Infineon Technologies BG3123RH6327XTSA1

Overview

BG3123RH6327XTSA1 from Infineon Technologies is a dual N-channel RF MOSFET tetrode optimized for UHF (amp. B) and VHF (amp. A) tuner applications in NTSC/PAL broadcast receivers, featuring 8 V V_DS, 25 mA/20 mA continuous drain current per channel, 1.9 pF/1.5 pF gate1 input capacitance, and 1.8 dB/1.4 dB noise figure at 800 MHz/45 MHz.

For engineers reviewing the BG3123RH6327XTSA1 datasheet, BG3123RH6327XTSA1 pinout, BG3123RH6327XTSA1 application, or BG3123RH6327XTSA1 equivalent, this device supports gain-controlled dual-stage RF amplification with integrated ESD protection, AGC range up to 45 dB, and cross-modulation suppression ≥90 dB under defined test conditions.

Technical Context

This dual-gate MOSFET implements two independent gain-controlled RF amplifier stages in a single SOT363 package: amp. A (VHF) and amp. B (UHF), each with dedicated gate terminals (G1*, G2, G1**) and shared source/drain connections. It operates with DC biasing via external resistors (RG1 = 60 kΩ for amp. A, 50 kΩ for amp. B) and supports AGC through VG2S voltage sweep from 0–4 V.

The device uses tetrode architecture with separate control gates enabling high isolation between input and output paths, low noise figure (1.4–1.8 dB), and stable power gain (24–32 dB) across 45–800 MHz. Integrated gate protection diodes and RoHS-compliant Pb-free construction meet AEC-Q101 qualification for automotive tuner modules.

Key Specifications

Pinout & Package

Package: SOT363 - surface-mount plastic package with 6 leads, 1.3 mm × 2.1 mm footprint, suitable for high-frequency RF layout with minimized parasitic inductance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-gate RF MOSFET amplifier applications.

Compared with BG3123RH6327XTSA1, BG3122RH6327XTSA1 trades 10 dB AGC range and 5 mS transconductance for lower unit cost, while BF998,115 necessitates additional components and layout effort to replicate dual-band functionality-making BG3123 the optimal choice for space- and performance-constrained tuner modules.

Availability

BG3123RH6327XTSA1 is available at Aetrix Electronics and suitable for TV broadcast tuner modules, automotive digital radio receivers, and professional video monitoring equipment requiring stable component supply across extended product lifecycles.

Supply support for BG3123RH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive electronics, with global R&D and manufacturing infrastructure.

The BG3123 belongs to Infineon's RF Transistor product line, designed specifically for high-linearity, low-noise dual-band tuner applications in broadcast and automotive infotainment systems.

FAQ

What is the maximum allowable gate-source voltage for BG3123RH6327XTSA1?

The absolute maximum gate1-source and gate2-source voltage is ±6 V, as specified in the Maximum Ratings table. Exceeding this value risks permanent damage to the gate oxide layer. During normal operation, VG1S and VG2S must remain within −0.7 V to +4.5 V for amp. A and −0.6 V to +4 V for amp. B to ensure reliable pinch-off and linear amplification behavior.

How does the dual-gate architecture improve cross-modulation performance?

The physical separation of G1* (amp. A) and G1** (amp. B), combined with shared G2 control, enables independent gain setting per band while minimizing intermodulation distortion. Measured cross-modulation exceeds 90 dB at 40 dB AGC depth due to reduced channel coupling and optimized tetrode geometry-critical for co-channel interference suppression in multi-standard tuners.

Is BG3123RH6327XTSA1 suitable for 5G NR sub-6 GHz front-end use?

No-BG3123RH6327XTSA1 is characterized and optimized for VHF (45 MHz) and UHF (800 MHz) broadcast bands only. Its gain rolls off above 1 GHz, and its noise figure degrades beyond 1 GHz. For sub-6 GHz 5G applications, Infineon's BFP640 or BFP740 series RF transistors are recommended alternatives with verified performance up to 6 GHz.

What thermal derating applies when mounting BG3123RH6327XTSA1 on standard FR-4 PCB?

At 120°C soldering point temperature (T_S), total power dissipation drops to 100 mW for amp. A and 120 mW for amp. B, per the P_tot = f(T_S) curves. With R_th(ch–s) ≤150 K/W, junction temperature remains below 150°C if PCB copper area provides ≥1 cm² thermal pad and airflow is ≥0.5 m/s-ensuring compliance with AEC-Q101 thermal stress requirements.