Infineon Technologies BCW61CE6327HTSA1

Overview

BCW61CE6327HTSA1 from Infineon Technologies is a PNP silicon small-signal transistor designed for audio-frequency input stages and driver circuits. It delivers h_FE = 40–100 at I_C = 10 µA, V_CE = 5 V; V_CEO = 32 V; V_CE(sat) ≤ 0.25 V at I_C = 10 mA, I_B = 0.25 mA; and f_T = 250 MHz - enabling low-noise amplification in compact analog signal paths.

For engineers reviewing the BCW61CE6327HTSA1 datasheet, BCW61CE6327HTSA1 pinout, BCW61CE6327HTSA1 application, or BCW61CE6327HTSA1 equivalent, key selection criteria include its SOT-23 package, complementary pairing with BCW60/BCX70 NPN types, low V_CE(sat), high h_FE consistency across gain groups (C/J), and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This transistor operates as a linear PNP amplifier with DC current gain defined across three test conditions: h_FE ≥ 40 at I_C = 10 µA, ≥ 100 at I_C = 2 mA, and ≥ 140 at I_C = 50 mA (V_CE = 1 V). Its low noise figure of 2 dB at I_C = 200 µA enables use in sensitive preamplifier nodes.

The device features a maximum collector-emitter voltage of 32 V, thermal resistance R_thJS ≤ 240 K/W, and junction temperature rating up to 150 °C. Its SOT-23 footprint supports high-density PCB layouts while maintaining stable gain and saturation performance across –50 °C to +100 °C operating range.

Key Specifications

Pinout & Package

BCW61CE6327HTSA1 is housed in a RoHS-compliant SOT-23 plastic surface-mount package with gull-wing leads. The package measures 2.9 mm × 1.3 mm × 1.0 mm and is optimized for reflow soldering and automated placement.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP small-signal transistor applications.

Compared with BCW61B, BCW61CE6327HTSA1 offers higher h_FE consistency for dynamic bias networks; versus BCX71J, it trades 13 V V_CEO headroom for tighter thermal resistance and lower cost in 24 V applications.

Availability

BCW61CE6327HTSA1 is available at Aetrix Electronics and suitable for automotive body electronics, industrial sensor interfaces, and consumer audio signal conditioning requiring stable component supply and AEC-Q101 compliance.

Supply support for BCW61CE6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and discrete components with global manufacturing and quality certification.

This part belongs to Infineon's BCW/BCX family of general-purpose bipolar transistors, engineered for reliable, low-noise amplification and switching in space-constrained, thermally demanding environments.

FAQ

What is the maximum continuous collector current for BCW61CE6327HTSA1?

The absolute maximum continuous collector current is 100 mA at T_S ≤ 71 °C. Derating is required above this case temperature, with total power dissipation dropping to zero at 150 °C junction temperature. Pulse operation up to 200 mA is permitted for durations ≤ 10 ms with duty cycle ≤ 2%.

Is BCW61CE6327HTSA1 pin-compatible with BCW60 series transistors?

Yes - both BCW61CE6327HTSA1 (PNP) and BCW60C E6327HTSA1 (NPN) share identical SOT-23 pinout (B-E-C), enabling direct complementary placement in differential pairs and push-pull output stages without layout changes.

Does this transistor require external biasing components for stable operation?

Yes - as a discrete bipolar transistor, BCW61CE6327HTSA1 requires external base resistors to set I_B, emitter resistors for DC feedback, and bypass capacitors for AC coupling. Its h_FE variation across temperature necessitates emitter degeneration in precision gain stages.

Can BCW61CE6327HTSA1 be used in RF applications above 10 MHz?

No - although f_T = 250 MHz indicates high-frequency capability, its SOT-23 package parasitics and lack of specified S-parameters beyond 100 MHz limit practical use to audio and low-speed switching. For RF, purpose-built RF transistors with documented matching networks are recommended.