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Infineon Technologies BC858BWE6327
- Part No.:
- BC858BWE6327
- Manufacturer:
- Infineon Technologies
- Category:
- Single Bipolar Transistors
- Package:
- SC-70, SOT-323
- Datasheet:
-
BC858BWE6327.pdf
- Description:
- TRANS PNP 30V 0.1A PG-SOT323-3-1
- Quantity:
- Payment:
- Shipping:
Inventory:54,000
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Product details
Overview
BC858BWE6327 from Infineon Technologies is a PNP silicon small-signal transistor designed for audio-frequency input stages and driver circuits. It delivers hFE = 220–480 (at IC = 2 mA), VCEO = 30 V, VCE(sat) ≤ 300 mV (IC = 10 mA, IB = 0.5 mA), fT = 250 MHz, and operates with low noise (F = 1–4 dB at 1 kHz). It is used in bias-stable amplifier front-ends for industrial sensor signal conditioning.
For engineers reviewing the BC858BWE6327 datasheet, BC858BWE6327 pinout, BC858BWE6327 application, or BC858BWE6327 equivalent, key selection criteria include guaranteed hFE group B performance, SOT323 package thermal resistance (RthJS ≤ 105 K/W), AEC-Q101 qualification status, and complementary pairing with BC848B for push-pull configurations.
Technical Context
This PNP transistor uses epitaxial planar technology to achieve high current gain linearity across IC = 10 µA to 100 mA and stable VCE(sat) below 650 mV at IC = 100 mA. Its fT = 250 MHz enables use in wideband preamplifier stages up to ~10 MHz.
The device features low Ccb = 1.5 pF and Ceb = 8 pF, supporting high-input-impedance designs. Its noise figure of 1–4 dB at 1 kHz (IC = 0.2 mA) and VBE(ON) = 650–820 mV (IC = 10 mA) make it suitable for low-level analog signal amplification where base drive efficiency matters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 30 V - Maximum collector-emitter voltage before breakdown; sets safe operating range for 24 V rail applications. |
| hFE (IC = 2 mA) | 220–480 - Guaranteed DC current gain group B; ensures predictable bias point stability in Class-A amplifiers. |
| VCE(sat) | ≤300 mV @ IC/IB = 10/0.5 mA - Low saturation voltage reduces power loss in switching and active-load applications. |
| fT | 250 MHz - Transition frequency supports wideband small-signal amplification up to ~10 MHz with usable gain. |
| Ccb | 1.5 pF - Low collector-base capacitance minimizes Miller effect and improves high-frequency stability. |
| Package | SOT323 - Surface-mount 3-pin package with RthJS ≤ 105 K/W; enables compact layout and moderate power dissipation (Ptot = 250 mW). |
Pinout & Package
SOT323 package: 3-pin plastic surface-mount package with gull-wing leads, 1.3 mm × 1.9 mm footprint, and 0.65 mm pitch. Pin 1 = Emitter, Pin 2 = Base, Pin 3 = Collector.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Emitter) | Current sink terminal for PNP operation | Connected to higher potential node (e.g., VCC); defines reference for base drive and current sourcing path. |
| 2 (Base) | Control electrode for minority-carrier injection | Requires ~650–820 mV forward bias; controls collector current with hFE-dependent base current scaling. |
| 3 (Collector) | Output current terminal | Connected to load or next stage; voltage swing limited by VCEO = 30 V and saturation behavior. |
Key Features
| Feature | Design Value |
|---|---|
| Low-noise amplification | F = 1–4 dB at 1 kHz (IC = 0.2 mA) - Enables high-SNR signal conditioning in sensor front-ends. |
| AEC-Q101 qualified | Qualified per AEC-Q101 Rev D - Supports automotive-grade reliability requirements for under-hood and body electronics. |
| Complementary NPN pairing | Matched with BC848B - Enables symmetrical push-pull output stages without gain mismatch or thermal drift penalties. |
| Pb-free & RoHS compliant | Lead-free terminations and halogen-free molding compound - Meets global environmental compliance mandates for industrial and consumer products. |
Applications
| Industrial Sensor Amplifier | Automotive Door Module Driver |
|---|---|
|
Use Scenario: Amplifying low-level thermistor or RTD bridge outputs in programmable logic controller (PLC) analog input modules. IC Role / Device Role / Timing Role: PNP common-emitter preamplifier providing 20–40 dB voltage gain with DC-coupled bias network. Use Value: hFE group B guarantees consistent gain across production lots, reducing calibration overhead in factory test. |
Use Scenario: Driving LED indicators and small solenoid loads in vehicle door control units (DCUs) with 12 V battery supply. IC Role / Device Role / Timing Role: Switching transistor in active-low driver configuration, sinking load current to ground. Use Value: VCE(sat) ≤ 300 mV minimizes heat generation during continuous 50 mA LED drive, extending PCB lifetime. |
| Audio Input Stage | Power Supply Error Amplifier |
|
Use Scenario: First-stage gain block in portable microphone preamplifiers with single-supply 3.3 V operation. IC Role / Device Role / Timing Role: High-input-impedance common-collector buffer with emitter-follower topology. Use Value: Low Ceb = 8 pF preserves bandwidth when driving 10 kΩ feedback networks, avoiding phase margin loss. |
Use Scenario: Error amplifier in isolated DC-DC converter feedback loop, comparing secondary-side voltage to reference. IC Role / Device Role / Timing Role: Transconductance amplifier converting voltage error into optocoupler LED drive current. Use Value: Stable hFE over temperature (−40°C to +125°C) maintains loop gain accuracy across full operating range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP small-signal transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC858BW | Same die, SOT323 package, but not AEC-Q101 qualified | Acceptable for non-automotive industrial use; lacks stress-test validation for automotive environments | Select when AEC-Q101 is not required and cost sensitivity outweighs qualification needs. |
| MMBT3906LT1G | hFE = 100–300 (IC = 10 mA); VCEO = 40 V; RthJS = 200 K/W (SOT23) | Higher VCEO but lower fT (250 MHz → typ. 100 MHz); less suitable for wideband audio | Prefer for general-purpose switching where voltage margin > frequency response; avoid in low-noise AF stages. |
Compared with BC858BW and MMBT3906LT1G, BC858BWE6327 uniquely combines AEC-Q101 qualification, SOT323 thermal performance (RthJS ≤ 105 K/W), and guaranteed hFE group B-making it optimal for automotive and precision industrial amplifiers requiring lot-to-lot consistency and thermal robustness.
Availability
BC858BWE6327 is available at Aetrix Electronics and suitable for industrial sensor signal conditioning, automotive body electronics, and audio front-end design requiring stable component supply and long-term manufacturability.
Supply support for BC858BWE6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification infrastructure.
BC858BWE6327 belongs to Infineon's BC857–BC860 family of general-purpose PNP transistors engineered for high-reliability analog signal amplification and switching in space-constrained, thermally demanding applications.
FAQ
Is BC858BWE6327 pin-compatible with BC848B?
No-BC858BWE6327 is PNP while BC848B is NPN; they share identical SOT323 pinout (E-B-C), enabling mechanical compatibility in complementary pair layouts, but polarity reversal requires circuit-level redesign of bias networks and signal paths.
What is the maximum junction temperature and how does it affect derating?
The absolute maximum junction temperature is 150°C. With RthJS ≤ 105 K/W and Ptot = 250 mW at TS = 124°C, power must be linearly derated above 124°C at 2.38 mW/°C to maintain Tj ≤ 150°C-critical for sealed enclosure deployments.
Does BC858BWE6327 support pulsed operation beyond its DC ratings?
Yes-permissible pulse load ratio Ptot(max)/Ptot(DC) reaches 2.5× for tp ≤ 10 ms (duty cycle ≤ 2%), enabling short-duration surge current handling up to 200 mA without exceeding thermal limits, provided average power remains within 250 mW.
How does the noise performance compare between BC858B and BC859C variants?
BC858B specifies F = 1–4 dB at 1 kHz (IC = 0.2 mA), while BC859C achieves F = 1–3 dB under identical conditions-offering marginally lower noise but with reduced VCEO (20 V vs. 30 V) and narrower hFE range, limiting dynamic range in high-gain stages.
BC858BWE6327 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Bulk
- Product Status:
- Active
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 100 mA
- Voltage - Collector Emitter Breakdown (Max):
- 30 V
- Vce Saturation (Max) @ Ib, Ic:
- 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max):
- 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 220 @ 2mA, 5V
- Power - Max:
- 250 mW
- Frequency - Transition:
- 250MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT323-3-1
BC858BWE6327 FAQ
1.How can I place an order for BC858BWE6327 through Aetrix?
Please submit a Request for Quotation (RFQ) for BC858BWE6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BC858BWE6327 reliable?
The price and inventory of BC858BWE6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC858BWE6327 is usually 5 days.
3.What payment methods are accepted for BC858BWE6327?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BC858BWE6327 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BC858BWE6327?
BC858BWE6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BC858BWE6327 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BC858BWE6327?
For technical support, including BC858BWE6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC858BWE6327 requirements.
6.How does Aetrix verify that BC858BWE6327 is sourced from the original manufacturer or authorized distributors?
All BC858BWE6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC858BWE6327 meets industry standards.
7.What is the process for return or replacement of BC858BWE6327?
All BC858BWE6327 units undergo pre-shipment inspection (PSI). If there is an issue with BC858BWE6327, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BC858BWE6327 part is unused and in its original packaging.
Return procedure for BC858BWE6327:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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