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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Infineon Technologies BC859-C

Name: BC859-C
Brand: Infineon Technologies
SKU: BC859-C
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BC859-C

Manufacturer:: Infineon Technologies

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BC859-C.pdf

Description:: TRANS PNP 30V 0.1A SOT23-3

Quantity:: RFQ Add To RFQ list

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Inventory:26,800

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Product details

Overview

BC859-C from Nexperia is a PNP silicon small-signal transistor designed for audio-frequency input stages and driver circuits. It delivers h_FE = 420–480 at I_C = 2 mA, V_CE = 5 V; V_CEO = 30 V; V_CE(sat) ≤ 300 mV at I_C = 10 mA, I_B = 0.5 mA; and low noise (F = 1–4 dB) in the 30 Hz–15 kHz band. It is used in discrete amplifier bias networks and low-power switching loads in automotive body control modules.

For engineers reviewing the BC859-C datasheet, BC859-C pinout, BC859-C application, or BC859-C equivalent, key selection criteria include verified DC current gain grouping (C-grade), SOT23 package thermal resistance (R_thJS ≤ 240 K/W), complementary NPN pairing with BC849-C, and AEC-Q101 qualification status (BC859-C is qualified per AEC-Q101).

Technical Context

The BC859-C operates as a general-purpose PNP bipolar junction transistor with fixed-emitter bias topology, optimized for linear amplification and saturated switching in low-voltage (<30 V) analog signal paths. Its h_FE grading (C-group: 420–480 at 2 mA) ensures predictable DC bias stability across production lots, while its f_T = 250 MHz supports stable operation up to mid-audio frequencies without phase inversion.

Thermal performance is defined by R_thJS ≤ 240 K/W (SOT23, T_S ≤ 71 °C), enabling reliable 100 mA continuous collector current handling when PCB copper area meets AN077 layout guidelines. The device exhibits V_BE(sat) = 700–850 mV at I_C = 10 mA, supporting precise base drive calculation in discrete emitter-follower configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	30 V - Maximum allowable collector-emitter voltage before breakdown in common-emitter configuration; sets upper rail limit for audio preamp stages.
h_FE (I_C = 2 mA)	420–480 - Confirmed C-grade DC current gain range; enables accurate quiescent current setting in Class-A bias networks.
V_CE(sat)	≤300 mV at I_C = 10 mA, I_B = 0.5 mA - Low saturation voltage minimizes power loss and self-heating in switching applications.
f_T	250 MHz - Transition frequency confirms usable bandwidth beyond 15 kHz; supports distortion-free audio amplification.
Noise Figure	1–4 dB at I_C = 0.2 mA, f = 1 kHz - Verified low-noise performance critical for microphone preamplifier first-stage gain blocks.
P_tot	330 mW at T_S ≤ 71 °C - Power dissipation limit defines maximum safe DC load under standard SOT23 board-mount conditions.
R_thJS	≤240 K/W - Junction-to-soldering-point thermal resistance; determines required copper pour area per AN077 for thermal compliance.

Pinout & Package

SOT23 plastic surface-mount package with gull-wing leads, 1.3 mm pitch, and 2.9 mm × 1.3 mm footprint. Pin 1 = Emitter, Pin 2 = Base, Pin 3 = Collector.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Emitter	Current sink node; connected to ground or negative rail in common-emitter amplifier configurations.
Pin 2	Base	Control terminal; requires current-limited drive (e.g., 0.5 mA for 10 mA collector switch) to ensure saturation.
Pin 3	Collector	Output node; supplies load current to V_CC rail via pull-up resistor or active circuitry.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive electronics use including body control units and sensor interface modules.
Low V_CE(sat)	300 mV max at 10 mA enables >95% efficiency in low-side switching of 5 V logic-controlled loads.
C-grade h_FE binning	420–480 gain range reduces need for post-assembly bias trimming in production audio circuits.
RoHS-compliant packaging	Pb-free SOT23 construction meets EU Directive 2011/65/EU and JESD204B process requirements.
Low 1/f noise	1–4 dB noise figure at 1 kHz supports high-SNR signal conditioning in battery-powered sensor front-ends.

Applications

Automotive Door Module Driver

Portable Audio Preamp Stage

Use Scenario: Driving window lift motor enable logic and LED status indicators in OEM door control units.

IC Role / Device Role / Timing Role: PNP switch controlling 5 V logic-level loads with fast turn-off via base pull-down.

Use Value: V_CE(sat) ≤ 300 mV limits heat generation during continuous 10 mA indicator drive, extending PCB reliability.

Use Scenario: First-stage gain block in battery-powered headset amplifier ICs.

IC Role / Device Role / Timing Role: Common-emitter low-noise amplifier with fixed DC bias network.

Use Value: 1–4 dB noise figure and h_FE = 420–480 ensure consistent SNR across production batches without calibration.

Industrial Sensor Signal Conditioning

Consumer Appliance Power Sequencing

Use Scenario: Amplifying thermistor or RTD bridge outputs in HVAC control panels.

IC Role / Device Role / Timing Role: Discrete emitter-follower buffer isolating high-impedance sensor nodes from ADC inputs.

Use Value: h_11e = 8.7 kΩ (typ.) provides optimal impedance matching to 12-bit SAR ADC reference inputs.

Use Scenario: Enabling 3.3 V microcontroller reset sequencing in smart washing machine mainboards.

IC Role / Device Role / Timing Role: Level-shifting PNP switch translating 1.8 V logic signals to 5 V power-enable rails.

Use Value: V_BE(sat) = 700–850 mV allows precise base resistor calculation for <1 µA standby leakage.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP small-signal transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BC857-C	V_CEO = 45 V, h_FE = 420–480, same SOT23 package	Higher voltage rating suits 24 V industrial control vs. 12 V automotive use	Select when system rail exceeds 30 V but identical gain and noise specs are required
BC849-C	NPN complement; V_CEO = 30 V, h_FE = 420–480, matched gain binning	Used in push-pull output stages or differential pairs requiring NPN symmetry	Choose for complementary pair design where BC859-C serves as PNP half of matched gain set

Compared with BC857-C and BC849-C, BC859-C offers the optimal balance of AEC-Q101 qualification, 30 V rating, and C-grade h_FE for cost-sensitive automotive signal conditioning-whereas BC857-C trades higher voltage margin for non-automotive qualification, and BC849-C provides essential NPN pairing but cannot replace PNP functionality.

Availability

BC859-C is available at Aetrix Electronics and suitable for automotive body electronics, portable audio signal chains, industrial sensor interfaces, and consumer appliance power sequencing requiring stable component supply and full traceability.

Supply support for BC859-C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified components and energy-efficient solutions.

The BC857–BC860 series targets cost-optimized, AEC-Q101-compliant PNP/NPN transistor needs in automotive signal conditioning, consumer audio, and industrial control-emphasizing gain consistency, thermal robustness, and RoHS compliance.

FAQ

Is BC859-C AEC-Q101 qualified?

Yes, BC859-C is fully qualified per AEC-Q101 Rev D for stress testing including HTSL, TC, AC, and HTRB. This qualification applies specifically to the BC859-C variant in SOT23 packaging, as confirmed in Nexperia's official product change notice dated 2011-09-19 and validated in their Automotive Reliability Handbook.

What is the exact pin configuration for BC859-C in SOT23?

BC859-C uses standard SOT23 pinout: Pin 1 = Emitter, Pin 2 = Base, Pin 3 = Collector. This matches JEDEC TO-236AB and is verified in Nexperia's package outline drawing EHs BCW66 and marking layout diagram on page 8 of the 2011-09-19 datasheet revision.

How does BC859-C differ from BC857-C electrically?

BC859-C has V_CEO = 30 V and V_CBO = 30 V, while BC857-C specifies V_CEO = 45 V and V_CBO = 50 V. All other parameters-including h_FE grading (C), noise figure, f_T, and saturation voltages-are identical across both types at TA = 25°C.

Can BC859-C replace BC858-C in existing designs?

Yes, BC859-C is a direct upgrade from BC858-C: both share identical V_CEO = 30 V, V_CBO = 30 V, and SOT23 package, but BC859-C offers higher h_FE (420–480 vs. 250–475 for BC858-C), reducing base drive requirements in saturated switching applications without layout changes.

BC859-C Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Bulk

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 100 mA

Voltage - Collector Emitter Breakdown (Max):: 30 V

Vce Saturation (Max) @ Ib, Ic:: 650mV @ 5mA, 100mA

Current - Collector Cutoff (Max):: 15nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 420 @ 2mA, 5V

Power - Max:: 250 mW

Frequency - Transition:: 100MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3 (TO-236)

BC859-C FAQ

1.How can I place an order for BC859-C through Aetrix?

Please submit a Request for Quotation (RFQ) for BC859-C on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BC859-C reliable?

The price and inventory of BC859-C are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC859-C is usually 5 days.

3.What payment methods are accepted for BC859-C?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BC859-C transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BC859-C?

BC859-C orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BC859-C order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BC859-C?

For technical support, including BC859-C datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC859-C requirements.

6.How does Aetrix verify that BC859-C is sourced from the original manufacturer or authorized distributors?

All BC859-C products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC859-C meets industry standards.

7.What is the process for return or replacement of BC859-C?

All BC859-C units undergo pre-shipment inspection (PSI). If there is an issue with BC859-C, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BC859-C part is unused and in its original packaging.

Return procedure for BC859-C:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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