Cypress Semiconductor Corp CY62167GE18-55BVXI

Overview

CY62167GE18-55BVXI from Infineon Technologies (formerly Cypress) is a 16-Mbit MoBL® SRAM with embedded single-bit error-correcting code (ECC), configurable as 1M × 16 or 2M × 8, operating at 55 ns access time, 1.65–2.2 V or 4.5–5.5 V supply, and featuring an ERR output pin for real-time ECC event indication - deployed in industrial control memory buffers requiring data integrity under voltage fluctuation or radiation-prone environments.

For engineers reviewing the CY62167GE18-55BVXI datasheet, CY62167GE18-55BVXI pinout, CY62167GE18-55BVXI application, or CY62167GE18-55BVXI equivalent, key selection criteria include dual-voltage support, byte-selectable power-down, TTL-compatible I/Os, ECC status signaling via dedicated ERR pin, and 48-pin TSOP I package compatibility with legacy board layouts.

Technical Context

This SRAM integrates on-die ECC encoding/decoding logic that detects and corrects single-bit errors during read cycles without external circuitry. The ERR pin asserts high only when a correctable error is found and corrected in the accessed word - no automatic write-back occurs, preserving deterministic timing.

It supports two chip-enable configurations (single CE or dual CE1/CE2), byte-level write control via BHE/ BLE, and a unique Byte Power-down mode: asserting both BHE and BLE low forces immediate standby regardless of CE state, reducing ISB2 to ≤16 µA at 2.2 V or ≤5.5 µA at 5 V.

Key Specifications

Pinout & Package

The CY62167GE18-55BVXI is supplied in a 48-pin Thin Small Outline Package (TSOP I), RoHS-compliant, with 0.5 mm pitch and standard JEDEC MO-143AC footprint. Pin 45 serves as A20 in 2M × 8 mode; BYTE pin selects configuration (VCC = 1M × 16, VSS = 2M × 8).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Compared with IS61WV102416BLL-10MLI and R1EX24128ASAS0I#U0, CY62167GE18-55BVXI uniquely delivers parallel-interface speed, on-die ECC, and dual-voltage operation in one package - essential for deterministic, low-latency, radiation-aware memory subsystems.

Availability

CY62167GE18-55BVXI is available at Aetrix Electronics and suitable for industrial PLCs, medical imaging subsystems, avionics sensor interfaces, and smart grid RTUs requiring stable component supply across extended temperature and voltage ranges.

Supply support for CY62167GE18-55BVXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains its high-reliability memory portfolio, emphasizing automotive-grade robustness, industrial longevity, and functional safety readiness.

CY62167GE belongs to the MoBL® (Mobile Bit-Low-power) SRAM product line, engineered for battery-sensitive and mission-critical embedded systems needing ECC assurance without performance penalty.

FAQ

Does CY62167GE18-55BVXI support automatic error correction write-back?

No. The device performs single-bit error correction on read cycles only and does not automatically rewrite corrected data to memory. The ERR pin signals correction occurrence, but the corrected value remains latched on the I/O bus for the host to optionally capture or ignore. Write-back must be implemented externally if persistent correction is required.

Can CY62167GE18-55BVXI operate in 2M × 8 mode using the 48-pin TSOP I package?

Yes. Tie the BYTE pin to VSS to configure the device as 2M × 8. In this mode, pin 45 becomes address line A20, while BHE, BLE, and I/O8–I/O14 are unused and may be left floating. All other control and data pins retain defined functionality per the 2M × 8 timing and addressing map.

What is the role of the ERR pin during normal operation without errors?

The ERR pin remains in high-impedance (open-drain) state when no correctable error is detected. It requires an external pull-up resistor to VCC. Only during a read cycle where a single-bit error is both detected and corrected does ERR assert high for the duration of that read access - it does not latch or remain asserted after the cycle completes.

Is CY62167GE18-55BVXI compatible with 5 V TTL logic without level shifters?

Yes. When operated at 4.5–5.5 V VCC, its inputs meet TTL voltage thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V), and outputs drive VOH ≥ 2.4 V (at –1 mA) and VOL ≤ 0.4 V (at 2.1 mA), satisfying standard TTL fan-out and noise margin requirements without translation circuitry.