Cypress Semiconductor Corp CY62147GE30-45BVXI

Overview

CY62147GE30-45BVXI from Infineon Technologies (formerly Cypress) is a 4-Mbit MoBL® SRAM with embedded single-bit error-correcting code (ECC), 256K × 16-bit organization, 45 ns access time, 1.65–2.2 V / 2.2–3.6 V / 4.5–5.5 V triple-voltage operation, and ERR output pin for real-time error indication. It serves as a fault-tolerant memory buffer in industrial controllers requiring data integrity under radiation-prone or long-life field conditions.

For engineers reviewing the CY62147GE30-45BVXI datasheet, CY62147GE30-45BVXI pinout, CY62147GE30-45BVXI application, or CY62147GE30-45BVXI equivalent, key selection criteria include ECC-enabled read reliability, dual-chip-enable support for banked memory systems, 3.5 µA typical standby current, and 48-ball VFBGA package compatibility with high-density PCB layouts.

Technical Context

This SRAM implements on-die ECC encoding/decoding logic that detects and corrects single-bit errors during every read cycle without external logic. The ERR pin asserts HIGH only when correction occurs - no automatic write-back is performed, preserving deterministic timing.

It supports three distinct V_CC ranges with voltage-specific timing and drive strength: 1.65–2.2 V (1.8 V typical), 2.2–3.6 V (3.0 V typical), and 4.5–5.5 V (5.0 V typical). Byte Power Down mode activates automatically when both BHE and BLE are deasserted, enabling sub-µA power state independent of CE status.

Key Specifications

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm, 0.5 mm pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Compared with IS61WV25616EDBLL-10MLI and AS6C4008-55ZIN, CY62147GE30-45BVXI uniquely delivers integrated ECC with real-time ERR feedback, triple-voltage flexibility, and 45 ns performance - making it the sole choice for applications demanding hardware-enforced data integrity without design-level trade-offs.

Availability

CY62147GE30-45BVXI is available at Aetrix Electronics and suitable for industrial PLCs, medical imaging subsystems, railway signaling controllers, and avionics data loggers requiring stable component supply across extended product lifecycles.

Supply support for CY62147GE30-45BVXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and memory solutions with strong industrial and safety-critical focus.

CY62147GE belongs to Infineon's MoBL® (Mobile Low-power) SRAM product line, engineered for high-reliability embedded systems where data integrity, ultra-low standby power, and multi-rail compatibility are mandatory design constraints.

FAQ

Does CY62147GE30-45BVXI support automatic error correction write-back?

No. The device performs single-bit error correction during read cycles and asserts the ERR pin, but does not automatically rewrite corrected data back to the memory array. Host firmware must manage any required write-back operations based on ERR assertion, preserving deterministic timing and avoiding unintended side effects.

What is the function of the Byte Power Down mode?

When both BHE and BLE are deasserted (HIGH), the device enters ultra-low-power standby mode regardless of CE1/CE2 state. This feature reduces current to ≤8.7 µA without requiring changes to chip-enable sequencing, enabling dynamic power gating in burst-mode memory access patterns.

Can CY62147GE30-45BVXI operate at 2.5 V?

Yes. The 2.2–3.6 V V_CC range explicitly includes 2.5 V operation. At this voltage, timing parameters are specified for 45 ns access (CY62147GE30), and DC characteristics such as VOH/VOL and VIH/VIL remain fully compliant per datasheet Table "DC Electrical Characteristics".

Is the ERR pin open-drain or push-pull?

The ERR pin is open-drain, requiring an external pull-up resistor to V_CC. Its output is HIGH only during active single-bit correction events; otherwise, it remains in high-impedance state. This allows wired-OR connection with other fault indicators and simplifies level-shifting in mixed-voltage systems.