Cypress Semiconductor Corp CY62157EV30LL-45BVXA
- Part No.:
- CY62157EV30LL-45BVXA
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY62157EV30LL-45BVXA.pdf
- Description:
- IC SRAM 8MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:

- Shipping:

Inventory:24,222
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY62157EV30LL-45BVXA from Infineon Technologies (formerly Cypress) is a 8-Mbit CMOS static RAM organized as 512K × 16, operating at 45 ns access time over –40 °C to +85 °C industrial temperature range, with 2.2 V–3.6 V supply voltage and ultra-low standby current (2 µA typical). It serves as a low-power, pin-compatible SRAM replacement in portable embedded memory subsystems requiring battery longevity and fast random-access storage.
For engineers reviewing the CY62157EV30LL-45BVXA datasheet, CY62157EV30LL-45BVXA pinout, CY62157EV30LL-45BVXA application, or CY62157EV30LL-45BVXA equivalent, key selection criteria include its dual-configurable organization (512K × 16 / 1M × 8), automatic CE-driven power-down behavior, TSOP I package compatibility, and MoBL®-optimized active/standby current profile under real-world address stability conditions.
Technical Context
The device implements a high-density SRAM array with independent byte enable (BHE/ BLE) control for 16-bit data bus partitioning, supporting partial-word writes without full-word overhead. Its dual chip enable architecture (CE1/CE2) enables hierarchical memory banking and seamless expansion across multiple devices.
Power management is handled via hardware-triggered automatic power-down: when CE1 is HIGH or CE2 is LOW or both BHE and BLE are HIGH, the core enters standby mode with outputs tri-stated and ICCDR reduced to ≤8 µA. Address retention is guaranteed down to 1.5 V VCC during data retention mode.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 8 Mbit (512K × 16 or 1M × 8 configurable) |
| Access Time | 45 ns - guarantees worst-case read latency at full speed under industrial temp and 3.6 V VCC |
| Supply Voltage | 2.2 V–3.6 V - supports single-supply operation across Li-ion battery discharge profiles |
| Standby Current | 2 µA typical, 8 µA max - enables multi-year battery life in always-on sensor nodes |
| Active Current | 6 mA at 1 MHz - balances performance and power for burst-mode MCU interfaces |
| Operating Temp | –40 °C to +85 °C - qualified for industrial and automotive-A environments |
| Data Retention VCC | 1.5 V min - allows memory state hold during brown-out or sleep-mode VCC scaling |
Pinout & Package
Package: 48-pin Thin Small Outline Package (TSOP I), RoHS-compliant, surface-mountable with 0.5 mm pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | 19-bit address bus supporting 512K word addressing; A19 unused in 512K×16 mode |
| I/O0–I/O15 | Bidirectional Data Bus | 16-bit parallel interface; I/O0–I/O7 controlled by BLE, I/O8–I/O15 by BHE |
| CE1, CE2 | Chip Enable Inputs | Active-LOW CE1 and active-HIGH CE2 form dual-enable logic for bank selection and power gating |
| OE | Output Enable | Controls output buffer enable; HIGH disables outputs, placing I/O pins in high-Z state |
| WE | Write Enable | Active-LOW signal initiating write cycle; timing-critical for setup/hold compliance |
| BHE, BLE | Byte High/Low Enable | Selective 8-bit write masking; enables partial writes without read-modify-write overhead |
| VCC, VSS | Power Supply | Dual VCC pins (pins 23, 48) reduce IR drop; dedicated VSS pins (pins 24, 47) improve noise immunity |
| NC | No Connect | Pins 11, 22, 45, 46 - internally unconnected; must be left floating or tied to ground per layout guidelines |
Key Features
| Feature | Design Value |
|---|---|
| MoBL® Ultra-Low Power Architecture | Reduces active current to 6 mA at 1 MHz and standby to 2 µA typical-enables >5-year coin-cell operation in metering endpoints |
| Configurable Memory Organization | Hardware-selectable 512K × 16 or 1M × 8 mode via BYTE pin tie-off-supports legacy 8-bit bus systems and modern 16-bit microcontrollers |
| Automatic Power-Down on Deselect | Enters sub-µA retention state within 45 ns of CE/BHE/BLE deactivation-eliminates software-controlled sleep sequences |
| CMOS-Compatible Timing Interface | Meets JEDEC-standard tRC, tAA, tDOE, and tHZOE specs at 45 ns-ensures plug-and-play integration with ARM Cortex-M and RISC-V SoCs |
| Robust Industrial Qualification | Rated for –40 °C to +85 °C with 2.2–3.6 V operation and 1.5 V data retention-validated for factory automation PLCs and motor drives |
Applications
| Industrial PLC Data Buffer | Automotive Telematics Log Storage |
|---|---|
Use Scenario: Real-time I/O scan buffering in programmable logic controllers where deterministic 45 ns read/write latency prevents scan cycle jitter. IC Role / Device Role / Timing Role: Primary volatile data scratchpad for cyclic process image storage, interfaced directly to ARM9-based controller bus. Use Value: 2 µA standby current extends backup supercapacitor hold-up time to >72 hours during AC loss; 512K × 16 configuration matches native bus width. | Use Scenario: Event-triggered crash log capture in automotive telematics control units, retaining last 10 seconds of CAN bus diagnostics before power interruption. IC Role / Device Role / Timing Role: High-reliability non-volatile shadow RAM holding critical fault codes and vehicle state snapshots prior to EEPROM commit. Use Value: 1.5 V data retention threshold ensures memory integrity during 12 V battery sag to 9 V; -40 °C to +85 °C rating covers under-hood thermal cycling. |
| Portable Medical Sensor Hub | Smart Energy Meter Firmware Cache |
Use Scenario: Aggregating multi-channel ECG/SpO₂ waveform samples in handheld diagnostic devices powered by CR2032 coin cells. IC Role / Device Role / Timing Role: Low-leakage buffer memory staging raw ADC data before Bluetooth LE transmission bursts. Use Value: 6 mA active current at 1 MHz enables 10 kSPS sampling with <1% duty-cycle active time-extending battery life to 18 months. | Use Scenario: Caching firmware update payloads and tariff tables in Class 0.5S electricity meters deployed in tropical climates with wide ambient swings. IC Role / Device Role / Timing Role: Secure, fast-access working memory for AES-128 decryption engine and real-time tariff calculation engine. Use Value: TSOP I package withstands 1000+ thermal cycles per JEDEC J-STD-020; 45 ns access meets 20 MHz MCU bus timing budgets. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed, low-power SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV51216BLL-10MLI | 10 ns faster access (35 ns), but higher standby current (15 µA typ) and narrower voltage range (2.7–3.6 V) | Preferred in high-throughput test equipment where speed dominates power budget | Select only if system requires sub-40 ns latency and can tolerate reduced battery life and no 2.2 V operation |
| CY62157DV30LL-45BVXI | Same pinout and timing, but lacks Automotive-E grade (-40 °C to +125 °C) qualification and has higher ISB2 (12 µA max) | Suitable for cost-sensitive consumer electronics where extended temperature is not required | Choose for legacy designs migrating from CY62157DV30; verify thermal margin in enclosed enclosures |
Compared with IS61WV51216BLL-10MLI and CY62157DV30LL-45BVXI, the CY62157EV30LL-45BVXA uniquely delivers 45 ns performance with 2.2 V minimum operation and 2 µA standby current-making it optimal for battery-constrained industrial edge nodes requiring wide voltage tolerance and long-term reliability.
Availability
CY62157EV30LL-45BVXA is available at Aetrix Electronics and suitable for industrial PLC data buffering, automotive telematics log storage, and portable medical sensor hubs requiring stable component supply across extended product lifecycles.
Supply support for CY62157EV30LL-45BVXA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensing, and connectivity solutions for industrial, automotive, and IoT markets.
This device belongs to the MoBL® (More Battery Life) SRAM product line, engineered specifically for ultra-low-power embedded systems where extended battery runtime and reliable operation across wide voltage and temperature ranges are critical design requirements.
FAQ
What is the function of the BYTE pin on CY62157EV30LL-45BVXA?
The BYTE pin is present only in the 48-pin TSOP I package and determines memory organization mode: tied HIGH configures the device as 512K × 16; tied LOW enables 1M × 8 mode, repurposing pin 45 as A19 and disabling BHE/BLE and I/O8–I/O14. In TSOP II and VFBGA packages, this pin is absent and the device operates exclusively in 512K × 16 mode.
Can CY62157EV30LL-45BVXA operate reliably at 2.2 V?
Yes-the device is fully specified from 2.2 V to 3.6 V, with all AC and DC parameters guaranteed across this range. At 2.2 V, tRC remains 45 ns (max), ISB2 stays ≤8 µA, and VIH/VIL thresholds scale proportionally. This enables direct integration with partially discharged Li-ion batteries (3.0 V nominal) without LDO regulation.
How does automatic power-down activate, and what is its recovery time?
Automatic power-down triggers when CE1 is HIGH or CE2 is LOW or both BHE and BLE are HIGH. Recovery to full operation requires tPU = 0 ns (no delay), and valid data appears after tAA = 45 ns from address assertion. The device exits retention mode immediately upon CE activation, with no software initialization needed.
Is CY62157EV30LL-45BVXA pin-compatible with CY62157DV30LL-45BVXI?
Yes-both share identical 48-pin TSOP I footprint, pin functions, and AC/DC specifications. Differences are limited to internal process enhancements: CY62157EV30 adds Automotive-E grade support and reduces ISB2 from 12 µA to 8 µA max, while maintaining full backward compatibility in industrial and automotive-A applications.
CY62157EV30LL-45BVXA Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- MOBL™
- Package/Case:
- 48-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 8Mbit
- Memory Organization:
- 512K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY62157EV30LL-45BVXA FAQ
1.How can I place an order for CY62157EV30LL-45BVXA through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62157EV30LL-45BVXA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62157EV30LL-45BVXA reliable?
The price and inventory of CY62157EV30LL-45BVXA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62157EV30LL-45BVXA is usually 5 days.
3.What payment methods are accepted for CY62157EV30LL-45BVXA?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62157EV30LL-45BVXA transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62157EV30LL-45BVXA?
CY62157EV30LL-45BVXA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62157EV30LL-45BVXA order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62157EV30LL-45BVXA?
For technical support, including CY62157EV30LL-45BVXA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62157EV30LL-45BVXA requirements.
6.How does Aetrix verify that CY62157EV30LL-45BVXA is sourced from the original manufacturer or authorized distributors?
All CY62157EV30LL-45BVXA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62157EV30LL-45BVXA meets industry standards.
7.What is the process for return or replacement of CY62157EV30LL-45BVXA?
All CY62157EV30LL-45BVXA units undergo pre-shipment inspection (PSI). If there is an issue with CY62157EV30LL-45BVXA, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62157EV30LL-45BVXA part is unused and in its original packaging.
Return procedure for CY62157EV30LL-45BVXA:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY62157EV30LL-45BVXA Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…
Machine vision system guide covering components, inspection workflow, camera and lens selection, FOV, pixel resolution, motion blur, strobe lighting, bandwidth, 2D/3D vision, integration, troubleshooti…

