Cypress Semiconductor Corp CY62167G-45BVXI

Overview

CY62167G-45BVXI from Infineon Technologies (formerly Cypress) is a 16-Mbit MoBL® low-power SRAM with embedded single-bit error-correcting code (ECC), configurable as 1M × 16 or 2M × 8, operating at 45 ns access time across 4.5–5.5 V supply, and featuring TTL-compatible I/Os, ERR pin for error indication, and Byte Power-down mode for ultra-low standby current (max 16 µA). It serves in industrial control systems requiring data integrity and power-constrained operation.

For engineers reviewing the CY62167G-45BVXI datasheet, CY62167G-45BVXI pinout, CY62167G-45BVXI application, or CY62167G-45BVXI equivalent, key selection considerations include ECC-enabled reliability, dual-voltage support (1.65–2.2 V / 4.5–5.5 V), 48-pin TSOP I package compatibility, byte-select write capability via BHE/ BLE, and ERR signal assertion on single-bit correction events.

Technical Context

This SRAM integrates dedicated ECC encode/decode logic within the memory array to detect and correct single-bit errors during read cycles without external circuitry. Its Byte Power-down feature activates automatically when both BHE and BLE are deasserted, forcing standby mode independent of CE state-enabling dynamic power gating per memory access granularity.

The device supports two chip-enable configurations: single CE (CY62167GE variant includes ERR output) or dual CE1/CE2 (CY62167G), with address mapping extending to A20 in 2M × 8 mode (pin 45 repurposed as A20 in TSOP I). All I/Os enter high-impedance state upon deselection or OE/BHE/ BLE deassertion, ensuring clean bus isolation.

Key Specifications

Pinout & Package

Package: 48-pin TSOP I (Type I, 12 mm × 20 mm, 0.5 mm pitch), RoHS-compliant, Pb-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Compared with IS61WV102416BLL-10MLI and R1EX24128ASAS0I, CY62167G-45BVXI uniquely delivers hardware ECC, 16-Mbit density, and 45 ns random access in a parallel interface - making it optimal for real-time, integrity-sensitive buffering where speed, size, and autonomous error correction are jointly required.

Availability

CY62167G-45BVXI is available at Aetrix Electronics and suitable for industrial PLC memory buffers, medical diagnostic data caches, avionics flight data recorder buffers, and automotive ADAS sensor fusion memory requiring stable component supply and long-term lifecycle support.

Supply support for CY62167G-45BVXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensing, connectivity, and memory solutions for industrial, automotive, and IoT applications.

CY62167G-45BVXI belongs to Infineon's MoBL® (Mobile Binary Logic) SRAM product line, engineered for ultra-low-power, high-reliability volatile memory in space-constrained and energy-sensitive embedded systems.

FAQ

What is the function of the ERR pin on CY62167G-45BVXI?

The ERR pin is an open-drain output that asserts HIGH during a read cycle when a single-bit error is detected and corrected by the internal ECC logic. It remains LOW otherwise. This signal allows system firmware to log correction events or trigger diagnostics without interrupting normal memory access. The pin is not present on CY62167G variants and only available on CY62167GE devices like this part number.

Can CY62167G-45BVXI operate in both 1M × 16 and 2M × 8 configurations on the same PCB?

Yes - configuration is determined by the BYTE pin voltage: tie BYTE to VCC for 1M × 16 mode (standard address range A0–A19); tie BYTE to VSS for 2M × 8 mode, which repurposes pin 45 as A20 and disables BHE, BLE, and I/O8–I/O14. No hardware changes beyond the BYTE bias are required, enabling flexible design reuse across memory-width variants.

Does CY62167G-45BVXI support automatic error correction write-back?

No - the device performs single-bit error correction during read operations only, and corrected data is presented on the I/O bus but not written back to the memory array. The datasheet explicitly states "This device does not support automatic write-back on error detection." System-level software must handle persistent correction if required.

What is the maximum junction temperature and thermal resistance for CY62167G-45BVXI in TSOP I package?

The absolute maximum junction temperature is +125 °C. For the 48-pin TSOP I package, the typical junction-to-ambient thermal resistance (θ_JA) is 50 °C/W under standard JEDEC 2-layer board conditions. Derating curves in the datasheet specify that continuous operation above 85 °C ambient requires reduced power dissipation to maintain T_J ≤ 125 °C.