Cypress Semiconductor Corp CY62136FV30LL-45ZSXA

Overview

CY62136FV30LL-45ZSXA from Cypress Semiconductor is a 2-Mbit (128 K × 16) CMOS static RAM with 45 ns access time, 2.2–3.6 V supply range, and ultra-low standby current (1 µA typical). It operates across –40 °C to +85 °C (Industrial/Auto-A grade) and uses byte-wide I/O control via BHE/ BLE for efficient memory expansion in portable embedded systems.

For engineers reviewing the CY62136FV30LL-45ZSXA datasheet, CY62136FV30LL-45ZSXA pinout, CY62136FV30LL-45ZSXA application, or CY62136FV30LL-45ZSXA equivalent, key selection criteria include its MoBL® low-power architecture, VFBGA/TSOP II package compatibility, automatic CE power-down behavior, and pin-level interoperability with CY62136V and CY62136EV30 series.

Technical Context

This SRAM implements a 128K × 16-bit array with independent high- and low-byte enables (BHE/BLE), enabling selective 8-bit writes without read-modify-write cycles. Its CMOS design delivers deterministic timing under varying VCC (2.2–3.6 V) and temperature (–40 °C to +85 °C), with guaranteed tRC = 45 ns and tAA = 45 ns at VCC = 3.0 V.

The device supports three power states: active (ICC ≤ 18 mA max), automatic CE power-down (ISB1 ≤ 5 µA), and data retention (ICCDR ≤ 4 µA at VCC = 1.5 V). Output tristate control is managed by CE, OE, BHE, and BLE - all inputs must meet CMOS voltage thresholds to guarantee ISB1/ISB2 compliance.

Key Specifications

Pinout & Package

Package: 48-ball VFBGA (6 mm × 8 mm, 0.5 mm pitch), RoHS-compliant, thermal resistance θJA = 75 °C/W (still air).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS62WV12816BLL-45NLI and NVTFS25616LDE, CY62136FV30LL-45ZSXA uniquely balances ultra-low standby power (1 µA), VFBGA density, and full 2.2–3.6 V operation - making it optimal for space-constrained, battery-sensitive designs where true volatility is acceptable and voltage flexibility is critical.

Availability

CY62136FV30LL-45ZSXA is available at Aetrix Electronics and suitable for wireless sensor nodes, automotive telematics modules, industrial HMIs, and portable medical devices requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for CY62136FV30LL-45ZSXA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and microcontroller solutions for embedded, automotive, and industrial applications, with emphasis on low-power innovation and reliability.

The CY62136FV30 belongs to the MoBL® (More Battery Life) SRAM product line, engineered specifically for portable and energy-harvesting systems where sub-microamp standby current and rapid wake-up from deep sleep are essential design requirements.

FAQ

What is the minimum VCC required to retain data in CY62136FV30LL-45ZSXA?

The device guarantees data retention down to VCC = 1.5 V, as specified in the Data Retention Characteristics table. At this voltage, ICCDR remains ≤ 4 µA under Industrial/Auto-A conditions. This enables operation during brown-out events or battery sag without data loss, provided CE and byte enables are held at valid CMOS levels.

Does CY62136FV30LL-45ZSXA support true 8-bit writes without read-modify-write?

Yes. Independent Byte High Enable (BHE) and Byte Low Enable (BLE) inputs allow selective activation of I/O8–I/O15 or I/O0–I/O7 during write cycles. When only one byte enable is asserted LOW while CE and WE are active, only that 8-bit segment is updated - eliminating read-modify-write overhead and reducing write latency by up to 40%.

Can CY62136FV30LL-45ZSXA be used in automotive applications beyond AEC-Q100 Grade 2?

Yes. The CY62136FV30LL variant is qualified for Automotive-E grade (–40 °C to +125 °C), exceeding AEC-Q100 Grade 2 (–40 °C to +105 °C) requirements. Its ISB2 ≤ 20 µA and tRC = 55 ns at +125 °C make it suitable for under-hood telematics and ADAS subsystems where extended temperature operation is mandatory.

How does automatic CE power-down differ from standard standby mode?

Automatic CE power-down activates when CE is HIGH *and* address lines are static (no toggling), reducing ICC by >90% compared to active mode. Standard standby (CE HIGH, dynamic addresses) draws slightly more current. Both modes place I/Os in high-Z, but only automatic power-down leverages internal address monitoring to gate internal clocks - a feature absent in basic SRAMs.