Cypress Semiconductor Corp CY62136FV30LL-45ZSXAT

Overview

CY62136FV30LL-45ZSXAT from Cypress Semiconductor is a 2-Mbit (128 K × 16) CMOS static RAM with 45 ns access time, 2.2–3.6 V supply range, and industrial/automotive-A temperature rating (–40 °C to +85 °C). It delivers ultra-low standby current (1 µA typical), supports byte-level write control via BHE/ BLE, and features automatic power-down on address inactivity - enabling extended battery life in portable telecom and embedded systems.

For engineers reviewing the CY62136FV30LL-45ZSXAT datasheet, CY62136FV30LL-45ZSXAT pinout, CY62136FV30LL-45ZSXAT application, or CY62136FV30LL-45ZSXAT equivalent, key selection criteria include its 48-ball VFBGA package, 16-bit data bus width, CE/OE/BHE/ BLE control logic, low-voltage operation down to 2.2 V, and verified MoBL® power efficiency for always-on edge devices.

Technical Context

This SRAM implements a synchronous, non-volatile-retention-free memory array organized as 128K words × 16 bits, using full CMOS design for optimal speed-power trade-off. Its dual-byte enable architecture (BHE/BLE) allows independent access to high- and low-byte lanes without external gating logic.

The device employs automatic CE-driven power-down mode that reduces active current by >90% during address stability and >99% when deselected (CE HIGH). All I/Os enter high-impedance state under CE HIGH, OE HIGH, or simultaneous BHE/BLE HIGH - ensuring clean bus sharing in multi-device systems.

Key Specifications

Pinout & Package

Supplied in Pb-free 48-ball very fine-pitch ball grid array (VFBGA) package with 0.5 mm pitch and 6 mm × 8 mm footprint. Pinout validated per Cypress Document 001-08402 Rev. *O Figure 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS62WV12816BLL-45NLI and AS6C4008-45TIN, the CY62136FV30LL-45ZSXAT uniquely combines 2.2 V operation, VFBGA packaging, and MoBL® standby current - making it the sole choice for space- and power-constrained portable designs requiring guaranteed industrial temperature performance.

Availability

CY62136FV30LL-45ZSXAT is available at Aetrix Electronics and suitable for cellular modem design, automotive display subsystems, and industrial data loggers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for CY62136FV30LL-45ZSXAT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance, low-power memory and programmable solutions for embedded systems, with headquarters in San Jose, CA.

The CY62136FV30 belongs to the MoBL® (More Battery Life™) SRAM product line, engineered specifically for portable and battery-operated applications where minimizing active and standby current is critical to runtime extension.

FAQ

What is the maximum clock frequency supported for read/write operations?

The CY62136FV30LL-45ZSXAT does not use a clock signal - it is an asynchronous SRAM. Its 45 ns access time supports reliable operation with microcontrollers or FPGAs running bus frequencies up to 22 MHz (1/45 ns ≈ 22.2 MHz), assuming proper setup/hold timing and signal integrity.

Can this SRAM retain data during complete power removal?

No. The CY62136FV30LL-45ZSXAT is a volatile static RAM and requires continuous VCC to retain data. For data retention during power loss, an external backup capacitor or nonvolatile memory (e.g., FRAM or EEPROM) must be used in conjunction with the device's low-ISB2 mode.

Is the 48-ball VFBGA package RoHS-compliant and lead-free?

Yes. The "Z" suffix in CY62136FV30LL-45ZSXAT explicitly denotes Pb-free (lead-free) construction per JEDEC J-STD-609, and the package meets RoHS Directive 2011/65/EU requirements with no exemptions applied.

How does the automatic power-down feature interact with CE and address stability?

Automatic power-down activates when CE is LOW but all address lines (A0–A16) remain stable for >100 ns. This reduces ICC by >90% without requiring software intervention. If CE goes HIGH, the device enters full standby (ISB2 ≤5 µA), regardless of address activity.