Infineon Technologies BC860BWH6327XTSA1

Overview

BC860BWH6327XTSA1 from Infineon Technologies is a PNP silicon small-signal transistor designed for audio-frequency input stages and driver circuits. It delivers high DC current gain (h_FE = 220–480 at I_C = 2 mA), low V_CE(sat) (≤300 mV at I_C = 10 mA/I_B = 0.5 mA), and low noise (F = 1–4 dB at 1 kHz), making it suitable for low-distortion preamplifier and level-shifting applications in automotive and industrial control modules.

For engineers reviewing the BC860BWH6327XTSA1 datasheet, BC860BWH6327XTSA1 pinout, BC860BWH6327XTSA1 application, or BC860BWH6327XTSA1 equivalent, key selection criteria include its AEC-Q101 qualification, SOT323 package thermal resistance (R_thJS ≤ 105 K/W), complementary NPN pairing with BC847B/BC848B, and guaranteed h_FE group B performance across temperature.

Technical Context

This device operates as a general-purpose PNP bipolar junction transistor with fixed-emitter biasing capability. Its h_FE grouping (B) ensures consistent current amplification between 220 and 480 at I_C = 2 mA and V_CE = 5 V, while its f_T of 250 MHz supports stable operation up to mid-VHF frequencies in active load or cascode configurations.

The transistor exhibits low V_BE(sat) (≤850 mV at I_C = 100 mA/I_B = 0.5 mA) and tight V_CE(sat) distribution (max 300 mV at I_C = 10 mA/I_B = 0.5 mA), enabling efficient switching in discrete logic interfaces and analog signal inversion stages where base drive efficiency and thermal stability are critical.

Key Specifications

Pinout & Package

BC860BWH6327XTSA1 is housed in a RoHS-compliant SOT323 plastic package with gull-wing leads, optimized for thermal dissipation and board-level reliability in space-constrained designs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP small-signal transistor applications.

Compared with BC857BWH6327XTSA1, BC860BWH6327XTSA1 offers superior thermal performance in SOT323, enabling higher ambient operation in sealed enclosures; versus MMBT3906LT1G, it provides certified reliability for mission-critical automotive functions without design revalidation.

Availability

BC860BWH6327XTSA1 is available at Aetrix Electronics and suitable for automotive body control modules, industrial sensor transmitters, and audio signal conditioning circuits requiring stable component supply and long-term lifecycle support.

Supply support for BC860BWH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification infrastructure.

The BC8xx series belongs to Infineon's general-purpose bipolar transistor product line, engineered for high-reliability discrete signal conditioning and switching in harsh-environment applications including automotive, industrial automation, and medical instrumentation.

FAQ

What is the maximum operating temperature for BC860BWH6327XTSA1?

The junction temperature limit is 150 °C, and the storage temperature range is –65 °C to +150 °C. When mounted on FR-4 PCB with standard copper pour, the device sustains 250 mW dissipation up to case temperature (T_S) of 124 °C, as validated by Infineon's thermal characterization data for SOT323 packaging.

Does BC860BWH6327XTSA1 support pulsed operation beyond its DC ratings?

Yes - pulse operation is supported with duty cycle (D) ≤ 2% and pulse width (t_p) ≤ 300 µs, allowing peak power up to 1.25× P_tot (312 mW). This is confirmed by Infineon's permissible pulse load curves in Application Note AN2007-09, Figure EHP00377.

How does the h_FE vary with collector current?

h_FE peaks near I_C = 2 mA (220–480 for group B), declines gradually above 10 mA, and drops sharply below 100 µA. The full curve is documented in Infineon's datasheet Figure EHP00382, showing h_FE ≥ 140 at I_C = 10 µA and ≥ 180 at I_C = 100 mA under specified test conditions.

Is BC860BWH6327XTSA1 pin-compatible with BC857BWH6327XTSA1?

No - although both are PNP transistors with identical pin numbering (1=Base, 2=Emitter, 3=Collector), BC860BWH6327XTSA1 uses SOT323 while BC857BWH6327XTSA1 uses SOT23. Their footprints differ in pad pitch (0.65 mm vs. 0.95 mm) and thermal pad layout, requiring PCB redesign for substitution.