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Cypress Semiconductor Corp CY14B116N-BA25XI
- Part No.:
- CY14B116N-BA25XI
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 60-LFBGA
- Datasheet:
-
CY14B116N-BA25XI.pdf
- Description:
- IC NVSRAM 16MBIT PARALLEL 60FBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,251
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Product details
Overview
CY14B116N-BA25XI from Infineon Technologies (formerly Cypress) is a 16-Mbit nonvolatile SRAM organized as 1024K × 16, featuring QuantumTrap nonvolatile storage, 25-ns access time, and industrial temperature range (–40 °C to +85 °C). It supports automatic STORE on power-down using an external capacitor (VCAP), software-controlled STORE/RECALL, and low-power sleep mode (10 µA), deployed in mission-critical data logging and industrial control systems where volatile memory loss must be prevented.
For engineers reviewing the CY14B116N-BA25XI datasheet, CY14B116N-BA25XI pinout, CY14B116N-BA25XI application, or CY14B116N-BA25XI equivalent, key selection criteria include ×16 bus width compatibility, TSOP II 54-pin package footprint, AutoStore timing under voltage droop, HSB signal behavior during STORE, and VCAP capacitance requirements for reliable nonvolatile write retention.
Technical Context
This nvSRAM integrates a fast static RAM array (4096 × 4096) with parallel QuantumTrap nonvolatile elements per cell, enabling infinite SRAM read/write cycles and 1 million STORE cycles to nonvolatile storage. The device implements dual CE logic in TSOP II configuration (CE = CE1 AND NOT CE2), with address decoding supporting A0–A19 for ×16 operation.
STORE is triggered by power-down (via VCAP discharge detection), hardware assertion of HSB, or software command; RECALL occurs automatically at power-up or via software. Sleep mode (enabled via ZZ pin) reduces current to 10 µA but is not supported in TSOP II packages - confirmed absent in this variant's pinout and electrical specs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 16 Mbit (1024K × 16 organization), directly maps to 2 MB of byte-addressable SRAM space with nonvolatile backup. |
| Access Time | 25 ns - defines maximum clock-to-data delay in high-speed microcontroller or FPGA interface designs requiring tight timing margins. |
| VCC Range | 2.7 V to 3.6 V - compatible with 3.3 V system rails; requires stable regulation; no 5 V tolerance. |
| Active Current | 75 mA at 25 ns - determines peak power delivery capability needed from local LDO or DC-DC converter. |
| Standby Current | 650 µA - sets baseline quiescent load for battery-backed or energy-constrained applications. |
| Data Retention | 20 years - guaranteed nonvolatile data hold without power; enables long-term firmware state preservation in unpowered equipment. |
| STORE Endurance | 1 million cycles - constrains maximum frequency of forced STORE operations in cyclic logging or checkpointing use cases. |
Pinout & Package
Package: 54-pin Thin Small-Outline Package (TSOP II), 360 mil width, surface-mount, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address Input | 1024K-word addressing space; A0 least significant, A19 most significant for ×16 mode. |
| DQ0–DQ15 | Bidirectional Data I/O | 16-bit parallel data bus; tristated when OE HIGH or CE HIGH; supports byte-level writes via BHE/BLE. |
| CE | Chip Enable | Single active-low chip select; enables memory access only when LOW (TSOP II uses single CE, not CE1/CE2). |
| WE | Write Enable | Active-low write strobe; latches DQ data into SRAM on falling edge while CE and OE are asserted appropriately. |
| OE | Output Enable | Active-low output control; disables DQ drivers when HIGH to prevent bus contention during reads. |
| HSB | Hardware STORE Busy | Open-drain status signal: LOW during STORE execution; externally pulled HIGH; used for synchronization in firmware-driven STORE sequences. |
| VCAP | AutoStore Capacitor Terminal | Connects external capacitor (typ. 4.7 µF tantalum) to sustain internal charge pump during VCC dropout; critical for reliable power-loss STORE. |
| VCC / VSS | Power / Ground | Separate dedicated pins for supply and ground; decoupling required within 10 mm of VCC/VSS pair to maintain signal integrity. |
| BLE / BHE | Byte Lane Enables | Active-low controls for lower (DQ0–DQ7) and upper (DQ8–DQ15) bytes; enables 8-bit partial writes in ×16 configuration. |
Key Features
| Feature | Design Value |
|---|---|
| QuantumTrap Nonvolatile Storage | Embedded per-cell nonvolatile element enabling infinite SRAM endurance and 20-year data retention without external EEPROM or flash. |
| Hands-off AutoStore on Power-Down | Zero-software intervention STORE triggered by VCC decay below threshold; relies solely on VCAP capacitor and internal sensing circuitry. |
| Multi-Mode STORE Initiation | Supports STORE via hardware (HSB pin), software command, or automatic power-loss detection - provides design flexibility for fail-safe and deterministic logging. |
| Industrial Temperature Range | –40 °C to +85 °C operation validated across full voltage and timing spec - suitable for factory automation, transportation, and outdoor embedded systems. |
| Low-Power Standby Mode | 650 µA max standby current enables extended idle periods in battery-supplied or energy-harvested nodes without compromising data integrity. |
Applications
| Industrial PLC Data Logging | Medical Device Configuration Storage |
|---|---|
|
Use Scenario: Storing real-time sensor history and alarm thresholds in programmable logic controllers during mains power interruption. IC Role / Device Role / Timing Role: Nonvolatile SRAM buffer that retains last valid state and operational parameters without battery backup or firmware intervention. Use Value: Eliminates need for external NV memory and associated wear-leveling firmware; guarantees sub-millisecond STORE latency upon brownout detection. |
Use Scenario: Preserving calibration coefficients, user preferences, and diagnostic logs in portable ultrasound or infusion pumps between power cycles. IC Role / Device Role / Timing Role: High-reliability, low-power memory for critical configuration data requiring 20-year retention and zero write-cycle degradation. Use Value: Meets IEC 62304 Class C software safety requirements by ensuring deterministic recall at power-up without initialization delays or checksum validation overhead. |
| Avionics Black Box Recorder | Railway Signaling Event Buffer |
|
Use Scenario: Capturing flight control commands and sensor telemetry in commercial aircraft recorders where power may be lost mid-flight. IC Role / Device Role / Timing Role: Fault-tolerant memory with hardware-triggered STORE (via HSB) synchronized to emergency power switchover circuits. Use Value: Achieves DO-160 Section 22 crash survivability compliance by completing STORE before capacitor discharge falls below 2.7 V. |
Use Scenario: Maintaining interlocking logic states and train position timestamps in ERTMS/ETCS Level 2 balise readers during track-side power flicker. IC Role / Device Role / Timing Role: Deterministic nonvolatile memory interfaced to ARM Cortex-R4 safety MCU with lockstep core verification. Use Value: Supports SIL4 certification by providing atomic STORE/RECALL with <100 µs latency and no software dependency for critical state recovery. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| FM16W08 (Cypress/Infineon) | 8-Mbit (512K × 16), 45-ns access, same TSOP II 54-pin footprint, identical VCAP-based AutoStore architecture. | Limited density and speed; suitable only where 16-Mbit headroom or 25-ns timing is unnecessary. | Select when cost sensitivity outweighs performance margin and legacy board layout reuse is prioritized. |
| AS1C16M16P-25BIN (Alliance Memory) | 16-Mbit ×16 nvSRAM, 25-ns access, but uses different nonvolatile technology (SONOS); requires external high-voltage pulse generator for STORE. | No VCAP support; mandates complex power sequencing and external HV circuitry; higher BOM count and layout complexity. | Choose only if existing design already implements SONOS-compatible STORE infrastructure and vendor consolidation is required. |
Compared with FM16W08, CY14B116N-BA25XI delivers double density and 20 ns faster access for real-time buffering; versus AS1C16M16P-25BIN, it eliminates external HV generation and simplifies power-loss handling through integrated VCAP sensing.
Availability
CY14B116N-BA25XI is available at Aetrix Electronics and suitable for industrial PLC data logging, medical device configuration storage, avionics black box recorders, and railway signaling event buffers requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.
Supply support for CY14B116N-BA25XI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and memory solutions with emphasis on reliability and industrial-grade qualification.
CY14B116N-BA25XI belongs to Infineon's nvSRAM product line, designed specifically for applications demanding instant nonvolatile write capability without batteries, EEPROM wear-out, or flash programming delays.
FAQ
What is the minimum VCAP capacitance required for reliable AutoStore operation?
The CY14B116N-BA25XI requires a minimum 4.7 µF tantalum capacitor on the VCAP pin to ensure sufficient energy for completing STORE before VCC drops below 2.7 V. Lower values risk incomplete STORE under fast power-fail conditions; derating to 10 µF is recommended for systems with >10 ms VCC decay time.
Can CY14B116N-BA25XI operate in Sleep mode?
No - Sleep mode (activated via ZZ pin) is only supported in the 165-ball FBGA package variant. The CY14B116N-BA25XI uses a 54-pin TSOP II package, which lacks the ZZ pin connection and internal sleep control logic; standby current remains at 650 µA minimum.
How does the HSB pin behave during a Software STORE?
During a Software STORE, HSB is driven LOW by the device for the duration of the STORE cycle (tSTW, typically 100 µs), then returns HIGH. This allows firmware to poll HSB or configure an interrupt-on-fall to synchronize post-STORE actions without fixed timing delays.
Is the CY14B116N-BA25XI compatible with 5 V systems?
No - it operates exclusively from 2.7 V to 3.6 V. Connecting to a 5 V bus will damage the device. Level-shifting is mandatory when interfacing with 5 V microcontrollers or FPGAs; TI SN74AVC4T245 or similar dual-supply translators are recommended for bidirectional DQ and control lines.
CY14B116N-BA25XI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 60-LFBGA
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 16Mbit
- Memory Organization:
- 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 25ns
- Access Time:
- 25 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 60-FBGA (10x18)
CY14B116N-BA25XI FAQ
1.How can I place an order for CY14B116N-BA25XI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY14B116N-BA25XI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY14B116N-BA25XI reliable?
The price and inventory of CY14B116N-BA25XI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY14B116N-BA25XI is usually 5 days.
3.What payment methods are accepted for CY14B116N-BA25XI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY14B116N-BA25XI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY14B116N-BA25XI?
CY14B116N-BA25XI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY14B116N-BA25XI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY14B116N-BA25XI?
For technical support, including CY14B116N-BA25XI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY14B116N-BA25XI requirements.
6.How does Aetrix verify that CY14B116N-BA25XI is sourced from the original manufacturer or authorized distributors?
All CY14B116N-BA25XI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY14B116N-BA25XI meets industry standards.
7.What is the process for return or replacement of CY14B116N-BA25XI?
All CY14B116N-BA25XI units undergo pre-shipment inspection (PSI). If there is an issue with CY14B116N-BA25XI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY14B116N-BA25XI part is unused and in its original packaging.
Return procedure for CY14B116N-BA25XI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY14B116N-BA25XI Tags
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