Cypress Semiconductor Corp CY14B101LA-BA25XI

Overview

CY14B101LA-BA25XI from Infineon Technologies (formerly Cypress) is a 1-Mbit nonvolatile SRAM (nvSRAM) with QuantumTrap technology, organized as 128 K × 8, 25 ns access time, single 3.0 V (–10% to +20%) supply, and industrial temperature range (–40°C to +85°C). It performs automatic STORE on power-down using an external VCAP capacitor and supports software/hardware-initiated STORE/RECALL for mission-critical data retention in metering and industrial control systems.

For engineers reviewing the CY14B101LA-BA25XI datasheet, CY14B101LA-BA25XI pinout, CY14B101LA-BA25XI application, or CY14B101LA-BA25XI equivalent, key selection considerations include AutoStore timing dependency on VCAP capacitance, HSB pin behavior during hardware STORE, ×8 vs ×16 configuration compatibility, and 1 million STORE endurance versus infinite SRAM read/write cycles.

Technical Context

This nvSRAM integrates parallel SRAM and QuantumTrap nonvolatile storage in each cell, enabling simultaneous STORE/RECALL across all 131,072 bytes without block erasure. The architecture decouples volatile operation from nonvolatile persistence: SRAM functions at full speed (25 ns tAA), while STORE/RECALL operations inhibit SRAM access and require dedicated timing windows (tSTORE = 12 ms max).

AutoStore triggers when VCC falls below VSWITCH (2.2 V min), disconnecting VCAP from VCC and using stored charge to complete a full-cell STORE. Hardware STORE is initiated by pulling HSB low, and software STORE uses a specific address write sequence - both bypass AutoStore's write-activity precondition, unlike power-loss-triggered STORE.

Key Specifications

Pinout & Package

Package: 32-pin Small Outline Integrated Circuit (SOIC), 300 mil width, RoHS-compliant, lead-free finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nvSRAM applications.

Compared with FM24V10-G and MB85RS1MT-FPN-GE1, CY14B101LA-BA25XI provides deterministic AutoStore timing, hardware status feedback via HSB, and pin-compatible replacement for legacy SRAM sockets - making it optimal for retrofitting industrial controllers without redesigning PCB layout or firmware timing.

Availability

CY14B101LA-BA25XI is available at Aetrix Electronics and suitable for smart metering, industrial PLCs, railway signaling, and medical diagnostics requiring stable component supply, long-term lifecycle support, and guaranteed 20-year data retention.

Supply support for CY14B101LA-BA25XI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains the nvSRAM product line under its Industrial & Power Control division, focusing on high-reliability memory for mission-critical infrastructure.

The CY14B101LA series belongs to Infineon's QuantumTrap nvSRAM product line, engineered specifically for applications demanding instantaneous, deterministic nonvolatile storage without batteries, capacitors beyond VCAP, or firmware intervention during power loss.

FAQ

What is the minimum VCAP capacitance required for reliable AutoStore operation?

The CY14B101LA-BA25XI requires a minimum 4.7 µF ±20% tantalum capacitor on the VCAP pin to ensure successful STORE completion under worst-case conditions (VCC = 2.7 V, T = +85°C, tSTORE = 12 ms). Lower capacitance risks incomplete STORE and data corruption; ceramic capacitors are not recommended due to DC bias derating and insufficient energy storage.

Can CY14B101LA-BA25XI be used in a ×16 system interface?

No - CY14B101LA is strictly a ×8-organized device (128 K × 8). The ×16 variant is CY14B101NA. Pinout, address mapping (A0–A16 vs A0–A15), and data bus width (DQ0–DQ7 only) are incompatible with ×16 systems. Attempting to use it in a ×16 interface will result in incorrect addressing and data misalignment.

How does the HSB pin behave during power-up and AutoStore?

At power-up, HSB is driven HIGH for tHHHD (≤100 ns) then held HIGH by a weak internal pull-up. During AutoStore, HSB remains HIGH until VCC drops below VSWITCH, then goes LOW only if an external pull-down is applied - otherwise it floats. HSB asserts LOW *only* during active hardware STORE, not during AutoStore, serving solely as status output in that mode.

Is software STORE affected by the "write activity precondition" that applies to AutoStore and hardware STORE?

No - software STORE (initiated by the 0x0000 → 0x0001 → 0x0000 address sequence) executes unconditionally, regardless of whether any SRAM writes occurred since the last STORE or RECALL. This makes it ideal for forced, deterministic saves in response to host commands or critical events, unlike AutoStore which skips execution if no write has occurred.