Cypress Semiconductor Corp CY621472E30LL-45ZSXIT

Overview

CY621472E30LL-45ZSXIT from Infineon Technologies (formerly Cypress) is a 4-Mbit (256K × 16) CMOS static RAM with 45 ns access time, 2.2–3.6 V supply range, and industrial temperature rating (–40 °C to +85 °C). It features ultra-low standby current (7 µA max), byte power-down control via BHE/ BLE, and automatic CE-based power-down for portable battery-powered systems.

For engineers reviewing the CY621472E30LL-45ZSXIT datasheet, CY621472E30LL-45ZSXIT pinout, CY621472E30LL-45ZSXIT application, or CY621472E30LL-45ZSXIT equivalent, key selection criteria include TSOP II package compatibility, dual chip enable (CE1/CE2) logic, I/O byte masking capability, and sub-µA retention current at 1.5 V.

Technical Context

This SRAM implements a synchronous, non-volatile-retentive memory array organized as 256K words × 16 bits, using complementary metal oxide semiconductor (CMOS) process technology optimized for low active power (3.5 mA typical at 1 MHz) and fast random-access timing. Its dual chip enable architecture (CE1 LOW + CE2 HIGH for selection) enables flexible memory expansion in multi-bank systems.

The device supports independent byte write control through dedicated Byte High Enable (BHE) and Byte Low Enable (BLE) inputs, allowing selective 8-bit writes without disturbing adjacent data. Power-down is triggered automatically when CE1 is HIGH or CE2 is LOW-or when both BHE and BLE are HIGH-reducing ICC to ≤7 µA while maintaining data integrity.

Key Specifications

Pinout & Package

The CY621472E30LL-45ZSXIT is housed in a Pb-free 44-pin thin small outline package (TSOP II), 10.16 mm × 18.4 mm body size, 0.8 mm pitch, with gull-wing leads. Pin 1 is marked by a beveled corner.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS62WV25616BLL-45NLI and AS6C4008-45TIN, the CY621472E30LL-45ZSXIT provides superior integration via dual CE, true 16-bit × 256K organization, and hardware byte masking-reducing BOM count and eliminating glue logic in portable and space-constrained designs.

Availability

CY621472E30LL-45ZSXIT is available at Aetrix Electronics and suitable for cellular baseband memory, industrial HMI buffer, medical wearable sensor cache, and automotive telematics log buffer applications requiring stable component supply across extended product lifecycles.

Supply support for CY621472E30LL-45ZSXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, delivering power systems, sensors, and memory solutions for industrial, automotive, and IoT applications.

This device belongs to Infineon's MoBL™ (More Battery Life) SRAM product line, engineered specifically for ultra-low-power portable electronics where extended runtime and rapid wake-from-sleep response are critical design requirements.

FAQ

What is the minimum VCC required to retain data in CY621472E30LL-45ZSXIT?

The device guarantees data retention down to 1.5 V, as specified in the Data Retention Characteristics table. At this voltage, ICCDR remains ≤8.8 µA under industrial temperature conditions. Operation below 1.5 V risks data loss, even if the part remains powered - retention is not guaranteed outside the 1.5 V minimum spec.

Can CY621472E30LL-45ZSXIT operate reliably at 2.2 V across the full industrial temperature range?

Yes. The datasheet explicitly specifies 2.2 V as the minimum VCC for full industrial-range operation (–40 °C to +85 °C). All AC and DC parameters - including 45 ns access time and 7 µA max ISB2 - are validated at 2.2 V, 85 °C, confirming robust functionality at the lowest rated supply.

How does the dual CE (CE1/CE2) architecture improve memory expansion compared to single-CE SRAMs?

CE1 and CE2 provide active-LOW/active-HIGH pairing (CE1=LOW & CE2=HIGH selects), enabling direct hierarchical decoding without inverters. This simplifies multi-chip bank selection - e.g., using higher-order address bits to drive CE2 across multiple devices while sharing CE1 - reducing gate count and propagation delay in dense memory subsystems.

Is the TSOP II package (ZSXIT) RoHS-compliant and lead-free?

Yes. The "Z" in ZSXIT denotes a Pb-free (lead-free) finish, and the package complies with RoHS Directive 2011/65/EU. Infineon confirms this variant uses matte tin termination on gull-wing leads, with no exemptions applied - suitable for lead-free reflow soldering profiles up to 260 °C peak.