Cypress Semiconductor Corp CY14V101LA-BA45XI

Overview

CY14V101LA-BA45XI from Infineon Technologies (formerly Cypress) is a 1-Mbit non-volatile static RAM with QuantumTrap technology, organized as 128 K × 8, 25 ns access time, 3.0–3.6 V core supply, and 48-ball FBGA package. It performs automatic STORE on power loss using VCAP capacitor, supports software/hardware STORE/RECALL, and delivers 20-year data retention for industrial control logging and configuration backup.

For engineers reviewing the CY14V101LA-BA45XI datasheet, CY14V101LA-BA45XI pinout, CY14V101LA-BA45XI application, or CY14V101LA-BA45XI equivalent, key selection criteria include AutoStore timing under voltage droop, HSB-driven hardware STORE latency, SRAM-compatible read/write cycle compatibility, and dual-supply (VCC/VCCQ) interface requirements in space-constrained industrial systems.

Technical Context

This nvSRAM integrates parallel SRAM and QuantumTrap non-volatile cells per bit, enabling simultaneous infinite SRAM read/write cycles and up to 1 million STORE operations. The architecture decouples volatile operation from non-volatile persistence: STORE transfers all 131,072 bytes in parallel, while RECALL restores full contents at power-up without external intervention.

AutoStore triggers when VCC drops below VSWITCH (typ. 2.7 V), disconnecting VCAP and initiating STORE using stored charge. HSB serves dual role - input to request hardware STORE, and open-drain output indicating busy status during STORE/RECALL - with tHHHD (50 ns max) high-pulse after completion and internal 100 kΩ pull-up.

Key Specifications

Pinout & Package

Package: 48-ball fine-pitch ball grid array (FBGA), 6 mm × 8 mm, 0.8 mm pitch, RoHS-compliant, lead-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar non-volatile SRAM applications.

Compared with FM24V10-G and AS1010-45S, CY14V101LA-BA45XI uniquely combines SRAM-speed access, capacitor-assisted autonomous STORE, and 1-million-cycle endurance - making it optimal for industrial systems requiring guaranteed data capture during unpredictable power faults without firmware or external component changes.

Availability

CY14V101LA-BA45XI is available at Aetrix Electronics and suitable for industrial PLC configuration storage, smart meter firmware backup, and medical diagnostic equipment settings requiring stable component supply and long-term lifecycle support.

Supply support for CY14V101LA-BA45XI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and memory solutions with strong industrial and automotive qualifications.

CY14V101LA-BA45XI belongs to Infineon's nvSRAM product line, designed specifically for mission-critical industrial and infrastructure applications where data persistence must be guaranteed without batteries, supercaps, or complex power-fail supervision circuits.

FAQ

What is the minimum VCAP capacitance required for reliable AutoStore operation?

The datasheet specifies a nominal 0.1 µF ceramic capacitor on VCAP, rated for ≥10 V and placed within 5 mm of the package. This value ensures sufficient charge to complete one STORE cycle when VCC collapses from 3.3 V to VSWITCH (2.7 V). Larger values do not improve reliability but may increase power-up delay due to charging time.

Can CY14V101LA-BA45XI operate with VCCQ = 1.8 V while VCC = 3.3 V?

Yes - VCCQ operates independently from 1.65 V to 1.95 V, and VCC from 3.0 V to 3.6 V. Using 1.8 V for VCCQ enables direct connection to 1.8 V microcontroller data buses while maintaining full 3.3 V SRAM performance and QuantumTrap programming voltage margin.

How does the device prevent unintended STORE during power-up or noise transients?

The device implements write-latch validation: AutoStore and Hardware STORE are ignored unless at least one SRAM write has occurred since the last STORE or RECALL. Additionally, HSB requires a clean LOW pulse >100 ns with defined slew rate, and internal filtering rejects sub-50 ns glitches on the HSB pin.

Is software RECALL supported, or is it power-up only?

RECALL is initiated exclusively at power-up when VCC exceeds VSWITCH - there is no software-controlled RECALL command. However, software STORE is fully supported via a documented 6-cycle address sequence, allowing controlled non-volatile save independent of power conditions.