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Cypress Semiconductor Corp CY62157EV30LL-45BVXA

Part No.:
CY62157EV30LL-45BVXA
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
48-VFBGA
Datasheet:
AetrixCY62157EV30LL-45BVXA.pdf
Description:
IC SRAM 8MBIT PARALLEL 48VFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:24,222

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Product details

Overview

CY62157EV30LL-45BVXA from Infineon Technologies (formerly Cypress) is a 8-Mbit CMOS static RAM organized as 512K × 16, operating at 45 ns access time over –40 °C to +85 °C industrial temperature range, with 2.2 V–3.6 V supply voltage and ultra-low standby current (2 µA typical). It serves as a low-power, pin-compatible SRAM replacement in portable embedded memory subsystems requiring battery longevity and fast random-access storage.

For engineers reviewing the CY62157EV30LL-45BVXA datasheet, CY62157EV30LL-45BVXA pinout, CY62157EV30LL-45BVXA application, or CY62157EV30LL-45BVXA equivalent, key selection criteria include its dual-configurable organization (512K × 16 / 1M × 8), automatic CE-driven power-down behavior, TSOP I package compatibility, and MoBL®-optimized active/standby current profile under real-world address stability conditions.

Technical Context

The device implements a high-density SRAM array with independent byte enable (BHE/ BLE) control for 16-bit data bus partitioning, supporting partial-word writes without full-word overhead. Its dual chip enable architecture (CE1/CE2) enables hierarchical memory banking and seamless expansion across multiple devices.

Power management is handled via hardware-triggered automatic power-down: when CE1 is HIGH or CE2 is LOW or both BHE and BLE are HIGH, the core enters standby mode with outputs tri-stated and ICCDR reduced to ≤8 µA. Address retention is guaranteed down to 1.5 V VCC during data retention mode.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density8 Mbit (512K × 16 or 1M × 8 configurable)
Access Time45 ns - guarantees worst-case read latency at full speed under industrial temp and 3.6 V VCC
Supply Voltage2.2 V–3.6 V - supports single-supply operation across Li-ion battery discharge profiles
Standby Current2 µA typical, 8 µA max - enables multi-year battery life in always-on sensor nodes
Active Current6 mA at 1 MHz - balances performance and power for burst-mode MCU interfaces
Operating Temp–40 °C to +85 °C - qualified for industrial and automotive-A environments
Data Retention VCC1.5 V min - allows memory state hold during brown-out or sleep-mode VCC scaling

Pinout & Package

Package: 48-pin Thin Small Outline Package (TSOP I), RoHS-compliant, surface-mountable with 0.5 mm pitch.

Pin/TerminalCircuit RoleDesign Meaning
A0–A18Address Inputs19-bit address bus supporting 512K word addressing; A19 unused in 512K×16 mode
I/O0–I/O15Bidirectional Data Bus16-bit parallel interface; I/O0–I/O7 controlled by BLE, I/O8–I/O15 by BHE
CE1, CE2Chip Enable InputsActive-LOW CE1 and active-HIGH CE2 form dual-enable logic for bank selection and power gating
OEOutput EnableControls output buffer enable; HIGH disables outputs, placing I/O pins in high-Z state
WEWrite EnableActive-LOW signal initiating write cycle; timing-critical for setup/hold compliance
BHE, BLEByte High/Low EnableSelective 8-bit write masking; enables partial writes without read-modify-write overhead
VCC, VSSPower SupplyDual VCC pins (pins 23, 48) reduce IR drop; dedicated VSS pins (pins 24, 47) improve noise immunity
NCNo ConnectPins 11, 22, 45, 46 - internally unconnected; must be left floating or tied to ground per layout guidelines

Key Features

FeatureDesign Value
MoBL® Ultra-Low Power ArchitectureReduces active current to 6 mA at 1 MHz and standby to 2 µA typical-enables >5-year coin-cell operation in metering endpoints
Configurable Memory OrganizationHardware-selectable 512K × 16 or 1M × 8 mode via BYTE pin tie-off-supports legacy 8-bit bus systems and modern 16-bit microcontrollers
Automatic Power-Down on DeselectEnters sub-µA retention state within 45 ns of CE/BHE/BLE deactivation-eliminates software-controlled sleep sequences
CMOS-Compatible Timing InterfaceMeets JEDEC-standard tRC, tAA, tDOE, and tHZOE specs at 45 ns-ensures plug-and-play integration with ARM Cortex-M and RISC-V SoCs
Robust Industrial QualificationRated for –40 °C to +85 °C with 2.2–3.6 V operation and 1.5 V data retention-validated for factory automation PLCs and motor drives

Applications

Industrial PLC Data BufferAutomotive Telematics Log Storage

Use Scenario: Real-time I/O scan buffering in programmable logic controllers where deterministic 45 ns read/write latency prevents scan cycle jitter.

IC Role / Device Role / Timing Role: Primary volatile data scratchpad for cyclic process image storage, interfaced directly to ARM9-based controller bus.

Use Value: 2 µA standby current extends backup supercapacitor hold-up time to >72 hours during AC loss; 512K × 16 configuration matches native bus width.

Use Scenario: Event-triggered crash log capture in automotive telematics control units, retaining last 10 seconds of CAN bus diagnostics before power interruption.

IC Role / Device Role / Timing Role: High-reliability non-volatile shadow RAM holding critical fault codes and vehicle state snapshots prior to EEPROM commit.

Use Value: 1.5 V data retention threshold ensures memory integrity during 12 V battery sag to 9 V; -40 °C to +85 °C rating covers under-hood thermal cycling.

Portable Medical Sensor HubSmart Energy Meter Firmware Cache

Use Scenario: Aggregating multi-channel ECG/SpO₂ waveform samples in handheld diagnostic devices powered by CR2032 coin cells.

IC Role / Device Role / Timing Role: Low-leakage buffer memory staging raw ADC data before Bluetooth LE transmission bursts.

Use Value: 6 mA active current at 1 MHz enables 10 kSPS sampling with <1% duty-cycle active time-extending battery life to 18 months.

Use Scenario: Caching firmware update payloads and tariff tables in Class 0.5S electricity meters deployed in tropical climates with wide ambient swings.

IC Role / Device Role / Timing Role: Secure, fast-access working memory for AES-128 decryption engine and real-time tariff calculation engine.

Use Value: TSOP I package withstands 1000+ thermal cycles per JEDEC J-STD-020; 45 ns access meets 20 MHz MCU bus timing budgets.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed, low-power SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IS61WV51216BLL-10MLI10 ns faster access (35 ns), but higher standby current (15 µA typ) and narrower voltage range (2.7–3.6 V)Preferred in high-throughput test equipment where speed dominates power budgetSelect only if system requires sub-40 ns latency and can tolerate reduced battery life and no 2.2 V operation
CY62157DV30LL-45BVXISame pinout and timing, but lacks Automotive-E grade (-40 °C to +125 °C) qualification and has higher ISB2 (12 µA max)Suitable for cost-sensitive consumer electronics where extended temperature is not requiredChoose for legacy designs migrating from CY62157DV30; verify thermal margin in enclosed enclosures

Compared with IS61WV51216BLL-10MLI and CY62157DV30LL-45BVXI, the CY62157EV30LL-45BVXA uniquely delivers 45 ns performance with 2.2 V minimum operation and 2 µA standby current-making it optimal for battery-constrained industrial edge nodes requiring wide voltage tolerance and long-term reliability.

Availability

CY62157EV30LL-45BVXA is available at Aetrix Electronics and suitable for industrial PLC data buffering, automotive telematics log storage, and portable medical sensor hubs requiring stable component supply across extended product lifecycles.

Supply support for CY62157EV30LL-45BVXA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensing, and connectivity solutions for industrial, automotive, and IoT markets.

This device belongs to the MoBL® (More Battery Life) SRAM product line, engineered specifically for ultra-low-power embedded systems where extended battery runtime and reliable operation across wide voltage and temperature ranges are critical design requirements.

FAQ

What is the function of the BYTE pin on CY62157EV30LL-45BVXA?

The BYTE pin is present only in the 48-pin TSOP I package and determines memory organization mode: tied HIGH configures the device as 512K × 16; tied LOW enables 1M × 8 mode, repurposing pin 45 as A19 and disabling BHE/BLE and I/O8–I/O14. In TSOP II and VFBGA packages, this pin is absent and the device operates exclusively in 512K × 16 mode.

Can CY62157EV30LL-45BVXA operate reliably at 2.2 V?

Yes-the device is fully specified from 2.2 V to 3.6 V, with all AC and DC parameters guaranteed across this range. At 2.2 V, tRC remains 45 ns (max), ISB2 stays ≤8 µA, and VIH/VIL thresholds scale proportionally. This enables direct integration with partially discharged Li-ion batteries (3.0 V nominal) without LDO regulation.

How does automatic power-down activate, and what is its recovery time?

Automatic power-down triggers when CE1 is HIGH or CE2 is LOW or both BHE and BLE are HIGH. Recovery to full operation requires tPU = 0 ns (no delay), and valid data appears after tAA = 45 ns from address assertion. The device exits retention mode immediately upon CE activation, with no software initialization needed.

Is CY62157EV30LL-45BVXA pin-compatible with CY62157DV30LL-45BVXI?

Yes-both share identical 48-pin TSOP I footprint, pin functions, and AC/DC specifications. Differences are limited to internal process enhancements: CY62157EV30 adds Automotive-E grade support and reduces ISB2 from 12 µA to 8 µA max, while maintaining full backward compatibility in industrial and automotive-A applications.

CY62157EV30LL-45BVXA Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
MOBL™
Package/Case:
48-VFBGA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
8Mbit
Memory Organization:
512K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
45ns
Access Time:
45 ns
Voltage - Supply:
2.2V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-VFBGA (6x8)

CY62157EV30LL-45BVXA FAQ

1.How can I place an order for CY62157EV30LL-45BVXA through Aetrix?

Please submit a Request for Quotation (RFQ) for CY62157EV30LL-45BVXA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY62157EV30LL-45BVXA reliable?

The price and inventory of CY62157EV30LL-45BVXA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62157EV30LL-45BVXA is usually 5 days.

3.What payment methods are accepted for CY62157EV30LL-45BVXA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62157EV30LL-45BVXA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY62157EV30LL-45BVXA?

CY62157EV30LL-45BVXA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY62157EV30LL-45BVXA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY62157EV30LL-45BVXA?

For technical support, including CY62157EV30LL-45BVXA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62157EV30LL-45BVXA requirements.

6.How does Aetrix verify that CY62157EV30LL-45BVXA is sourced from the original manufacturer or authorized distributors?

All CY62157EV30LL-45BVXA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62157EV30LL-45BVXA meets industry standards.

7.What is the process for return or replacement of CY62157EV30LL-45BVXA?

All CY62157EV30LL-45BVXA units undergo pre-shipment inspection (PSI). If there is an issue with CY62157EV30LL-45BVXA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY62157EV30LL-45BVXA part is unused and in its original packaging.

Return procedure for CY62157EV30LL-45BVXA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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