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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Infineon Technologies BC858BWE6327HTSA1

Name: BC858BWE6327HTSA1
Brand: Infineon Technologies
SKU: BC858BWE6327HTSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BC858BWE6327HTSA1

Manufacturer:: Infineon Technologies

Category:: Single Bipolar Transistors

Package:: SC-70, SOT-323

Datasheet:: BC858BWE6327HTSA1.pdf

Description:: TRANS PNP 30V 0.1A PG-SOT323

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BC858BWE6327HTSA1 from Infineon Technologies is a PNP silicon small-signal transistor designed for audio-frequency input stages and driver circuits. It delivers h_FE = 220–480 (at I_C = 2 mA), V_CEO = 30 V, V_CE(sat) ≤ 300 mV (I_C = 10 mA, I_B = 0.5 mA), and f_T = 250 MHz - enabling low-noise amplification in compact analog signal chains.

For engineers reviewing the BC858BWE6327HTSA1 datasheet, BC858BWE6327HTSA1 pinout, BC858BWE6327HTSA1 application, or BC858BWE6327HTSA1 equivalent, key selection criteria include guaranteed h_FE group B performance, SOT-323 package thermal resistance (R_thJS ≤ 105 K/W), AEC-Q101 qualification, and complementary NPN pairing with BC848B.

Technical Context

This PNP transistor operates in linear amplification and switching modes with verified DC current gain stability across I_C = 10 µA to 100 mA and V_CE = 1–5 V. Its low V_CE(sat) and high f_T support efficient Class-A preamplifier stages and fast-switching load control in space-constrained PCBs.

Designed for automotive-grade reliability, it meets AEC-Q101 stress testing requirements and features Pb-free RoHS-compliant packaging. The device exhibits low noise (F = 1–4 dB at 1 kHz) and stable h_FE grouping - critical for matched-pair differential inputs and emitter-follower buffers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	30 V - Maximum safe collector-emitter voltage before breakdown in common-emitter configuration.
h_FE (I_C = 2 mA)	220–480 - Guaranteed DC current gain range for group B, enabling predictable biasing in amplifier feedback networks.
V_CE(sat)	≤300 mV @ I_C = 10 mA, I_B = 0.5 mA - Low saturation voltage minimizes power loss in switching applications.
f_T	250 MHz - Transition frequency supports stable gain up to mid-VHF, suitable for RF-coupled AF stages.
R_thJS	≤105 K/W - Junction-to-soldering-point thermal resistance enables reliable operation at T_S ≤ 124 °C in SOT-323 layout.
Noise Figure	1–4 dB @ I_C = 0.2 mA, f = 1 kHz - Confirmed low-noise performance for sensitive microphone preamp inputs.

Pinout & Package

BC858BWE6327HTSA1 is housed in a RoHS-compliant SOT-323 (SC-70) plastic surface-mount package with standard 3-pin configuration and 0.65 mm pitch.

Pin/Terminal	Circuit Role	Design Meaning
1 (Base)	Current-controlled input terminal	Accepts base drive current to modulate collector current; requires series resistor for stable biasing in linear mode.
2 (Emitter)	Common reference terminal	Connected to higher potential in PNP operation; serves as return path for emitter current and thermal reference point.
3 (Collector)	Output current terminal	Delivers amplified or switched current to load; polarity reversed vs. NPN - sinks current when active.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive electronics per stress test requirements - supports under-hood and infotainment module deployment.
Low V_CE(sat)	250–300 mV ensures <1% voltage drop across transistor in saturated switching, reducing heat generation in driver stages.
Group B h_FE binning	220–480 range at I_C = 2 mA enables consistent gain matching without post-manufacture sorting.
Low-noise AF operation	F = 1–4 dB at 1 kHz confirms suitability for microphone preamps and audio line drivers where SNR > 60 dB is required.

Applications

Automotive Cabin Microphone Preamp

Industrial Sensor Signal Conditioning

Use Scenario: Amplifying weak electret microphone output in vehicle voice recognition modules.

IC Role / Device Role / Timing Role: PNP emitter-follower buffer providing high-input impedance and low-output impedance interface.

Use Value: Low noise (1–4 dB) and stable h_FE ensure consistent gain across temperature (-40°C to +125°C) and unit-to-unit variation.

Use Scenario: Converting 4–20 mA sensor loop signals to voltage for ADC input in PLC analog input cards.

IC Role / Device Role / Timing Role: PNP current mirror component enabling precise current-to-voltage conversion with minimal offset drift.

Use Value: V_CE(sat) ≤ 300 mV limits headroom loss, preserving dynamic range across full 20 mA span.

Consumer Audio Line Driver

LED Backlight Dimming Control

Use Scenario: Driving 600 Ω balanced audio lines from DAC outputs in portable media players.

IC Role / Device Role / Timing Role: Class-A common-collector amplifier delivering low-distortion output with rail-to-rail swing capability.

Use Value: f_T = 250 MHz ensures flat frequency response up to 20 kHz with <0.1% THD+N at 1 V_PP.

Use Scenario: PWM-controlled current sink for white LED strings in LCD display backlight units.

IC Role / Device Role / Timing Role: High-speed PNP switch operating at 1–5 kHz PWM frequencies with fast turn-off due to low C_cb (1.5 pF).

Use Value: R_thJS ≤ 105 K/W allows continuous 100 mA operation within thermal limits on 2-layer FR4 PCBs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP small-signal transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BC857BWE6327HTSA1	V_CEO = 45 V, h_FE = 200–475, R_thJS ≤ 105 K/W, same SOT-323 package	Higher breakdown margin suits 24 V industrial bus interfaces; identical pinout and footprint	Select when system supply exceeds 30 V or transient immunity >45 V is required.
MMBT3906LT1G	V_CEO = 40 V, h_FE = 100–300 (min–max), R_thJS ≈ 200 K/W, SOT-23 package	Lower gain consistency and higher thermal resistance limit use in high-density or high-temp environments	Acceptable for cost-sensitive consumer designs where AEC-Q101 is not mandated and layout allows larger thermal pad.

Compared with BC857BWE6327HTSA1, BC858BWE6327HTSA1 trades 15 V lower V_CEO for tighter h_FE grouping and lower V_CE(sat); versus MMBT3906LT1G, it offers superior automotive qualification, thermal performance, and gain predictability in precision analog roles.

Availability

BC858BWE6327HTSA1 is available at Aetrix Electronics and suitable for automotive cabin microphones, industrial 4–20 mA transmitters, and consumer audio line drivers requiring stable component supply and long-term lifecycle assurance.

Supply support for BC858BWE6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification infrastructure.

This transistor belongs to Infineon's BC856–BC860 family of AEC-Q101-qualified PNP/NPN matched pairs, engineered specifically for high-reliability analog signal conditioning in automotive and industrial environments.

FAQ

Is BC858BWE6327HTSA1 pin-compatible with BC848B?

No - BC858BWE6327HTSA1 is a PNP transistor while BC848B is NPN; they share identical SOT-323 pinout (1=Base, 2=Emitter, 3=Collector) but opposite polarity. Direct replacement requires circuit topology revision to accommodate PNP current flow direction and biasing polarity.

What is the maximum continuous collector current rating?

The absolute maximum continuous collector current is 100 mA at T_S ≤ 124 °C. Derating applies above this case temperature: total power dissipation drops linearly to zero at 150 °C junction temperature, per the P_tot vs. T_S curve for BC858BW variants.

Does this part support pulsed operation beyond DC ratings?

Yes - permissible pulse load follows P_tot(max)/P_tot(DC) = ƒ(t_p) with duty cycle D ≤ 5%. For t_p = 100 µs, peak power can reach 2.5× DC rating (625 mW), provided average power remains within 250 mW and thermal design accommodates transient junction rise.

How does h_FE vary with collector current?

h_FE peaks near I_C = 2 mA (220–480 for group B), declines gradually to ~180 at I_C = 10 mA, and falls further to ~120 at I_C = 100 mA. This behavior is documented in Figure 6 of the datasheet and must be accounted for in high-current switching designs.

BC858BWE6327HTSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: SC-70, SOT-323

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 100 mA

Voltage - Collector Emitter Breakdown (Max):: 30 V

Vce Saturation (Max) @ Ib, Ic:: 650mV @ 5mA, 100mA

Current - Collector Cutoff (Max):: 15nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 220 @ 2mA, 5V

Power - Max:: 250 mW

Frequency - Transition:: 250MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT323

BC858BWE6327HTSA1 FAQ

1.How can I place an order for BC858BWE6327HTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BC858BWE6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BC858BWE6327HTSA1 reliable?

The price and inventory of BC858BWE6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC858BWE6327HTSA1 is usually 5 days.

3.What payment methods are accepted for BC858BWE6327HTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BC858BWE6327HTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BC858BWE6327HTSA1?

BC858BWE6327HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BC858BWE6327HTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BC858BWE6327HTSA1?

For technical support, including BC858BWE6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC858BWE6327HTSA1 requirements.

6.How does Aetrix verify that BC858BWE6327HTSA1 is sourced from the original manufacturer or authorized distributors?

All BC858BWE6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC858BWE6327HTSA1 meets industry standards.

7.What is the process for return or replacement of BC858BWE6327HTSA1?

All BC858BWE6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BC858BWE6327HTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BC858BWE6327HTSA1 part is unused and in its original packaging.

Return procedure for BC858BWE6327HTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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