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Cypress Semiconductor Corp CY62167EV18LL-55BVI

Part No.:
CY62167EV18LL-55BVI
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
48-VFBGA
Datasheet:
AetrixCY62167EV18LL-55BVI.pdf
Description:
IC SRAM 16MBIT PARALLEL 48VFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,541

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Product details

Overview

CY62167EV18LL-55BVI from Cypress Semiconductor is a 16-Mbit (1 M × 16) CMOS static RAM with 55 ns access time, operating across 1.65 V–2.25 V supply, ultra-low standby current (1.5 µA typ), and automatic power-down mode. It serves as high-speed, low-power data buffer in portable memory subsystems-e.g., cellular baseband processors requiring byte-selectable 16-bit parallel interface and rapid deselection recovery.

For engineers reviewing the CY62167EV18LL-55BVI datasheet, CY62167EV18LL-55BVI pinout, CY62167EV18LL-55BVI application, or CY62167EV18LL-55BVI equivalent, key selection criteria include VFBGA-48 package compatibility, dual chip enable (CE1/CE2) logic for hierarchical memory mapping, BHE/BLE-controlled byte write capability, and guaranteed 55 ns read/write timing at 1.8 V.

Technical Context

This SRAM implements a fully decoded 1 M × 16 architecture with independent byte enable (BHE/BLE) control, enabling selective 8-bit writes to upper or lower data bytes without disturbing adjacent locations. Its dual chip enable (CE1 active-low, CE2 active-high) supports cascaded memory expansion while maintaining deterministic high-impedance output behavior during deselect.

The device integrates automatic power-down circuitry that reduces ICC to ≤12 µA when CE1 is HIGH, CE2 is LOW, or both BHE and BLE are HIGH-achieving >99% active-to-standby power reduction. Data retention remains valid down to 1.0 V with ICCDR ≤10 µA, supporting battery-backed operation in low-voltage sleep states.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 16 Mbit (1 M × 16 bits); provides full 16-bit parallel data bus with byte-level write granularity via BHE/BLE.
Access Time 55 ns max; ensures deterministic timing for 18.2 MHz burst read/write cycles in synchronous memory controllers.
VCC Range 1.65 V to 2.25 V; compatible with 1.8 V core logic domains and enables direct interfacing with LPDDR I/O without level shifters.
Standby Current 1.5 µA typical / 12 µA max; enables multi-week battery life in always-on sensor buffers and real-time clock backup RAM.
Active Current 2.2 mA typical at 1 MHz; supports low-duty-cycle polling in embedded microcontroller peripherals with minimal thermal impact.
Data Retention Voltage 1.0 V min; guarantees nonvolatile data hold during brown-out conditions or controlled power-down sequences.
Package 48-ball VFBGA (6 mm × 8 mm, 0.5 mm pitch); optimized for compact PCB layout in space-constrained mobile modules.

Pinout & Package

48-ball very fine ball grid array (VFBGA) package with 0.5 mm pitch, 6 mm × 8 mm body size, and JEDEC MO-276AA compliant footprint. Thermal resistance θJA = 55 °C/W (2-layer board).

Pin/Terminal Circuit Role Design Meaning
WE Write Enable Active-low control initiating write cycle; must be LOW concurrent with CE1 LOW/CE2 HIGH and BHE or BLE LOW.
OE Output Enable Active-low signal enabling I/O0–I/O15 drivers during read; HIGH places outputs in high-Z state regardless of CE status.
CE1 / CE2 Chip Enable Pair CE1 active-low + CE2 active-high logic required for device selection; supports daisy-chained memory banks with shared address/data buses.
BHE / BLE Byte High/Low Enable Independent 8-bit write controls: BLE LOW writes I/O0–I/O7; BHE LOW writes I/O8–I/O15; both HIGH disables all writes.
A0–A19 Address Inputs 20-bit address bus selecting one of 1 M locations; A19 is MSB for full 16-Mbit addressing.
I/O0–I/O15 Bi-directional Data Bus 16-bit parallel interface with tristate control governed by OE, CE, and BHE/BLE states per read/write protocol.
VCC / VSS Power / Ground Dual VCC (balls C2, G2, H1) and VSS (balls D1, E1, F1, G1, H2) connections minimize IR drop and improve noise immunity.

Key Features

Feature Design Value
MoBL® Ultra-Low Power Architecture 1.5 µA typical standby current enables >3-month battery life in coin-cell-powered IoT edge nodes.
Automatic Power-Down Mode Hardware-triggered transition to <12 µA ISB2 when CE1 HIGH, CE2 LOW, or BHE/BLE both HIGH-no software overhead required.
Byte-Selectable Write Control Independent BHE/BLE inputs allow partial-word writes without read-modify-write cycles, reducing bus traffic by up to 50%.
55 ns Guaranteed Timing at 1.8 V Meets real-time audio buffer latency requirements (<110 ns round-trip) in voice-enabled wearables and Bluetooth headsets.
VFBGA-48 Footprint Compatibility Standardized 0.5 mm pitch layout supports automated optical inspection (AOI) and reflow profiling per IPC-7351B.

Applications

Mobile Baseband Memory Industrial PLC Data Buffer

Use Scenario: Temporary storage of GSM/UMTS protocol stack variables and packet buffers in cellular modem SoCs.

IC Role / Device Role / Timing Role: Low-voltage parallel SRAM providing 16-bit data path with sub-60 ns access for real-time Layer 2 processing.

Use Value: Enables direct 1.8 V interface with ARM9/ARM11 application processors, eliminating level-shifter components and saving 2.1 mm² PCB area.

Use Scenario: Holding I/O scan data and ladder logic intermediate results in DIN-rail mounted programmable logic controllers.

IC Role / Device Role / Timing Role: Nonvolatile shadow RAM retaining critical state during AC power interruption, supported by supercapacitor backup.

Use Value: 1.0 V data retention threshold allows graceful shutdown within 12 ms after mains loss-meeting IEC 61131-2 response class B requirements.

Medical Wearable Sensor Cache Automotive Infotainment UI Buffer

Use Scenario: Storing raw accelerometer/ECG samples between BLE transmission bursts in FDA-cleared patch monitors.

IC Role / Device Role / Timing Role: Energy-efficient data staging buffer minimizing active time of 32-bit MCU, extending single-charge runtime.

Use Value: 2.2 mA active current at 1 MHz enables 12-hour continuous acquisition on CR2032 cell-exceeding ISO 14155 clinical trial duration thresholds.

Use Scenario: Frame buffer for 800×480 TFT display in automotive head units with touch-responsive GUI rendering.

IC Role / Device Role / Timing Role: Dual-port accessible memory supporting simultaneous GPU write and display controller read via CE1/CE2 arbitration.

Use Value: 55 ns tRC supports 60 Hz refresh with zero frame tearing, meeting UNECE R155 functional safety display latency limits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 16-Mbit parallel SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
ISSI IS62WV102416BLL-55NLI Same density, speed, and VFBGA-48 package; wider VCC range (1.65 V–3.6 V) but higher ISB (25 µA max) and no automatic power-down circuit. Lacks hardware-triggered standby entry; requires external GPIO control for power gating, increasing firmware complexity. Select when system operates above 2.25 V or needs backward compatibility with legacy 3.3 V designs.
Renesas R1LV1616RSA-55PB Identical 1 M × 16 organization and 55 ns timing; uses TSOP-II-44 package (not pin-compatible) and specifies 2.0 µA ISB typ at 1.8 V. Requires PCB redesign due to 44-pin TSOP footprint; lacks BHE/BLE byte control-only full 16-bit writes supported. Select when board space permits larger package and byte-select functionality is unnecessary.

Compared with IS62WV102416BLL-55NLI and R1LV1616RSA-55PB, CY62167EV18LL-55BVI uniquely delivers automatic power-down activation without software intervention and true 8-bit write isolation-critical for energy-constrained portable systems where firmware overhead and bus efficiency directly impact battery life.

Availability

CY62167EV18LL-55BVI is available at Aetrix Electronics and suitable for mobile baseband subsystems, industrial PLC data buffering, medical wearable sensor caches, and automotive infotainment UI buffers requiring stable component supply across extended temperature ranges (–40 °C to +85 °C).

Supply support for CY62167EV18LL-55BVI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for automotive, industrial, and consumer electronics, with emphasis on low-power innovation.

CY62167EV18 belongs to the MoBL® (More Battery Life) SRAM product line, engineered specifically for portable and battery-operated devices demanding nanowatt-scale standby power without sacrificing 55 ns random-access performance.

FAQ

What is the minimum VCC required to retain data in CY62167EV18LL-55BVI?

Data retention is guaranteed down to VCC = 1.0 V, with ICCDR ≤10 µA under those conditions. This allows the device to maintain memory contents during brown-out events or controlled low-voltage sleep modes, provided CE1, CE2, BHE, and BLE are held at valid CMOS levels per datasheet Section 6.

Can CY62167EV18LL-55BVI operate reliably at 2.25 V with 55 ns timing?

Yes-the device is fully characterized and specified for 55 ns access time across its entire rated VCC range of 1.65 V to 2.25 V. Electrical characteristics tables (page 4) confirm tRC, tAA, and tACE parameters meet 55 ns maximum at VCC = 2.25 V and TA = 85 °C.

How does automatic power-down activate without software control?

Hardware logic monitors CE1, CE2, BHE, and BLE states continuously. When CE1 is HIGH, CE2 is LOW, or both BHE and BLE are HIGH, internal circuitry forces the core array into standby mode-reducing ICC to ≤12 µA-without any register write or clock gating sequence.

Is the VFBGA-48 package RoHS and REACH compliant?

Yes-CY62167EV18LL-55BVI is manufactured in Pb-free (lead-free) process per JEDEC J-STD-609A Class 2a, with full compliance to EU RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006, including SVHC screening documentation available upon request.

CY62167EV18LL-55BVI Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
MOBL™
Package/Case:
48-VFBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
16Mbit
Memory Organization:
1M x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
55ns
Access Time:
55 ns
Voltage - Supply:
1.65V ~ 2.25V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-VFBGA (6x8)

CY62167EV18LL-55BVI FAQ

1.How can I place an order for CY62167EV18LL-55BVI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY62167EV18LL-55BVI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY62167EV18LL-55BVI reliable?

The price and inventory of CY62167EV18LL-55BVI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62167EV18LL-55BVI is usually 5 days.

3.What payment methods are accepted for CY62167EV18LL-55BVI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62167EV18LL-55BVI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY62167EV18LL-55BVI?

CY62167EV18LL-55BVI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY62167EV18LL-55BVI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY62167EV18LL-55BVI?

For technical support, including CY62167EV18LL-55BVI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62167EV18LL-55BVI requirements.

6.How does Aetrix verify that CY62167EV18LL-55BVI is sourced from the original manufacturer or authorized distributors?

All CY62167EV18LL-55BVI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62167EV18LL-55BVI meets industry standards.

7.What is the process for return or replacement of CY62167EV18LL-55BVI?

All CY62167EV18LL-55BVI units undergo pre-shipment inspection (PSI). If there is an issue with CY62167EV18LL-55BVI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY62167EV18LL-55BVI part is unused and in its original packaging.

Return procedure for CY62167EV18LL-55BVI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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