Cypress Semiconductor Corp CY621282BNLL-70SXET

Overview

CY621282BNLL-70SXET from Cypress Semiconductor is an automotive-grade 1-Mbit (128 K × 8) CMOS static RAM with -40 °C to +125 °C operation, 70 ns access time, 4.5–5.5 V supply range, and automatic CE-controlled power-down. It serves as nonvolatile data buffer in engine control units, ADAS domain controllers, and infotainment memory subsystems requiring deterministic timing and low standby current.

For engineers reviewing the CY621282BNLL-70SXET datasheet, CY621282BNLL-70SXET pinout, CY621282BNLL-70SXET application, or CY621282BNLL-70SXET equivalent, key selection criteria include its dual chip enable architecture (CE1 active-low / CE2 active-high), TTL-compatible I/O, 25 µA max ISB2 standby current at 5.5 V, and Pb-free 32-pin SOIC package with 450-mil width.

Technical Context

The CY621282BNLL-70SXET implements a fully static 128K × 8 memory array with asynchronous parallel interface. Its dual CE logic enables flexible hierarchical memory expansion-CE1 and CE2 jointly determine chip select state, while OE controls output tristate independently of WE.

Power management relies on automatic hardware power-down: when CE1 is HIGH or CE2 is LOW, ICC drops to ≤25 µA (ISB2) without external control. Read/write timing is defined by overlapping CE, OE, and WE transitions, with tRC = 70 ns, tDOE = 35 ns, and tPD = 70 ns for full deselect-to-power-down latency.

Key Specifications

Pinout & Package

Package: 32-pin Small Outline Integrated Circuit (SOIC), 450 mil width, Pb-free, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS61LV12816AL-10TLI and AS6C1008-70TIN, the CY621282BNLL-70SXET uniquely delivers automotive-grade reliability (-40 to +125 °C), dual-voltage CE logic for scalable memory maps, and sub-30 µA standby current-making it the only option qualified for safety-critical ECU and ADAS memory buffering.

Availability

CY621282BNLL-70SXET is available at Aetrix Electronics and suitable for engine control units, ADAS domain controllers, and telematics control units requiring stable component supply across automotive production lifecycles.

Supply support for CY621282BNLL-70SXET includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability semiconductor solutions for automotive, industrial, and IoT applications, with emphasis on functional safety and long-term supply stability.

The MoBL® Automotive SRAM product line targets mission-critical automotive subsystems requiring guaranteed data integrity, extended temperature operation, and AEC-Q100 compliance-specifically engineered for ECU, ADAS, and body electronics memory buffering.

FAQ

Is CY621282BNLL-70SXET AEC-Q100 qualified?

Yes. The CY621282BNLL-70SXET is AEC-Q100 qualified for Automotive Grade E (–40 °C to +125 °C ambient), with full qualification testing including HTOL, TC, UHAST, and ESD per AEC-Q100 Rev-H requirements. Test reports are available under NDA from Infineon.

What is the maximum clock frequency supported for burst reads?

The CY621282BNLL-70SXET is an asynchronous SRAM with no internal clock. Its 70 ns tRC limits sustained random-access throughput to approximately 14.3 MHz. For burst transfers, consecutive address accesses achieve effective bandwidth up to 114 MB/s (8 bits × 14.3 MHz), constrained only by external controller timing margins.

Can CE1 and CE2 be tied together for simplified interface?

No. CE1 is active-low and CE2 is active-high; tying them directly creates a permanent deselect condition. To simplify decoding, CE2 may be hardwired HIGH (via pull-up) and CE1 used as sole chip enable-but this forfeits the hierarchical expansion capability and requires external pull-up resistor design per automotive reliability standards.

Does the device retain data during cold cranking (battery drop to 6 V)?

Yes. At VCC ≥ 2.0 V, the CY621282BNLL-70SXET guarantees data retention with ICCDR ≤ 25 µA. During cold cranking where battery voltage dips to 6 V for ≤100 ms, the device remains powered above retention threshold and preserves all stored contents without corruption.