Cypress Semiconductor Corp CY62137EV30LL-45BVXI

Overview

CY62137EV30LL-45BVXI from Cypress Semiconductor is a 2-Mbit (128 K × 16) CMOS static RAM with 45 ns access time, 2.2 V–3.6 V supply voltage range, and ultra-low standby current (1 µA typical). It supports byte-level power-down via BHE/ BLE controls and operates in industrial temperature range (–40 °C to +85 °C), targeting battery-powered portable systems requiring fast, low-power memory.

For engineers reviewing the CY62137EV30LL-45BVXI datasheet, CY62137EV30LL-45BVXI pinout, CY62137EV30LL-45BVXI application, or CY62137EV30LL-45BVXI equivalent, key selection criteria include its 45 ns read cycle time, 128K × 16 organization, dual-byte enable architecture, VFBGA-48 package compatibility, and MoBL®-optimized active/standby current specs at 2.2–3.6 V.

Technical Context

The device implements a fully static CMOS SRAM array with independent high- and low-byte enables (BHE/BLE), enabling selective 8-bit writes without disturbing adjacent bytes. Its automatic power-down circuit reduces ICC by >90% when CE is HIGH or both BHE and BLE are HIGH, with guaranteed ISB2 ≤ 7 µA at 3.6 V.

Timing is defined by strict AC parameters including tRC = 45 ns, tDOE = 22 ns, and tHZOE ≤ 18 ns, all specified under 3 ns signal transition times and VCC/2 reference levels. The 48-ball VFBGA package supports fine-pitch PCB layouts while maintaining thermal resistance θJA = 54 °C/W on a 4-layer board.

Key Specifications

Pinout & Package

Package: 48-ball very fine-pitch ball grid array (VFBGA), 6 mm × 8 mm, 0.5 mm pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar 2-Mbit SRAM applications.

Compared with IS62WV12816BLL-45NLI and R1LV25616AS-45SI, CY62137EV30LL-45BVXI uniquely combines VFBGA-48 packaging, 1 µA standby current, and full industrial temperature range-making it the only choice for compact, battery-sensitive, thermally demanding embedded designs.

Availability

CY62137EV30LL-45BVXI is available at Aetrix Electronics and suitable for portable medical monitors, industrial HMI terminals, and wireless sensor gateways requiring stable component supply, long-term lifecycle support, and verified Pb-free compliance.

Supply support for CY62137EV30LL-45BVXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for embedded systems, with focus on low-power, mixed-signal integration, and automotive-grade qualification.

This device belongs to the MoBL® (More Battery Life™) SRAM product line, engineered specifically for ultra-low-power portable electronics where extended runtime and rapid wake-from-sleep response are critical design requirements.

FAQ

What is the minimum VCC required to retain data in CY62137EV30LL-45BVXI?

The device guarantees data retention down to VCC = 1.0 V when CE or both BHE and BLE are held HIGH, with ICCDR ≤ 3 µA maximum. This allows memory state preservation during brown-out conditions or ultra-low-power backup modes using auxiliary 1.2 V rails, provided address and data lines remain stable.

Can CY62137EV30LL-45BVXI operate reliably at 2.2 V with 45 ns timing?

Yes-the 45 ns access time is fully specified and tested across the entire 2.2 V–3.6 V range. Electrical characteristics tables confirm tRC = 45 ns, tAA = 45 ns, and tDOE = 22 ns are valid at VCC = 2.2 V, enabling direct interface with 2.5 V logic families without level shifting.

How does byte enable (BHE/BLE) affect power consumption during partial writes?

Asserting only one byte enable (e.g., BLE = LOW, BHE = HIGH) disables drivers for the unused 8-bit I/O segment, reducing dynamic switching current by ~45%. Measured active current drops from 2.0 mA (full 16-bit write) to 1.1 mA (single-byte write) at 1 MHz, extending battery life in sensor node firmware.

Is the 48-ball VFBGA package compatible with standard reflow profiles?

Yes-the package complies with JEDEC J-STD-020C moisture sensitivity level 3 and supports peak reflow temperatures up to 260 °C. Recommended profile includes ramp rate ≤3 °C/s, 60–120 s above 217 °C, and cooling rate ≤6 °C/s to ensure solder joint integrity and die attach reliability.