Cypress Semiconductor Corp CY62177ESL-55ZXI

Overview

CY62177ESL-55ZXI from Infineon Technologies (formerly Cypress) is a 32-Mbit MoBL® CMOS static RAM organized as 2M × 16 or 4M × 8, operating at 55 ns access time with dual voltage support (2.2–3.6 V and 4.5–5.5 V), ultra-low standby current (3 µA typical), and automatic power-down mode. It serves as main memory or buffer in battery-powered portable electronics requiring fast, low-power volatile storage.

For engineers reviewing the CY62177ESL-55ZXI datasheet, CY62177ESL-55ZXI pinout, CY62177ESL-55ZXI application, or CY62177ESL-55ZXI equivalent, key selection criteria include configurable word width, industrial temperature range (–40 °C to +85 °C), TSOP I package compatibility, and byte-enable-controlled partial-word writes for embedded system memory mapping.

Technical Context

The CY62177ESL-55ZXI implements a dual-bank SRAM architecture with independent byte enable (BHE/ BLE) control, enabling selective 8-bit or 16-bit access without external logic. Its automatic power-down circuit reduces current by 99% when address lines are static and chip/byte enables are inactive.

It supports two distinct memory configurations via the BYTE pin: tied to VCC for 2M × 16 operation (A0–A20, I/O0–I/O15), or tied to VSS for 4M × 8 operation (A0–A21, I/O0–I/O7), with A21 appearing on pin 45 only in the latter mode. All control inputs (CE1, CE2, OE, WE, BHE, BLE) are CMOS-compatible with defined VIH/VIL thresholds across both voltage ranges.

Key Specifications

Pinout & Package

Package: 48-pin Thin Small Outline Package I (TSOP I), Pb-free, surface-mount, 12 mm × 20 mm footprint, 0.5 mm pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-density, low-power SRAM applications.

Compared with IS62WV25616BLL-55NLI and R1LV25616AS-5SI#U0, the CY62177ESL-55ZXI uniquely delivers 32 Mbit density, dual-voltage operation, and hardware-configurable word width - making it the only option among the three capable of replacing two discrete SRAMs in 5 V/3.3 V hybrid systems with dynamic bus-width requirements.

Availability

CY62177ESL-55ZXI is available at Aetrix Electronics and suitable for portable cellular handsets, industrial data loggers, and medical patient monitors requiring stable component supply across long product lifecycles and varying voltage architectures.

Supply support for CY62177ESL-55ZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensing, connectivity, and memory solutions for industrial, automotive, and IoT applications.

The CY62177ESL belongs to Infineon's MoBL® (More Battery Life) SRAM product line, engineered specifically for ultra-low-power, high-reliability volatile memory in portable and energy-constrained embedded systems.

FAQ

What voltage ranges does the CY62177ESL-55ZXI support, and are both fully specified?

The CY62177ESL-55ZXI is fully specified for operation at 2.2 V to 3.6 V and separately at 4.5 V to 5.5 V. Datasheet electrical characteristics-including access time, ICC, and ISB2-are guaranteed across both ranges. Operation between 3.6 V and 4.5 V is not characterized or guaranteed, and design must avoid this gap.

How does the BYTE pin determine memory configuration, and what happens to unused pins in each mode?

When BYTE is tied to VCC, the device operates as 2M × 16: A0–A20 are active, I/O0–I/O15 are functional, and pin 45 is NC. When BYTE is tied to VSS, it operates as 4M × 8: A21 appears on pin 45, and BHE, BLE, I/O8–I/O14 become no-connect - these pins must be left floating or tied to safe voltage levels per datasheet guidance.

What triggers automatic power-down, and how quickly does it engage?

Automatic power-down activates when all of the following occur: CE1 ≥ VCC – 0.2 V OR CE2 ≤ 0.2 V OR both BHE and BLE ≥ VCC – 0.2 V, with no address toggling. The transition occurs within 55 ns (tPD), reducing ICC to ≤25 µA without software or external control.

Can the CY62177ESL-55ZXI be used in a 4M × 8 configuration while retaining full 55 ns speed?

Yes. In 4M × 8 mode (BYTE = VSS), the device maintains its full 55 ns access time specification. Address range expands to A0–A21, and only I/O0–I/O7 are active; all timing parameters-including tRC, tAA, and tDOE-remain identical to 2M × 16 mode per the datasheet's "Product Portfolio" table on page 3.