Cypress Semiconductor Corp CY62147G30-45ZSXI

Overview

CY62147G30-45ZSXI from Infineon Technologies (formerly Cypress) is a 4-Mbit MoBL® SRAM with embedded single-bit error-correcting code (ECC), organized as 256K × 16, operating at 45 ns access time across 2.2 V–3.6 V supply. It features TTL-compatible I/Os, ERR output for ECC event indication, and dual chip enable (CE1/CE2) logic. Used in industrial control modules requiring data integrity under extended temperature operation.

For engineers reviewing the CY62147G30-45ZSXI datasheet, CY62147G30-45ZSXI pinout, CY62147G30-45ZSXI application, or CY62147G30-45ZSXI equivalent, key selection criteria include ECC-enabled reliability, 45 ns timing at 3.0 V, ultra-low standby current (≤8.7 µA), and compatibility with 44-pin TSOP II footprint in industrial-grade environments.

Technical Context

This SRAM implements on-die ECC encoding/decoding logic that detects and corrects single-bit errors during read cycles, with ERR pin assertion indicating correction events. The device supports byte-level write control via BHE/ BLE and enters seamless standby when both byte enables are deasserted - independent of CE state.

It operates across three voltage ranges (1.65–2.2 V, 2.2–3.6 V, 4.5–5.5 V); the "30" suffix denotes the 2.2–3.6 V range and 45 ns speed grade. Pin configuration includes dual CE inputs (CE1 low / CE2 high), OE, WE, and 18 address lines (A0–A17) for 256K-word addressing.

Key Specifications

Pinout & Package

Package: 44-pin TSOP II (Type II, 400 mil width), RoHS-compliant, surface-mountable with standard reflow profile.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM-with-ECC applications.

Compared with IS61WV25616BLL-10MLI and N25S80-45G1I, CY62147G30-45ZSXI uniquely delivers hardware ECC with ERR signaling in a standard SRAM interface - enabling deterministic error recovery without performance penalty or added design complexity.

Availability

CY62147G30-45ZSXI is available at Aetrix Electronics and suitable for industrial automation, motor control, and rugged HMI applications requiring stable component supply, long-term lifecycle support, and guaranteed ECC functionality.

Supply support for CY62147G30-45ZSXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power systems, automotive ICs, and memory solutions acquired from Cypress Semiconductor.

CY62147G30-45ZSXI belongs to the MoBL® (Mobile Low-power) SRAM product line, designed specifically for industrial and embedded systems demanding low static power, wide voltage operation, and built-in data reliability - not general-purpose computing memory.

FAQ

Does CY62147G30-45ZSXI support automatic error correction without host intervention?

Yes. The device performs single-bit error detection and correction autonomously during every read cycle using on-die ECC logic. When correction occurs, the ERR pin asserts HIGH for one clock cycle. No host software or external circuitry is required to initiate or manage correction - it is fully transparent to the memory controller.

What is the function of the dual chip enable (CE1/CE2) interface?

CE1 is active-low and CE2 is active-high; both must be asserted simultaneously (CE1 = LOW, CE2 = HIGH) to enable the device. This dual-signal scheme improves noise immunity over single CE designs and allows hierarchical memory decoding in multi-chip systems - for example, using CE2 as a bank select and CE1 as a chip select within the bank.

Can CY62147G30-45ZSXI operate at 1.8 V?

No. The "30" suffix specifies the 2.2 V–3.6 V operating range. For 1.65 V–2.2 V operation, the correct part is CY62147G18-55ZSXI (55 ns grade). Attempting to power CY62147G30-45ZSXI below 2.2 V may result in timing violations, data corruption, or failure to meet AC specifications.

Is the ERR pin open-drain, and what pull-up value is recommended?

Yes, ERR is an open-drain output requiring an external pull-up resistor. Infineon recommends a 4.7 kΩ resistor to VCC (3.3 V) for reliable signal rise time and noise margin. The pin drives LOW only during error-correction events and remains high-impedance otherwise - allowing multiple ERR outputs to be wire-OR'd for system-level error monitoring.