base resistor values for new hFE range.
MMBT858LT1GSame VCEO (30 V), but lower hFE min (100), higher VCE(sat) (300 mV max), and different RthJS (300 K/W).Better suited for general-purpose switching than low-noise amplification due to higher noise and saturation voltage.Prefer for cost-sensitive non-audio applications where AEC-Q101 is not required and thermal margin is available.

Compared with BC858AE6327HTSA1, BC858B offers higher gain consistency for analog biasing, while MMBT858LT1G trades noise and thermal performance for broader commercial availability-making the original optimal for AEC-Q101–mandated, low-noise AF signal paths.

Availability

BC858AE6327HTSA1 is available at Aetrix Electronics and suitable for automotive cabin electronics, industrial sensor interfaces, and LED driver modules requiring stable component supply, AEC-Q101 compliance, and low-noise discrete transistor performance.

Supply support for BC858AE6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discretes.

BC858AE6327HTSA1 belongs to Infineon's BC856–BC860 family of AEC-Q101 qualified PNP transistors, engineered specifically for high-reliability audio-frequency amplification and driver functions in automotive and industrial environments.

FAQ

Is BC858AE6327HTSA1 pin-compatible with BC847A?

No. BC858AE6327HTSA1 is a PNP transistor with emitter-base-collector pinout (1-E, 2-B, 3-C) in SOT23, while BC847A is an NPN device with collector-base-emitter order (1-C, 2-B, 3-E). Swapping them without circuit redesign causes polarity inversion and functional failure.

What is the maximum continuous collector current at 100 °C ambient?

At TA = 100 °C, derating applies: Ptot drops to ~180 mW (from 330 mW at TS ≤ 71 °C), limiting IC to approximately 60 mA for VCE = 3 V operation. Full 100 mA rating is only valid at TS ≤ 71 °C with adequate PCB copper area.

Does BC858AE6327HTSA1 support pulsed operation beyond its DC ratings?

Yes. With pulse width tp ≤ 100 µs and duty cycle D ≤ 2%, peak collector current can reach 200 mA per datasheet limit. Thermal performance depends on RthJS and PCB layout; refer to Fig. EHP00377 for permissible Ptot(max)/Ptot(DC) vs. tp.

Can this transistor be used in RF matching networks above 10 MHz?

Not recommended. While fT = 250 MHz suggests RF capability, its Ccb = 1.5 pF and Ceb = 8 pF introduce significant parasitic reactance above 10 MHz. It is characterized and optimized for AF applications (≤15 kHz), not impedance-matching or oscillator circuits.

BC858AE6327HTSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Last Time Buy
Transistor Type:
PNP
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
30 V
Vce Saturation (Max) @ Ib, Ic:
650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):
15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
125 @ 2mA, 5V
Power - Max:
330 mW
Frequency - Transition:
250MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-SOT23

BC858AE6327HTSA1 FAQ

1.How can I place an order for BC858AE6327HTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BC858AE6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BC858AE6327HTSA1 reliable?

The price and inventory of BC858AE6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC858AE6327HTSA1 is usually 5 days.

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BC858AE6327HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BC858AE6327HTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BC858AE6327HTSA1?

For technical support, including BC858AE6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC858AE6327HTSA1 requirements.

6.How does Aetrix verify that BC858AE6327HTSA1 is sourced from the original manufacturer or authorized distributors?

All BC858AE6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC858AE6327HTSA1 meets industry standards.

7.What is the process for return or replacement of BC858AE6327HTSA1?

All BC858AE6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BC858AE6327HTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BC858AE6327HTSA1 part is unused and in its original packaging.

Return procedure for BC858AE6327HTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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