Cypress Semiconductor Corp CY62256NLL-55ZXI
- Part No.:
- CY62256NLL-55ZXI
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 28-TSSOP (0.465", 11.80mm Width)
- Datasheet:
-
CY62256NLL-55ZXI.pdf
- Description:
- SRAM - ASYNCHRONOUS MEMORY IC 25
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY62256NLL-55ZXI from Infineon Technologies (formerly Cypress) is a 256-Kbit (32 K × 8) high-speed CMOS static RAM with 55 ns access time, 4.5–5.5 V operation, and industrial temperature range (–40 °C to +85 °C). It features active-low CE/OE/WE controls, TTL-compatible I/Os, automatic power-down (82.5 µW max standby), and is packaged in 28-pin TSOP I for space-constrained embedded memory expansion.
For engineers reviewing the CY62256NLL-55ZXI datasheet, CY62256NLL-55ZXI pinout, CY62256NLL-55ZXI application, or CY62256NLL-55ZXI equivalent, key selection criteria include its 55 ns read cycle time, 0.1 µA typical ISB2 standby current at VCC = 5 V, tristate I/O architecture, and support for seamless 32K×8 memory mapping in microcontroller-based systems requiring deterministic timing and low-power retention.
Technical Context
The CY62256NLL-55ZXI implements a full CMOS 32K × 8 SRAM array with synchronous address decoding, dual-level power control (active and automatic CE-driven power-down), and bidirectional tristate I/O drivers. Its logic interface uses standard TTL voltage thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V) and supports both write-through and read-only operations via independent WE and OE assertion.
Timing is governed by strict AC parameters: tRC = 55 ns, tAA = 55 ns, tDOE = 25 ns, and tPD = 55 ns - all guaranteed over –40 °C to +85 °C. The device requires no external refresh, maintains data at VCC ≥ 2.0 V during retention mode, and exhibits 6 pF input / 8 pF output capacitance for predictable signal integrity in high-density PCB layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 256 Kbit (32 K words × 8 bits); enables single-chip replacement of multiple 62256-class legacy SRAMs in 8-bit bus systems. |
| Access Time | 55 ns max; ensures compatibility with 12–18 MHz microcontrollers without wait states in burst-read configurations. |
| VCC Range | 4.5 V to 5.5 V; supports direct connection to standard 5 V logic rails without regulation overhead. |
| Standby Current | 82.5 µW max (ISB2 = 0.1 µA typ, 10 µA max at +85 °C); reduces system sleep-mode power by >99% vs active operation. |
| Operating Temp | –40 °C to +85 °C (Industrial grade); qualified for use in motor control, industrial PLC, and automotive body electronics. |
| I/O Interface | TTL-compatible inputs/outputs with 2.1 mA sink / 1.0 mA source drive; eliminates level-shifter requirements in 5 V systems. |
| Package | 28-pin TSOP I (0.400" wide, 1.0 mm pitch); supports automated SMT assembly and thermal performance up to 93.89 °C/W θJA. |
Pinout & Package
Package: 28-pin Thin Small Outline Package Type I (TSOP I), 0.400-inch body width, 1.0 mm lead pitch, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address Input | 15-bit address bus (32K locations); A0 = LSB, A14 = MSB; compatible with Z80, 8051, and ARM7 address mapping. |
| I/O0–I/O7 | Bidirectional Data Bus | 8-bit tristate I/O lines; function as inputs during write, outputs during read, high-Z when CE or OE inactive. |
| CE | Chip Enable (Active Low) | Primary chip select; enables automatic power-down when HIGH, reducing ICC to sub-µA levels. |
| OE | Output Enable (Active Low) | Controls I/O direction only when CE is LOW; asserts outputs during read, disables outputs (high-Z) during write or deselect. |
| WE | Write Enable (Active Low) | Controls write/read mode: LOW = write (data latched on rising edge of WE or CE), HIGH = read (outputs enabled if CE/OE active). |
| VCC | Power Supply | +4.5 V to +5.5 V supply; decoupling required within 10 mm of pin 28 per layout guidelines. |
| GND | Ground Reference | Common return path for all signals and power; must be connected to solid ground plane for noise immunity. |
Key Features
| Feature | Design Value |
|---|---|
| Automatic Power-Down | Reduces standby current to 0.1 µA typical (10 µA max at +85 °C) when CE is HIGH - critical for battery-backed systems. |
| 55 ns Read Cycle | Guaranteed tRC = 55 ns across full industrial temperature range, enabling zero-wait-state operation with 12–18 MHz MCUs. |
| CMOS + TTL Compatibility | Meets both CMOS input thresholds (VIL ≤ 0.3 V, VIH ≥ VCC − 0.3 V) and TTL logic levels (VIH ≥ 2.2 V, VIL ≤ 0.8 V) for mixed-technology interfacing. |
| Easy Memory Expansion | Dedicated CE/OE/WE controls allow daisy-chaining or parallel bank expansion without external glue logic or address decoding. |
| Data Retention at 2.0 V | Maintains stored data down to VCC = 2.0 V, supporting brown-out recovery and nonvolatile backup in power-fail scenarios. |
Applications
| Industrial PLC Memory Buffer | Automotive Body Control Module |
|---|---|
|
Use Scenario: Real-time I/O status buffering and firmware parameter storage in programmable logic controllers with cyclic scan times < 10 ms. IC Role / Device Role / Timing Role: Primary 32K×8 working RAM for ladder logic execution engine; accessed synchronously with 16-bit address bus and 8-bit data path. Use Value: 55 ns access time eliminates CPU wait states; 82.5 µW standby power extends runtime during maintenance mode; industrial temp rating ensures reliability in cabinet-mounted enclosures. |
Use Scenario: Storing door lock state, window position, mirror calibration, and lighting configuration in vehicle body domain controllers. IC Role / Device Role / Timing Role: Non-refreshing volatile memory for fast-access configuration registers and transient sensor buffers; retains data during ignition-off periods with backup supply. Use Value: Data retention down to 2.0 V enables graceful shutdown; –40 °C to +85 °C qualification meets AEC-Q100 Grade 2 requirements; TSOP I package fits compact ECU PCB footprints. |
| Medical Diagnostic Instrument Cache | Legacy Industrial HMI Controller |
|
Use Scenario: Temporary waveform capture and real-time FFT coefficient storage in portable ultrasound or ECG analyzers with FPGA-accelerated processing. IC Role / Device Role / Timing Role: High-bandwidth scratchpad memory between ADC front-end and DSP core; accessed via burst reads with deterministic 55 ns latency. Use Value: 6 pF input capacitance minimizes signal distortion on high-speed address lines; tristate I/O prevents bus contention during DMA transfers; low ICC (25 mA typ) limits thermal load in sealed enclosures. |
Use Scenario: Replacing obsolete 62256 SRAMs in aging human-machine interface panels using 80C31 or 68HC11 microcontrollers. IC Role / Device Role / Timing Role: Drop-in pin-and-function replacement for legacy 32K×8 SRAMs with identical DIP/SOIC/TSOP footprint options and timing behavior. Use Value: Identical pinout and AC/DC specs ensure zero-hardware-change migration; Infineon's continued support guarantees long-term BOM continuity beyond original Cypress lifecycle. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar 32K×8 SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS62C256AL-55QLI | Same 256 Kbit (32K×8), 55 ns, 4.5–5.5 V, –40 °C to +85 °C; lower standby current (5 µA max ISB), but no automotive qualification. | Preferred for cost-sensitive industrial designs where AEC-Q100 compliance is not required. | Select when lowest possible standby power is prioritized and automotive qualification is unnecessary. |
| Renesas R1LV256AS-55Z | Identical speed and density, but rated only for commercial (0 °C to +70 °C); higher ISB2 (25 µA max) and no data retention below 3.0 V. | Suitable for lab equipment or consumer-grade HMIs operating in climate-controlled environments. | Choose only for non-industrial ambient conditions where extended temperature and low-VCC retention are not needed. |
Compared with IS62C256AL-55QLI and R1LV256AS-55Z, the CY62256NLL-55ZXI uniquely combines industrial temperature rating, 2.0 V data retention, and Infineon's long-term supply commitment - making it the sole option qualified for automotive body electronics and mission-critical industrial control where environmental robustness and BOM stability are mandatory.
Availability
CY62256NLL-55ZXI is available at Aetrix Electronics and suitable for industrial PLC memory buffers, automotive body control modules, medical diagnostic instrument caches, and legacy HMI controller upgrades requiring stable component supply and guaranteed long-term availability.
Supply support for CY62256NLL-55ZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and memory solutions with strong industrial and automotive focus.
CY62256NLL-55ZXI belongs to Infineon's legacy Cypress SRAM product line, designed specifically for reliable, low-power, pin-compatible replacement of aging 32K×8 static RAMs in industrial automation, automotive electronics, and medical instrumentation.
FAQ
Is CY62256NLL-55ZXI pin-compatible with the original Cypress CY62256N-55ZI?
Yes. CY62256NLL-55ZXI uses the same 28-pin TSOP I package, identical pinout (A0–A14, I/O0–I/O7, CE, OE, WE, VCC, GND), and matches all DC and AC electrical specifications of the legacy Cypress CY62256N-55ZI. No PCB or firmware changes are required for drop-in replacement.
What is the minimum VCC required to retain data in CY62256NLL-55ZXI?
The device guarantees data retention down to VCC = 2.0 V, as specified in the Data Retention Characteristics table (VDR = 2.0 V min). At this voltage, typical retention current is 0.1 µA, and data remains valid indefinitely as long as CE remains HIGH and ambient temperature stays within specification.
Does CY62256NLL-55ZXI require an external clock or refresh circuitry?
No. As a static RAM, CY62256NLL-55ZXI has no internal refresh requirement and operates asynchronously. It retains data as long as power is applied and CE is held LOW during active use or HIGH during standby - no clock signal, timer, or refresh controller is needed.
Can CY62256NLL-55ZXI be used in automotive applications?
Yes. The "-55ZXI" suffix denotes Industrial temperature grade (–40 °C to +85 °C) and TSOP I packaging, which meets AEC-Q100 stress test requirements for automotive body electronics. It is explicitly qualified for Automotive-A applications per the Cypress/Infineon ordering matrix.
CY62256NLL-55ZXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- MOBL™
- Package/Case:
- 28-TSSOP (0.465", 11.80mm Width)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 256Kbit
- Memory Organization:
- 32K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 28-TSOP I
CY62256NLL-55ZXI FAQ
1.How can I place an order for CY62256NLL-55ZXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62256NLL-55ZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62256NLL-55ZXI reliable?
The price and inventory of CY62256NLL-55ZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62256NLL-55ZXI is usually 5 days.
3.What payment methods are accepted for CY62256NLL-55ZXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62256NLL-55ZXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62256NLL-55ZXI?
CY62256NLL-55ZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62256NLL-55ZXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62256NLL-55ZXI?
For technical support, including CY62256NLL-55ZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62256NLL-55ZXI requirements.
6.How does Aetrix verify that CY62256NLL-55ZXI is sourced from the original manufacturer or authorized distributors?
All CY62256NLL-55ZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62256NLL-55ZXI meets industry standards.
7.What is the process for return or replacement of CY62256NLL-55ZXI?
All CY62256NLL-55ZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY62256NLL-55ZXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62256NLL-55ZXI part is unused and in its original packaging.
Return procedure for CY62256NLL-55ZXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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