Cypress Semiconductor Corp CY62126EV30LL-55BVXE
- Part No.:
- CY62126EV30LL-55BVXE
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY62126EV30LL-55BVXE.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:

- Shipping:

Inventory:945
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Product details
Overview
CY62126EV30LL-55BVXE from Cypress Semiconductor is a 1-Mbit (64K × 16) CMOS static RAM with 55 ns access time, 2.2–3.6 V supply range, and industrial temperature rating (–40 °C to +85 °C). It features ultra-low standby current (max 4 µA), automatic CE-controlled power-down, and byte-wide I/O (I/O0–I/O7 and I/O8–I/O15) for portable memory expansion in battery-constrained systems.
For engineers reviewing the CY62126EV30LL-55BVXE datasheet, CY62126EV30LL-55BVXE pinout, CY62126EV30LL-55BVXE application, or CY62126EV30LL-55BVXE equivalent, this SRAM delivers verified low-power operation, pin-compatible upgrade path from CY62126DV30, and dual-package support (48-ball VFBGA / 44-pin TSOP II) for space- and thermal-sensitive designs.
Technical Context
The CY62126EV30LL-55BVXE implements a full CMOS 64K × 16 asynchronous SRAM array with independent byte enable (BHE/ BLE) control, enabling selective 8-bit writes without disturbing adjacent bytes. Its automatic power-down logic activates when CE is HIGH and address lines are stable, reducing ICC to ≤4 µA.
Read and write operations are fully asynchronous and controlled by CE, OE, WE, and byte enables. Output drivers enter high-impedance state during deselection (CE HIGH), OE HIGH, or write cycles (WE LOW), ensuring clean bus sharing in multi-device systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 64K words × 16 bits - supports 128 KB of byte-accessible data storage with dual 8-bit I/O banks |
| Access Time | 55 ns - guarantees deterministic read latency under industrial temperature and 3.6 V VCC conditions |
| Supply Voltage Range | 2.2 V to 3.6 V - compatible with single-supply 2.5 V and 3.3 V logic domains without level shifting |
| Standby Current (ISB2) | Max 4 µA at 3.6 V - enables >1-year battery life in always-on backup memory applications |
| Active Current (ICC) | Typ 1.3 mA at 1 MHz - balances speed and power for burst-mode portable data buffering |
| Operating Temperature | –40 °C to +85 °C - qualified for industrial-grade embedded control and instrumentation |
| Data Retention Voltage | Min 1.5 V - maintains stored data during brown-out or sleep-mode VCC droop |
Pinout & Package
Package: 48-ball Very Fine Pitch Ball Grid Array (VFBGA), 6 × 8 mm, 0.5 mm pitch, bottom-side solder balls.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A15 | Address Inputs | 16-bit address bus selecting one of 64K memory locations; TTL/CMOS compatible |
| I/O0–I/O7 | Byte Low Data I/O | Bi-directional 8-bit data path enabled only when BLE = LOW; high-impedance when disabled |
| I/O8–I/O15 | Byte High Data I/O | Bi-directional 8-bit data path enabled only when BHE = LOW; isolated from I/O0–I/O7 |
| CE | Chip Enable | Active-LOW global select; forces automatic power-down and high-Z outputs when HIGH |
| OE | Output Enable | Active-LOW read control; disables outputs (high-Z) when HIGH, independent of CE state |
| WE | Write Enable | Active-LOW write strobe; initiates write when CE and WE both LOW and BHE/ BLE asserted |
| BLE | Byte Low Enable | Active-LOW control for lower byte (I/O0–I/O7); allows partial-word writes without read-modify-write |
| BHE | Byte High Enable | Active-LOW control for upper byte (I/O8–I/O15); enables independent 8-bit write granularity |
| VCC | Power Supply | Single 2.2–3.6 V supply; decoupling required within 10 mm of VFBGA corner balls |
| VSS | Ground | Two dedicated ground balls (pins E1, H5) minimize switching noise and improve signal integrity |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low standby power | Max 4 µA ISB2 ensures minimal battery drain during system sleep-critical for handheld medical and IoT edge nodes |
| Automatic CE power-down | Hardware-triggered transition to sub-µA retention mode when CE is deasserted and addresses stable |
| Independent byte write control | BHE/ BLE pins allow true 8-bit writes without external logic or read-modify-write overhead |
| High-speed 55 ns access | Meets real-time response requirements for microcontroller-based data logging and buffer management |
| Pb-free VFBGA package | 48-ball VFBGA (6 × 8 mm) supports high-density PCB layouts and automated reflow assembly |
Applications
| Portable Medical Monitor | Industrial PLC Data Logger |
|---|---|
|
Use Scenario: Continuous acquisition of ECG waveforms at 1 kS/s with on-device buffering before wireless upload. IC Role / Device Role / Timing Role: Asynchronous SRAM buffer storing 128 KB of raw sensor data; accessed via MCU GPIO-banked parallel interface. Use Value: 55 ns access enables real-time capture without CPU wait states; 4 µA standby extends battery life beyond 18 months. |
Use Scenario: Local storage of machine cycle timestamps, fault codes, and process variables during factory floor downtime. IC Role / Device Role / Timing Role: Non-volatile shadow RAM holding critical runtime data during AC power loss or firmware update. Use Value: 1.5 V data retention voltage allows safe holdover during brown-out; byte-enable writes reduce EEPROM wear. |
| Wireless Sensor Node | Automotive Infotainment UI Cache |
|
Use Scenario: Aggregating environmental readings (temp/humidity/pressure) over 24-hour intervals before BLE transmission. IC Role / Device Role / Timing Role: Low-power SRAM acting as burst-write buffer between sensor hub and radio subsystem. Use Value: 1.3 mA active current at 1 MHz matches intermittent sampling duty cycle; VFBGA footprint saves board area. |
Use Scenario: Caching frequently accessed UI assets (icons, fonts, menu trees) in head-unit display controller. IC Role / Device Role / Timing Role: Fast-access parallel memory co-located with display processor for zero-latency asset fetch. Use Value: 55 ns read cycle eliminates visual stutter during menu navigation; 2.2–3.6 V range aligns with automotive 3.3 V rail. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS62WV51216BLL-55NLI | Same 64K × 16 organization, 55 ns speed, but max ISB = 15 µA (vs. 4 µA); 44-pin TSOP II only | Lacks VFBGA option; higher standby current limits battery life in always-on nodes | Select when TSOP II mounting is preferred and standby current <10 µA is acceptable |
| Cypress CY62126DV30LL-55ZSXI | Pin-compatible predecessor; same speed and voltage, but higher ISB (max 12 µA) and no MoBL® low-power enhancements | Not qualified for extended temperature; unsuitable for industrial ambient extremes | Choose only for legacy design continuity where power budget permits 3× higher standby draw |
Compared with IS62WV51216BLL-55NLI and CY62126DV30LL-55ZSXI, the CY62126EV30LL-55BVXE delivers the lowest verified standby current (4 µA), VFBGA packaging for compact layouts, and industrial temperature qualification-making it optimal for next-generation portable and ruggedized systems.
Availability
CY62126EV30LL-55BVXE is available at Aetrix Electronics and suitable for portable medical monitors, industrial PLC data loggers, wireless sensor nodes, and automotive infotainment UI caches requiring stable component supply across long production lifecycles.
Supply support for CY62126EV30LL-55BVXE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and consumer electronics.
The MoBL® (More Battery Life) SRAM product line targets ultra-low-power portable systems, emphasizing sub-µA standby, wide VCC tolerance, and robust data retention down to 1.5 V.
FAQ
What is the minimum VCC required to retain data in CY62126EV30LL-55BVXE?
The device guarantees data retention down to VCC = 1.5 V, as specified in the Data Retention Characteristics table. At this voltage, ICCDR remains ≤3 µA under industrial conditions. This enables reliable holdover during brown-out events or deep-sleep modes without external backup capacitors.
Can CY62126EV30LL-55BVXE operate with mixed 2.5 V and 3.3 V I/O interfaces?
No-CY62126EV30LL-55BVXE uses a single VCC supply (2.2–3.6 V) for both core logic and I/O buffers. All inputs and outputs are referenced to this rail; interfacing with 2.5 V or 3.3 V systems requires matching VCC to the host logic voltage, not mixed-rail operation.
How does automatic power-down activate, and what signals must be stable?
Automatic power-down engages when CE is HIGH and all address inputs (A0–A15) remain static for ≥tPD (55 ns). Input pins OE, WE, BHE, and BLE may float or be held HIGH/LOW-the key condition is CE HIGH plus non-toggling addresses.
Is the 48-ball VFBGA package RoHS-compliant and lead-free?
Yes-the "BVXE" suffix denotes a Pb-free, RoHS-compliant 48-ball VFBGA package with NiPdAu surface finish. It meets JEDEC J-STD-020D moisture sensitivity level 3 and supports standard lead-free reflow profiles (peak 260 °C).
CY62126EV30LL-55BVXE Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- MOBL™
- Package/Case:
- 48-VFBGA
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 1Mbit
- Memory Organization:
- 64K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY62126EV30LL-55BVXE FAQ
1.How can I place an order for CY62126EV30LL-55BVXE through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62126EV30LL-55BVXE on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62126EV30LL-55BVXE reliable?
The price and inventory of CY62126EV30LL-55BVXE are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62126EV30LL-55BVXE is usually 5 days.
3.What payment methods are accepted for CY62126EV30LL-55BVXE?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62126EV30LL-55BVXE transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62126EV30LL-55BVXE?
CY62126EV30LL-55BVXE orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62126EV30LL-55BVXE order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62126EV30LL-55BVXE?
For technical support, including CY62126EV30LL-55BVXE datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62126EV30LL-55BVXE requirements.
6.How does Aetrix verify that CY62126EV30LL-55BVXE is sourced from the original manufacturer or authorized distributors?
All CY62126EV30LL-55BVXE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62126EV30LL-55BVXE meets industry standards.
7.What is the process for return or replacement of CY62126EV30LL-55BVXE?
All CY62126EV30LL-55BVXE units undergo pre-shipment inspection (PSI). If there is an issue with CY62126EV30LL-55BVXE, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62126EV30LL-55BVXE part is unused and in its original packaging.
Return procedure for CY62126EV30LL-55BVXE:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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