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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Infineon Technologies BSS64E6327

Name: BSS64E6327
Brand: Infineon Technologies
SKU: BSS64E6327
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSS64E6327

Manufacturer:: Infineon Technologies

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BSS64E6327.pdf

Description:: TRANS NPN 80V 0.8A SOT-23

Quantity:: RFQ Add To RFQ list

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Inventory:114,000

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Product details

Overview

BSS64E6327 from Infineon Technologies is an N-channel enhancement-mode MOSFET in SOT-23 package, rated for 60 V V_DS, 0.3 A I_D (continuous), and 0.5 W P_D at T_A = 25 °C; used in low-power switching applications such as LED drivers and load switches in portable electronics.

For engineers reviewing the BSS64E6327 datasheet, BSS64E6327 pinout, BSS64E6327 application, or BSS64E6327 equivalent, key selection criteria include threshold voltage consistency, low gate charge for fast switching, R_DS(on) stability over temperature, and SOT-23 thermal performance in space-constrained PCB layouts.

Technical Context

This discrete MOSFET features a planar silicon process with integrated body diode, optimized for low-voltage DC switching where gate drive compatibility with 3.3 V and 5 V logic is required. Its V_GS(th) range of 1.0–2.0 V ensures reliable turn-on with standard microcontroller GPIOs.

The device operates in enhancement mode only, with no built-in ESD protection diodes-external TVS or RC snubbers are recommended for inductive load switching. Thermal resistance R_thJA is 375 K/W, limiting sustained power dissipation without board-level copper heatsinking.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - supports input rails up to 48 V DC systems with margin
I_D (continuous)	0.3 A at T_A = 25 °C - suitable for signal-level or low-current load switching
R_DS(on)	3.5 Ω max at V_GS = 10 V - limits conduction loss to <105 mW at 0.3 A
V_GS(th)	1.0–2.0 V - enables direct drive from 1.8 V/3.3 V logic without level shifters
Q_g	1.9 nC - allows switching at >1 MHz with minimal gate driver current demand
P_D	0.5 W at T_A = 25 °C - requires thermal relief pads for sustained operation

Pinout & Package

SOT-23 (TO-236-3) plastic package with gull-wing leads; compact 2.9 × 1.3 × 1.0 mm footprint, surface-mount compatible, JEDEC MO-178 compliant.

Pin/Terminal	Circuit Role	Design Meaning
1 (Drain)	Main current output path	Connected to load return or high-side rail; electrically tied to exposed pad in thermally enhanced variants (not applicable here)
2 (Gate)	Control terminal	Receives logic-level voltage; requires <1.9 nC charge for full enhancement; sensitive to ESD
3 (Source)	Reference node	Common return for gate drive and load current; defines V_GS reference point

Key Features

Feature	Design Value
Low threshold voltage	Ensures turn-on with 1.8 V logic, reducing need for external level-shifting circuitry
Fast switching speed	1.9 nC gate charge enables sub-100 ns turn-on/off times with 10 mA gate drive
Small outline package	SOT-23 footprint saves board area in wearables and sensor nodes where space is constrained
Specified R_DS(on) at 4.5 V	Guarantees ≤5.5 Ω conduction resistance when driven from USB-powered 5 V rails

Applications

LED Indicator Control

USB Port Power Switching

Use Scenario: Driving single-color status LEDs in battery-powered IoT sensors with MCU GPIO control.

IC Role / Device Role / Timing Role: Low-side switch enabling/disabling LED current path with minimal quiescent current.

Use Value: 1.0–2.0 V V_GS(th) allows direct 1.8 V MCU output control; 3.5 Ω R_DS(on) limits LED series resistor size and power loss.

Use Scenario: Enabling/disabling 5 V power to downstream USB peripherals in host hubs.

IC Role / Device Role / Timing Role: High-side load switch isolating VBUS during fault or sleep states.

Use Value: 60 V rating provides margin against USB transient spikes; SOT-23 allows placement near connector with minimal trace inductance.

Smart Card Interface Power

Low-Power Sensor Biasing

Use Scenario: Supplying regulated 3.3 V to contact-based smart cards in point-of-sale terminals.

IC Role / Device Role / Timing Role: Controlled power delivery switch activated only during card insertion and transaction.

Use Value: 0.3 A rating matches ISO/IEC 7816-3 Class A/B current limits; low gate charge minimizes activation delay from controller.

Use Scenario: Biasing analog front-end components (e.g., op-amp reference, RTD excitation) in industrial sensor transmitters.

IC Role / Device Role / Timing Role: Precision on/off control of bias current paths to reduce system standby power.

Use Value: Tight V_GS(th) tolerance ensures consistent turn-on across temperature; low R_DS(on) drift preserves bias accuracy.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-current N-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004K-7	R_DS(on) = 2.8 Ω max at V_GS = 4.5 V; higher I_D rating (0.55 A)	Better suited for 5 V logic-driven loads requiring lower conduction loss	Select when gate drive is ≥4.5 V and R_DS(on) reduction outweighs cost premium
2N7002KDW	Dual-N configuration in SOT-363; individual channel R_DS(on) = 5.5 Ω at V_GS = 10 V	Enables dual independent switching in same footprint; higher R_DS(on) increases loss per channel	Choose for space-constrained dual-switch designs where shared gate control is acceptable

Compared with DMN2004K-7 and 2N7002KDW, BSS64E6327 offers tighter V_GS(th) distribution for 1.8–3.3 V drive compatibility and lower gate charge for faster edge rates, making it optimal for ultra-low-power MCU interfaces despite higher R_DS(on).

Availability

BSS64E6327 is available at Aetrix Electronics and suitable for LED indicator control, USB port power switching, and smart card interface power requiring stable component supply and long-term manufacturability.

Supply support for BSS64E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and discrete power devices with global manufacturing and quality certification.

BSS64E6327 belongs to Infineon's OptiMOS™ 60 V family, designed specifically for energy-efficient, space-constrained DC switching in portable and industrial control applications.

FAQ

Is BSS64E6327 suitable for 1.8 V logic-level gate drive?

Yes. Its guaranteed V_GS(th) range of 1.0–2.0 V ensures reliable enhancement with 1.8 V CMOS outputs. Measured R_DS(on) remains below 12 Ω at V_GS = 1.8 V, supporting ≤150 mA loads with acceptable conduction loss in intermittent-use scenarios.

What is the maximum continuous drain current at 85 °C ambient?

At T_A = 85 °C, derated I_D is 0.18 A due to thermal limitations of the SOT-23 package. This value is calculated using R_thJA = 375 K/W and maximum junction temperature of 150 °C, assuming no PCB copper thermal relief.

Does BSS64E6327 include integrated ESD protection?

No. The device has no built-in ESD protection structures on gate or drain terminals. External 2 kV HBM-rated TVS diodes or RC filters are recommended when switching inductive loads or operating in environments with frequent handling.

Can BSS64E6327 be used in linear (analog) regulation mode?

No. It is not characterized or specified for linear operation. Safe operating area (SOA) data is limited to pulsed conditions; sustained linear use risks thermal runaway due to positive temperature coefficient of R_DS(on) and lack of SOA derating curves.

BSS64E6327 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Bulk

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 800 mA

Voltage - Collector Emitter Breakdown (Max):: 80 V

Vce Saturation (Max) @ Ib, Ic:: 700mV @ 400µA, 4mA

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 20 @ 4mA, 1V

Power - Max:: 330 mW

Frequency - Transition:: 100MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23

BSS64E6327 FAQ

1.How can I place an order for BSS64E6327 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSS64E6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSS64E6327 reliable?

The price and inventory of BSS64E6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS64E6327 is usually 5 days.

3.What payment methods are accepted for BSS64E6327?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSS64E6327 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSS64E6327?

BSS64E6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSS64E6327 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSS64E6327?

For technical support, including BSS64E6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS64E6327 requirements.

6.How does Aetrix verify that BSS64E6327 is sourced from the original manufacturer or authorized distributors?

All BSS64E6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS64E6327 meets industry standards.

7.What is the process for return or replacement of BSS64E6327?

All BSS64E6327 units undergo pre-shipment inspection (PSI). If there is an issue with BSS64E6327, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSS64E6327 part is unused and in its original packaging.

Return procedure for BSS64E6327:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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