Cypress Semiconductor Corp CY14B104NA-ZS25XE

Overview

CY14B104NA-ZS25XE from Cypress Semiconductor is an automotive-grade 4-Mbit (256K × 16) non-volatile SRAM with QuantumTrap technology, operating at 25 ns access time and supporting –40 °C to +85 °C (Automotive-A grade). It integrates fast SRAM with embedded non-volatile storage, enabling automatic STORE on power-down via VCAP capacitor and software- or hardware-triggered STORE/RECALL. Used in engine control units for real-time parameter retention during ignition cycling.

For engineers reviewing the CY14B104NA-ZS25XE datasheet, CY14B104NA-ZS25XE pinout, CY14B104NA-ZS25XE application, or CY14B104NA-ZS25XE equivalent, key selection criteria include AutoStore timing (tSTORE = 10 ms max), VCAP capacitance requirement (0.1 µF), HSB pin behavior during STORE busy state, and compatibility with 16-bit parallel bus interfaces in safety-critical automotive systems.

Technical Context

The CY14B104NA-ZS25XE implements a dual-cell architecture: standard SRAM for high-speed read/write and QuantumTrap non-volatile elements per cell for data retention. STORE operations transfer data from SRAM to non-volatile cells either automatically on VCC drop below VSWITCH (2.7 V), via HSB pin assertion, or through six-address software sequence; RECALL restores data on power-up or via identical six-address sequence.

It supports byte-level write control via BHE/BLE pins, operates on single 3.0 V ±10% supply, and enforces STORE inhibition unless at least one SRAM write occurs since last STORE/RECALL - preventing spurious non-volatile writes. HSB functions as both open-drain status output (LOW during STORE/RECALL) and hardware trigger input (LOW-initiated STORE).

Key Specifications

Pinout & Package

Package: 48-ball fine-pitch ball grid array (FBGA), 6 mm × 8 mm, 0.8 mm pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar non-volatile SRAM applications.

Compared with FM24V10-G and MB85RS64VPNF-G-JNERE1, CY14B104NA-ZS25XE uniquely delivers parallel 16-bit bus performance, integrated AutoStore power-loss detection, and AEC-Q100 Grade 2 qualification - making it the only option for safety-critical automotive SRAM replacement with zero firmware modification.

Availability

CY14B104NA-ZS25XE is available at Aetrix Electronics and suitable for engine control units, ADAS domain controllers, and electric power steering modules requiring stable component supply across extended automotive production lifecycles.

Supply support for CY14B104NA-ZS25XE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability semiconductor solutions for automotive, industrial, and IoT markets, with headquarters in San Jose, CA.

The CY14B nvSRAM product line targets automotive electronics needing deterministic non-volatile storage without battery backup - specifically engineered for ECU, transmission, and chassis control applications demanding AEC-Q100 compliance and 20-year data retention.

FAQ

What is the minimum VCAP capacitance required for reliable AutoStore operation?

The CY14B104NA-ZS25XE requires a 0.1 µF ceramic capacitor on the VCAP pin, rated for ≥10 V, placed within 5 mm of the device. This value ensures sufficient stored energy to complete a full STORE cycle (tSTORE ≤ 10 ms) when VCC drops below VSWITCH (2.7 V). Larger capacitors do not improve reliability but may slow VCAP recharge time between power-loss events.

Can CY14B104NA-ZS25XE be used in systems with 3.3 V supply rails?

No - the CY14B104NA-ZS25XE-ZS25XE variant is specified for 3.0 V ±10% (2.7–3.3 V) operation only. Using it with a nominal 3.3 V rail exceeds the +10% upper limit (3.3 V > 3.3 V max), risking parametric failure and reduced data retention. For 3.3 V systems, select the CY14B104NA-AX version, which is rated for 3.3 V ±0.3 V.

How does the HSB pin behave during a Software STORE cycle?

During a Software STORE, the HSB pin is driven LOW by internal circuitry immediately after the sixth address (0x8FC0) is read, indicating STORE initiation. It remains LOW for the full tSTORE duration (≤10 ms), then transitions HIGH for tHHHD (100 ns), followed by weak internal pull-up. External pull-up resistors are optional but recommended for noise immunity in high-EMI automotive environments.

Is the CY14B104NA-ZS25XE compatible with 8-bit microcontrollers?

Yes - though organized as 256K × 16, it supports byte-wide access via BHE/BLE pins. When BLE is LOW and BHE is HIGH, only DQ0–DQ7 are enabled; when BHE is LOW and BLE is HIGH, only DQ8–DQ15 are active. This allows seamless integration with 8-bit MCUs like STMicroelectronics SPC56EL60, provided address lines A0–A16 are properly mapped and WE/OE timing meets tAA = 25 ns.