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Cypress Semiconductor Corp CY62157H30-45BVXI
- Part No.:
- CY62157H30-45BVXI
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY62157H30-45BVXI.pdf
- Description:
- IC SRAM 8MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,204
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Product details
Overview
CY62157H30-45BVXI from Infineon Technologies (formerly Cypress) is an 8-Mbit MoBL® SRAM with embedded Error-Correcting Code (ECC), configured as 512K words × 16-bit, operating at 45 ns access time across 2.2–3.6 V supply, and featuring ultra-low standby current (max 16 µA). It serves as a high-reliability data buffer in industrial control modules requiring single-bit error correction and extended data retention at 1.0 V.
For engineers reviewing the CY62157H30-45BVXI datasheet, CY62157H30-45BVXI pinout, CY62157H30-45BVXI application, or CY62157H30-45BVXI equivalent, key selection criteria include dual chip enable logic (CE1/CE2), byte-level write control (BHE/BLE), ECC-enabled memory integrity, and Pb-free 48-ball VFBGA packaging for space-constrained embedded systems.
Technical Context
The CY62157H30-45BVXI implements a CMOS-based static RAM array with integrated ECC encoder/decoder that detects and corrects single-bit errors in real time during read operations. Its dual chip enable architecture requires CE1 = LOW and CE2 = HIGH for device activation, decoupling address decoding from chip selection.
It supports byte-selectable writes via independent BHE (I/O8–I/O15) and BLE (I/O0–I/O7) controls, and features "Byte Power Down": asserting neither BHE nor BLE forces automatic entry into standby mode regardless of CE state-enabling dynamic power gating at sub-word granularity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 8 Mbit (512K × 16-bit); provides 1 MB of word-accessible, non-refresh volatile storage |
| Access Time | 45 ns; guarantees deterministic read latency under worst-case industrial temperature (–40°C to +85°C) |
| Supply Voltage | 2.2 V to 3.6 V; compatible with 2.5 V and 3.3 V system rails without level-shifting |
| Standby Current | Max 16 µA at VCC = 3.6 V; enables multi-year battery-backed operation in low-power monitoring nodes |
| Data Retention | 1.0 V minimum VCC; maintains stored data during brown-out or backup-supply-only operation |
| ECC Function | Single-bit error correction per 16-bit word; eliminates soft-error-induced firmware crashes in EMI-prone environments |
| Input Compatibility | TTL-compatible I/Os; interfaces directly with legacy microcontrollers and FPGAs without bus buffers |
Pinout & Package
Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1 mm, Pb-free, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | 19-bit address bus supporting full 512K-word addressing; A18 is MSB |
| I/O0–I/O15 | Bidirectional Data Bus | 16-bit parallel interface; I/O0–I/O7 controlled by BLE, I/O8–I/O15 by BHE |
| CE1, CE2 | Dual Chip Enable | Active-Low CE1 and Active-High CE2 must both be asserted for access; enables hierarchical memory mapping |
| WE | Write Enable | LOW-active signal initiating write cycle; latches data on rising edge of WE when OE is HIGH |
| OE | Output Enable | LOW-active control for read data output; places I/Os in Hi-Z when deasserted |
| BHE, BLE | Byte High/Low Enable | Independent 8-bit write masking; simultaneous deassertion triggers automatic standby mode |
| VCC, VSS | Power Supply | Single 2.2–3.6 V supply; two VSS balls provide low-inductance ground return paths |
Key Features
| Feature | Design Value |
|---|---|
| Embedded ECC Logic | Hardware-accelerated single-bit error detection and correction per 16-bit word, eliminating need for external error-handling firmware overhead |
| Byte Power Down | Automatic transition to standby mode when both BHE and BLE are deasserted-reducing leakage without software intervention |
| Dual Chip Enable | Two independent enable signals (CE1/CE2) allow flexible memory banking and reduce address decoder complexity in multi-SRAM systems |
| 1.0 V Data Retention | Maintains valid memory contents down to 1.0 V supply, enabling seamless handover to backup battery or supercapacitor during main rail failure |
| Pb-Free VFBGA Packaging | 48-ball VFBGA (6 × 8 mm) supports high-density PCB layouts and automated reflow assembly with IPC Class 3 reliability |
Applications
| Industrial PLC Data Buffer | Medical Diagnostic Imaging Cache |
|---|---|
|
Use Scenario: Real-time buffering of sensor acquisition streams in programmable logic controllers with cyclic redundancy checks. IC Role / Device Role / Timing Role: Volatile high-speed scratchpad memory with ECC-protected word writes and deterministic 45 ns read latency. Use Value: Prevents corrupted control register updates due to cosmic-ray-induced bit flips in factory-floor EMI environments. |
Use Scenario: Temporary frame storage between FPGA-based image preprocessing and ARM-based DICOM encoding in portable ultrasound units. IC Role / Device Role / Timing Role: Low-voltage (2.5 V), low-standby-current SRAM interfacing directly with FPGA I/O banks. Use Value: Enables >10-year battery life in standby mode while retaining calibration tables during power cycling. |
| Railway Signaling Event Logger | Avionics Health Monitor Buffer |
|
Use Scenario: Logging critical train position and speed events with timestamp stamping in EN 5012x-certified signaling hardware. IC Role / Device Role / Timing Role: ECC-secured non-refresh memory holding last 10,000 event records with guaranteed 1.0 V data retention. Use Value: Ensures forensic traceability after brown-out or lightning-induced voltage sag without external backup circuitry. |
Use Scenario: Storing real-time engine parameter snapshots (RPM, temp, pressure) in DO-160G Zone 3 avionics modules. IC Role / Device Role / Timing Role: Radiation-tolerant SRAM with TTL-compatible I/Os interfacing to legacy ARINC 429 protocol engines. Use Value: Eliminates periodic memory scrubbing routines, reducing CPU load and certification test burden. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM with ECC applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS62WV51216BLL-45NLI | No embedded ECC; requires external error handling; 45 ns access, 2.5–3.6 V supply | Suitable only where system-level ECC is implemented in FPGA or MCU firmware | Select when cost sensitivity outweighs reliability requirements and SW/FPGA resources exist for ECC management |
| ON Semiconductor NVSRAM N25S80A16T150I | Non-volatile SRAM with auto-store to EEPROM; no ECC; 150 ns access; 3.0–3.6 V only | Used where power-loss data persistence is prioritized over speed or ECC | Choose when data must survive complete power removal-not just brown-out-and 45 ns timing is not required |
Compared with IS62WV51216BLL-45NLI and N25S80A16T150I, the CY62157H30-45BVXI uniquely delivers hardware ECC + 45 ns speed + 1.0 V retention in a single 48-ball VFBGA package-making it optimal for safety-critical, power-constrained, and EMI-hostile industrial deployments.
Availability
CY62157H30-45BVXI is available at Aetrix Electronics and suitable for industrial PLCs, medical imaging subsystems, railway event loggers, and avionics health monitors requiring stable component supply, long-term lifecycle support, and Pb-free compliance.
Supply support for CY62157H30-45BVXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and memory solutions with strong industrial and automotive focus.
The CY62157H series belongs to Infineon's MoBL® (Mobile Binary Logic) SRAM portfolio, designed specifically for low-power, high-reliability embedded systems where ECC protection, fast access, and extended data retention are mandatory.
FAQ
Does CY62157H30-45BVXI require external ECC circuitry?
No. The device integrates dedicated ECC encoder/decoder logic that automatically detects and corrects single-bit errors within each 16-bit word during read operations. No external logic, firmware, or memory controller support is needed-ECC functionality is fully self-contained and transparent to the host system.
What is the function of the BYTE pin in the TSOP I package, and does it apply to the VFBGA variant?
The BYTE pin exists only in the 48-pin TSOP I package and configures memory organization: tied to VCC for 512K × 16 mode or VSS for 1M × 8 mode. The 48-ball VFBGA (BVXI) variant has no BYTE pin-it operates exclusively in 512K × 16 configuration with fixed I/O0–I/O15 mapping and no address expansion capability.
Can CY62157H30-45BVXI operate reliably at 2.2 V across the full industrial temperature range?
Yes. The datasheet specifies guaranteed operation from –40°C to +85°C at VCC = 2.2 V to 3.6 V. At 2.2 V, access time remains ≤45 ns, standby current stays ≤16 µA, and all DC/AC parameters-including VIH/VIL thresholds and output drive strength-meet published limits across temperature.
How does the "Byte Power Down" feature interact with chip enable signals?
Byte Power Down is independent of CE1/CE2 states: when both BHE and BLE are deasserted, the device enters standby mode-even if CE1 is LOW and CE2 is HIGH. This allows fine-grained power control during idle bursts within an active memory window, reducing dynamic leakage without requiring chip deselection or address bus changes.
CY62157H30-45BVXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- MOBL™
- Package/Case:
- 48-VFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 8Mbit
- Memory Organization:
- 512K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY62157H30-45BVXI FAQ
1.How can I place an order for CY62157H30-45BVXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62157H30-45BVXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62157H30-45BVXI reliable?
The price and inventory of CY62157H30-45BVXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62157H30-45BVXI is usually 5 days.
3.What payment methods are accepted for CY62157H30-45BVXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62157H30-45BVXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62157H30-45BVXI?
CY62157H30-45BVXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62157H30-45BVXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62157H30-45BVXI?
For technical support, including CY62157H30-45BVXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62157H30-45BVXI requirements.
6.How does Aetrix verify that CY62157H30-45BVXI is sourced from the original manufacturer or authorized distributors?
All CY62157H30-45BVXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62157H30-45BVXI meets industry standards.
7.What is the process for return or replacement of CY62157H30-45BVXI?
All CY62157H30-45BVXI units undergo pre-shipment inspection (PSI). If there is an issue with CY62157H30-45BVXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62157H30-45BVXI part is unused and in its original packaging.
Return procedure for CY62157H30-45BVXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY62157H30-45BVXI Tags
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