Cypress Semiconductor Corp CY62167GE30-45BV1XI

Overview

CY62167GE30-45BV1XI from Infineon Technologies (formerly Cypress) is a 16-Mbit MoBL® SRAM with embedded single-bit error-correcting code (ECC), configurable as 1M × 16 or 2M × 8, operating at 45 ns access time over 4.5–5.5 V supply, and featuring an ERR output pin for real-time ECC event indication. It targets mission-critical embedded memory applications requiring data integrity in industrial control and instrumentation systems.

For engineers reviewing the CY62167GE30-45BV1XI datasheet, CY62167GE30-45BV1XI pinout, CY62167GE30-45BV1XI application, or CY62167GE30-45BV1XI equivalent, key selection factors include its dual-voltage support (1.65–2.2 V / 4.5–5.5 V), ultra-low 16 µA max standby current, Byte Power-down capability, TTL-compatible I/Os, and explicit ERR signal for fault-aware system design.

Technical Context

This SRAM integrates dedicated ECC encode/decode logic within the memory array, enabling automatic detection and correction of single-bit errors during read cycles without external logic. The ERR pin asserts high only when a correctable error is found and corrected - no write-back or interrupt generation occurs.

It supports both single and dual chip enable configurations, with byte-level write control via BHE/ BLE pins and flexible package-based address mapping (e.g., A20 exposed on pin 45 in 2M×8 TSOP mode). The 48-ball VFBGA (B-type) package enables compact PCB layout while maintaining full functional compatibility with the 48-pin TSOP I variant.

Key Specifications

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), ball pitch 0.5 mm, body size 6.0 mm × 8.0 mm × 1.0 mm (JEDEC MO-276AA). Pinout validated per Figure 3 (Single CE + ERR) and Figure 4 (Dual CE + ERR) in datasheet 001-81537 Rev. *R.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Compared with IS61WV102416BLL-10MLI and AS6C1008-55PCN, CY62167GE30-45BV1XI uniquely delivers hardware ECC with real-time ERR signaling, ultra-low 16 µA standby, and dual-voltage support - making it the sole choice for new designs requiring certified data integrity at industrial temperature range without external complexity.

Availability

CY62167GE30-45BV1XI is available at Aetrix Electronics and suitable for industrial PLC memory buffers, medical imaging cache subsystems, and avionics data loggers requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.

Supply support for CY62167GE30-45BV1XI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains the MoBL® SRAM portfolio with full technical and supply chain continuity.

CY62167GE belongs to the MoBL® (Mobile Bit-Low-power) SRAM family, engineered for high-reliability embedded systems demanding low static power, fast access, and built-in data integrity - especially where radiation-induced or voltage-margin soft errors pose risk.

FAQ

Does CY62167GE30-45BV1XI support automatic error correction without host intervention?

Yes - the device performs single-bit error detection and correction transparently during every read cycle using on-die ECC logic. No host processor action is required; corrected data appears on I/O lines, and the ERR pin signals occurrence. However, it does not perform automatic write-back of corrected data to memory cells.

Can the CY62167GE30-45BV1XI operate in 2M × 8 mode using the 48-ball VFBGA package?

No - the 2M × 8 configuration requires A20 address line access, which is only routed to pin 45 in the 48-pin TSOP I package. The 48-ball VFBGA (B-type) package used in CY62167GE30-45BV1XI supports only the 1M × 16 configuration with A0–A19 addressing.

What is the function of the BYTE pin, and is it present on this VFBGA variant?

The BYTE pin configures memory organization in TSOP packages (tie to VCC for 1M×16, VSS for 2M×8), but it is not bonded out in the 48-ball VFBGA package. This variant is fixed to 1M × 16 operation; no external BYTE control is available or required.

How does the Byte Power-down feature interact with chip enable signals?

Byte Power-down activates automatically when both BHE and BLE are deasserted (high), forcing the device into standby regardless of CE/CE1/CE2 state. This enables power gating at the byte-control layer - useful in partial-data-access scenarios where full chip disable would disrupt timing-critical control logic.