Cypress Semiconductor Corp CY62138FV30LL-45BVXI

Overview

CY62138FV30LL-45BVXI from Cypress Semiconductor is a 2-Mbit (256 K × 8) CMOS static RAM with 45 ns access time, 2.2–3.6 V supply voltage, and industrial/automotive-A temperature range (–40 °C to +85 °C). It delivers ultra-low standby current (1 µA typical), active current of 1.6 mA at 1 MHz, and automatic power-down on chip deselect-enabling battery-sensitive portable systems such as cellular handsets and handheld medical monitors.

For engineers reviewing the CY62138FV30LL-45BVXI datasheet, CY62138FV30LL-45BVXI pinout, CY62138FV30LL-45BVXI application, or CY62138FV30LL-45BVXI equivalent, key selection criteria include its dual CE architecture for hierarchical memory expansion, VFBGA-36 package compatibility, MoBL® low-power design, and guaranteed 45 ns read/write timing across full voltage and temperature range.

Technical Context

This SRAM implements a synchronous, non-volatile-retentive volatile memory array organized as 256 K words × 8 bits, using complementary metal-oxide-semiconductor (CMOS) process technology optimized for speed-power trade-off. Its dual chip enable (CE1/CE2) logic enables seamless bank selection in multi-SRAM systems without external decoding logic.

The device supports three operational modes: active read (CE1=LOW, CE2=HIGH, OE=LOW, WE=HIGH), active write (CE1=LOW, CE2=HIGH, WE=LOW), and automatic standby (CE1=HIGH or CE2=LOW), with all I/O pins entering high-impedance state during deselect or output disable-ensuring clean bus sharing in 8-bit microcontroller interfaces.

Key Specifications

Pinout & Package

Package: 36-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 5 mm × 6 mm body, 0.5 mm ball pitch, JEDEC MO-220 compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS62WV2568BLL-45NLI and AS6C4008-45TIN, CY62138FV30LL-45BVXI uniquely combines VFBGA miniaturization, dual CE expandability, 2.2 V operation, and 1 µA standby-making it optimal for next-gen portable and automotive edge devices where size, power, and voltage flexibility are co-constrained.

Availability

CY62138FV30LL-45BVXI is available at Aetrix Electronics and suitable for portable medical monitors, industrial PLC data buffers, and automotive infotainment display caches requiring stable component supply across extended product lifecycles.

Supply support for CY62138FV30LL-45BVXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance, low-power semiconductor solutions for embedded systems, automotive, and industrial markets.

The CY62138FV30 belongs to the MoBL® (More Battery Life™) SRAM product line, engineered specifically for portable and energy-constrained applications demanding sub-microamp standby current and fast, deterministic access without voltage or temperature derating.

FAQ

What is the minimum VCC required to retain data in CY62138FV30LL-45BVXI?

Data retention is guaranteed down to 1.5 V (VDR), with ICCDR current limited to 4 µA max at that voltage. This allows safe low-power hibernation during brown-out conditions while preserving memory contents-critical for fault logging in automotive ECUs and medical defibrillators.

Does CY62138FV30LL-45BVXI require external pull-up resistors on CE1 or CE2?

No external pull-ups are required: CE1 and CE2 are CMOS-compatible inputs with ±1 µA leakage, designed to interface directly with MCU GPIOs. Internal weak pull-downs are not present; system-level pull-up/pull-down must be implemented per board reset strategy and power-up sequencing requirements.

Can CY62138FV30LL-45BVXI operate reliably at 2.2 V and 85 °C simultaneously?

Yes-the device is fully characterized and guaranteed for 45 ns access time, 5 µA max standby current, and functional operation across the entire industrial/automotive-A range (2.2 V to 3.6 V, –40 °C to +85 °C), including corner-case combinations like 2.2 V/85 °C per AC and DC specifications in Rev. *N datasheet.

How does the dual CE architecture improve memory expansion versus single CE SRAMs?

Dual CE (CE1/CE2) allows direct use of A16 and A17 as chip-select lines-enabling up to four 256 KB banks with zero external logic. This reduces BOM cost, PCB area, and signal routing complexity compared to single-CE parts requiring discrete decoders or CPLDs for >256 KB systems.